Entrapment: an important mechanism to explain the shortwave 3D radiative effect of clouds

Several mechanisms have previously been proposed to explain differences between the shortwave reflectance of realistic cloud scenes computed using the 1D independent column approximation (ICA) and 3D solutions of the radiative transfer equation. When the sun is low in the sky, interception of sunlight by cloud sides tends to increase reflectance relative to ICA estimates that neglect this effect. When the sun is high, 3D radiative transfer tends to make clouds less reflective, which we argue is explained by the mechanism of “entrapment” whereby horizontal transport of radiation beneath a cloud layer increases the chances, relative to the ICA, of light being absorbed by cloud or the surface. It is especially important for multilayered cloud scenes. We describe modifications to the previously described Speedy Algorithm for Radiative Transfer through Cloud Sides (SPARTACUS) to represent different entrapment assumptions, and test their impact on 65 contrasting scenes from a cloud-resolving model. When entrapment is represented explicitly via a calculation of the mean horizontal distance traveled by reflected light, SPARTACUS predicts a mean “3D radiative effect” (the difference in top-of-atmosphere irradiances between 3D and ICA calculations) of 8.1 W m−2 for overhead sun. This is within 2% of broadband Monte Carlo calculations on the same scenes. The importance of entrapment is highlighted by the finding that the extreme assumptions in SPARTACUS of “zero entrapment” and “maximum entrapment” lead to corresponding mean 3D radiative effects of 1.7 and 19.6 W m−2, respectively

Spin polarization and magneto-luminescence of confined electron-hole systems

A BCS-like variational wave-function, which is exact in the infinite field limit, is used to study the interplay among Zeeman energies, lateral confinement and particle correlations induced by the Coulomb interactions in strongly pumped neutral quantum dots. Band mixing effects are partially incorporated by means of field-dependent masses and g-factors. The spin polarization and the magneto-luminescence are computed as functions of the number of electron-hole pairs present in the dot and the applied magnetic field.Comment: To appear in Phys. Rev.

Distributed feedback InGaN/GaN laser diodes

We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include a simpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length

Recent progress in distributed feedback InGaN/GaN laser diodes

Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow linewidth blue laser source can be used to target the atomic cooling transition. We report on the continuous wave, room temperature operation of a distributed feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices based on the (Al,In) GaN material system is described. A single peak emission at 408.6 nm with an optical power of 20 mW at 225 mA and a side mode suppression ratio (SMSR) of 35 dB was achieved. Additionally, we demonstrate the use of a GaN DFB-LD as a transmitter in visible optical communications system. We also present results from a DFB-LD optimized for laser cooling of Sr+

GaN-based distributed feedback laser diodes for optical communications

Over the past 20 years, research into Gallium Nitride (GaN) has evolved from LED lighting to Laser Diodes (LDs), with applications ranging from quantum to medical and into communications. Previously, off-the-shelf GaN LDs have been reported with a view on free space and underwater communications. However, there are applications where the ability to select a single emitted wavelength is highly desirable, namely in atomic clocks or in filtered free-space communications systems. To accomplish this, Distributed Feedback (DFB) geometries are utilised. Due to the complexity of overgrowth steps for buried gratings in III-Nitride material systems, GaN DFBs have a grating etched into the sidewall to ensure single mode operation, with wavelengths ranging from 405nm to 435nm achieved. The main motivation in developing these devices is for the cooling of strontium ions (Sr+) in atomic clock applications, but their feasibility for optical communications have also been investigated. Data transmission rates exceeding 1 Gbit/s have been observed in unfiltered systems, and work is currently ongoing to examine their viability for filtered communications. Ultimately, transmission through Wavelength Division Multiplexing (WDM) or Orthogonal Frequency Division Multiplexing (OFDM) is desired, to ensure that data is communicated more coherently and efficiently. We present results on the characterisation of GaN DFBs, and demonstrate their capability for use in filtered optical communications systems

Distributed Feedback Lasers for Quantum Cooling Applications

There is an ever-growing need for compact sources which can be used for the cooling process in high accuracy atomic clocks. Current systems make use of large, expensive lasers which are power-hungry and often require frequency doubling in order to hit the required wavelengths. Distributed feedback (DFB) lasers have been fabricated at a number of key wavelengths which would allow chip scale atomic devices with very high accuracy to become a reality. Two key atomic transitions analysed here are 88 Sr + and 87 Rb which require cooling at 422 nm and 780.24 nm, respectively. The vital parameter of the DFB lasers for this application is the linewidth, as very narrow linewidths are required in order for the atomic cooling process to occur. The lasers realised here produce the required power levels, with high side-mode suppression ratios and show good single mode tuning which is important for hitting precise wavelengths. This work will present the latest techniques and results using the DFB lasers at both wavelengths

InGaN/GaN Laser Diodes and their Applications

Gallium nitride (GaN) laser diodes are becoming popular sources not only for lighting but for applications ranging from communications to quantum. This paper presents the use of a commercial, off-the-shelf laser diode, with an emission wavelength of 450 nm, for visible light communication, both in free space and for underwater scenarios. Data rates up to 15 Gbit/s have been achieved by making use of orthogonal frequency division multiplexing (OFDM). In addition, distributed feedback (DFB) lasers have been realised emitting at a single wavelength which lend themselves towards applications where high spectral purity is crucial such as atomic clocks or filtered free space transmission systems. These devices have the grating structure etched into the sidewall of the ridge and work is ongoing to measure the linewidth of these lasers with the intended application of cooling Sr+ ions

Applications of Single Frequency Blue Lasers

Gallium nitride (GaN) sources are becoming a regular part of today's world and are now key devices for lighting infrastructures, communications systems and quantum applications, amongst others. In particular, many applications have seen the shift from LEDs to laser diodes to make use of higher powers, higher bandwidths and increased transmission distances. Laser communication systems are well established, however there are applications where the ability to select a single emitted wavelength is highly desirable, such as quantum atomic clocks or in filtered communication systems. Distributed feedback (DFB) lasers have been realised emitting at a single wavelength where the grating structure is etched into the sidewall of the ridge. The main motivation in developing these lasers is for the cooling of ions in atomic clocks; however their feasibility for optical communications is also explored. Narrow linewidth lasers are desirable and this paper will explore how this is achieved. Data rates in excess of 1 Gbit/s have also been achieved in a directly modulated, unfiltered system. These devices lend themselves towards wavelength division multiplexing and filtered optical communications systems and this will be analysed further in the work presented here

Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings

We report on the continuous-wave, room-temperature operation of a distributed-feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication, and characterization of DFB devices, which are based on the (Al,In)GaN material system, is described. The uncoated devices exhibited single-wavelength emission at 408.6 nm with an optical power of 20 mW at 225 mA. A side-mode suppression ratio (SMSR) of 35 dB was achieved, with a resolution-limited full-width at half maximum of 6.5 pm

Dietary Silicon Deficiency Does Not Exacerbate Diet-Induced Fatty Lesions in Female ApoE Knockout Mice.

BACKGROUND: Dietary silicon has been positively linked with vascular health and protection against atherosclerotic plaque formation, but the mechanism of action is unclear. OBJECTIVES: We investigated the effect of dietary silicon on 1) serum and aorta silicon concentrations, 2) the development of aortic lesions and serum lipid concentrations, and 3) the structural and biomechanic properties of the aorta. METHODS: Two studies, of the same design, were conducted to address the above objectives. Female mice, lacking the apolipoprotein E (apoE) gene, and therefore susceptible to atherosclerosis, were separated into 3 groups of 10-15 mice, each exposed to a high-fat diet (21% wt milk fat and 1.5% wt cholesterol) but with differing concentrations of dietary silicon, namely: silicon-deprived (-Si; <3-μg silicon/g feed), silicon-replete in feed (+Si-feed; 100-μg silicon/g feed), and silicon-replete in drinking water (+Si-water; 115-μg silicon/mL) for 15-19 wk. Silicon supplementation was in the form of sodium metasilicate (feed) or monomethylsilanetriol (drinking water). RESULTS: The serum silicon concentration in the -Si group was significantly lower than in the +Si-feed (by up to 78%; P < 0.003) and the +Si-water (by up to 84%; P < 0.006) groups. The aorta silicon concentration was also lower in the -Si group than in the +Si-feed group (by 65%; P = 0.025), but not compared with the +Si-water group. There were no differences in serum and aorta silicon concentrations between the silicon-replete groups. Body weights, tissue wet weights at necropsy, and structural, biomechanic, and morphologic properties of the aorta were not affected by dietary silicon; nor were the development of fatty lesions and serum lipid concentrations. CONCLUSIONS: These findings suggest that dietary silicon has no effect on atherosclerosis development and vascular health in the apoE mouse model of diet-induced atherosclerosis, contrary to the reported findings in the cholesterol-fed rabbit model