641 research outputs found
Mobile application platform selection
Abstract. Native and web apps have their own advantages and disadvantages in the field of mobile app industry. This fact has forced industry to make reforms and develop new tools and technologies to mitigate the disadvantages by both platform types. Different cross-platform development approaches have lowered the costs of developing apps to multiple different platforms and progressive web apps (PWA) have improved efficiency and user experience for web apps. This thesis strives to clarify the selection, which platform or approach the company should choose for their upcoming app. This is done by finding the properties and requirements found important by shareholders and finding out how capable platform/approach is meeting with the properties
Near-thermal limit gating in heavily-doped III-V semiconductor nanowires using polymer electrolytes
Doping is a common route to reducing nanowire transistor on-resistance but
has limits. High doping level gives significant loss in gate performance and
ultimately complete gate failure. We show that electrolyte gating remains
effective even when the Be doping in our GaAs nanowires is so high that
traditional metal-oxide gates fail. In this regime we obtain a combination of
sub-threshold swing and contact resistance that surpasses the best existing
p-type nanowire MOSFETs. Our sub-threshold swing of 75 mV/dec is within 25% of
the room-temperature thermal limit and comparable with n-InP and n-GaAs
nanowire MOSFETs. Our results open a new path to extending the performance and
application of nanowire transistors, and motivate further work on improved
solid electrolytes for nanoscale device applications.Comment: 6 pages, 2 figures, supplementary available at journa
Coupling of shells in a carbon nanotube quantum dot
We systematically study the coupling of longitudinal modes (shells) in a
carbon nanotube quantum dot. Inelastic cotunneling spectroscopy is used to
probe the excitation spectrum in parallel, perpendicular and rotating magnetic
fields. The data is compared to a theoretical model including coupling between
shells, induced by atomically sharp disorder in the nanotube. The calculated
excitation spectra show good correspondence with experimental data.Comment: 8 pages, 4 figure
Effective g-factor in Majorana Wires
We use the effective g-factor of subgap states, g*, in hybrid InAs nanowires
with an epitaxial Al shell to investigate how the superconducting density of
states is distributed between the semiconductor core and the metallic shell. We
find a step-like reduction of g* and improved hard gap with reduced carrier
density in the nanowire, controlled by gate voltage. These observations are
relevant for Majorana devices, which require tunable carrier density and g*
exceeding the g-factor of the proximitizing superconductor. Additionally, we
observe the closing and reopening of a gap in the subgap spectrum coincident
with the appearance of a zero-bias conductance peak
Finite bias Cooper pair splitting
In a device with a superconductor coupled to two parallel quantum dots (QDs)
the electrical tunability of the QD levels can be used to exploit non-classical
current correlations due to the splitting of Cooper pairs. We experimentally
investigate the effect of a finite potential difference across one quantum dot
on the conductance through the other completely grounded QD in a Cooper pair
splitter fabricated on an InAs nanowire. We demonstrate that the electrical
transport through the device can be tuned by electrical means to be dominated
either by Cooper pair splitting (CPS), or by elastic co-tunneling (EC). The
basic experimental findings can be understood by considering the energy
dependent density of states in a QD. The reported experiments add
bias-dependent spectroscopy to the investigative tools necessary to develop
CPS-based sources of entangled electrons in solid-state devices.Comment: 4 pages, 4 figure
Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates
We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot
device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The
wire segment can be electrically tuned to a single dot or to a double dot
regime using the FSGs and a backgate. In both regimes we find a strong MR and a
sharp MR switching of up to 25\% at the field at which the magnetizations of
the FSGs are inverted by the external field. The sign and amplitude of the MR
and the MR switching can both be tuned electrically by the FSGs. In a double
dot regime close to pinch-off we find {\it two} sharp transitions in the
conductance, reminiscent of tunneling MR (TMR) between two ferromagnetic
contacts, with one transition near zero and one at the FSG switching fields.
These surprisingly rich characteristics we explain in several simple resonant
tunneling models. For example, the TMR-like MR can be understood as a
stray-field controlled transition between singlet and a triplet double dot
states. Such local magnetic fields are the key elements in various proposals to
engineer novel states of matter and may be used for testing electron spin-based
Bell inequalities.Comment: 7 pages, 6 figure
Towards low-dimensional hole systems in Be-doped GaAs nanowires
GaAs was central to the development of quantum devices but is rarely used for
nanowire-based quantum devices with InAs, InSb and SiGe instead taking the
leading role. p-type GaAs nanowires offer a path to studying strongly-confined
0D and 1D hole systems with strong spin-orbit effects, motivating our
development of nanowire transistors featuring Be-doped p-type GaAs nanowires,
AuBe alloy contacts and patterned local gate electrodes towards making
nanowire-based quantum hole devices. We report on nanowire transistors with
traditional substrate back-gates and EBL-defined metal/oxide top-gates produced
using GaAs nanowires with three different Be-doping densities and various AuBe
contact processing recipes. We show that contact annealing only brings small
improvements for the moderately-doped devices under conditions of lower anneal
temperature and short anneal time. We only obtain good transistor performance
for moderate doping, with conduction freezing out at low temperature for
lowly-doped nanowires and inability to reach a clear off-state under gating for
the highly-doped nanowires. Our best devices give on-state conductivity 95 nS,
off-state conductivity 2 pS, on-off ratio ~, and sub-threshold slope 50
mV/dec at T = 4 K. Lastly, we made a device featuring a moderately-doped
nanowire with annealed contacts and multiple top-gates. Top-gate sweeps show a
plateau in the sub-threshold region that is reproducible in separate cool-downs
and indicative of possible conductance quantization highlighting the potential
for future quantum device studies in this material system
Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts
Advanced synthesis of semiconductor nanowires (NWs) enables their application
in diverse fields, notably in chemical and electrical sensing, photovoltaics,
or quantum electronic devices. In particular, Indium Arsenide (InAs) NWs are an
ideal platform for quantum devices, e.g. they may host topological Majorana
states. While the synthesis has been continously perfected, only few techniques
were developed to tailor individual NWs after growth. Here we present three wet
chemical etch methods for the post-growth morphological engineering of InAs NWs
on the sub-100 nm scale. The first two methods allow the formation of
self-aligned electrical contacts to etched NWs, while the third method results
in conical shaped NW profiles ideal for creating smooth electrical potential
gradients and shallow barriers. Low temperature experiments show that NWs with
etched segments have stable transport characteristics and can serve as building
blocks of quantum electronic devices. As an example we report the formation of
a single electrically stable quantum dot between two etched NW segments.Comment: 9 pages, 5 figure
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