Prediction of electronic couplings for molecular charge transfer using optimally tuned range-separated hybrid functionals

Electronic coupling matrix elements are important to the theoretical description of electron transfer processes. However, they are notoriously difficult to obtain accurately from time-dependent density functional theory (TDDFT). Here, we use the HAB11 benchmark dataset of coupling matrix elements to assess whether TDDFT using optimally tuned range-separated hybrid functionals, already known to be successful for the description of charge transfer excitation energies, also allows for an improved accuracy in the prediction of coupling matrix elements. We find that this approach outperforms all previous TDDFT calculations, based on semi-local, hybrid or non-tuned range-separated hybrid functionals, with a remaining average deviation as low as ∼12%. We discuss potential sources for the remaining error

Jahn-Teller Distortion and Ferromagnetism in the Dilute Magnetic Semiconductors GaN:Mn

Using first-principles total-energy methods, we investigate Jahn-Teller distortions in III-V dilute magnetic semiconductors, GaAs:Mn and GaN:Mn in the cubic zinc blende structure. The results for an isolated Mn impurity on a Ga site show that there is no appreciable effect in GaAs, whereas, in GaN there is a Jahn-Teller effect in which the symmetry around the impurity changes from T$_{d}$ to D$_{2d}$ or to C$_{2v}$. The large effect in GaN occurs because of the localized d$^4$ character, which is further enhanced by the distortion. The lower symmetry should be detectable experimentally in cubic GaN with low Mn concentration, and should be affected by charge compensation (reductions of holes and conversion of Mn ions to d$^5$ with no Jahn-Teller effect). Jahn-Teller effect is greatly reduced because the symmetry at each Mn site is lowered due to the Mn-Mn interaction. The tendency toward ferromagnetism is found to be stronger in GaN:Mn than in GaAs:Mn and to be only slightly reduced by charge compensation.Comment: 6 pages, 3 figure

Role of long-range exact exchange in polaron charge transition levels: The case of MgO

Predicting the degree of localization and calculating the trapping energies of polarons in insulators by density functional theory (DFT) is challenging. Hybrid functionals are often reparametrized to obtain accurate results and the a priori selection of these parameters is still an open question. Here we test the accuracy of several range-separated hybrid functionals, all reparametrized to produce an accurate band gap, by calculating the charge transition levels (CTLs) of experimentally well-studied hole polaron defect centers in MgO. We show that the functional with screened long-range exact exchange is moderately but consistently more accurate than functionals which do not include long-range exact exchange. We provide evidence that the source of the improved accuracy is the eigenvalue associated with the valence band maximum of the bulk material. We discuss the extent to which this accuracy relates to Koopmans' compliance of the defect energy level

Voltage tuning of vibrational mode energies in single-molecule junctions

Vibrational modes of molecules are fundamental properties determined by intramolecular bonding, atomic masses, and molecular geometry, and often serve as important channels for dissipation in nanoscale processes. Although single-molecule junctions have been employed to manipulate electronic structure and related functional properties of molecules, electrical control of vibrational mode energies has remained elusive. Here we use simultaneous transport and surface-enhanced Raman spectroscopy measurements to demonstrate large, reversible, voltage-driven shifts of vibrational mode energies of C60 molecules in gold junctions. C60 mode energies are found to vary approximately quadratically with bias, but in a manner inconsistent with a simple vibrational Stark effect. Our theoretical model suggests instead that the mode shifts are a signature of bias-driven addition of electronic charge to the molecule. These results imply that voltage-controlled tuning of vibrational modes is a general phenomenon at metal-molecule interfaces and is a means of achieving significant shifts in vibrational energies relative to a pure Stark effect.Comment: 23 pages, 4 figures + 12 pages, 7 figures supporting materia

Photoreflectance and surface photovoltage spectroscopy of beryllium-doped GaAs/AlAs multiple quantum wells

We present an optical study of beryllium delta-doped GaAs/AlAs multiple quantum well (QW) structures designed for sensing terahertz (THz) radiation. Photoreflectance (PR), surface photovoltage (SPV), and wavelength-modulated differential surface photovoltage (DSPV) spectra were measured in the structures with QW widths ranging from 3 to 20 nm and doping densities from 2×10(10) to 5×10(12) cm(–2) at room temperature. The PR spectra displayed Franz-Keldysh oscillations which enabled an estimation of the electric-field strength of ~20 kV/cm at the sample surface. By analyzing the SPV spectra we have determined that a buried interface rather than the sample surface mainly governs the SPV effect. The DSPV spectra revealed sharp features associated with excitonic interband transitions which energies were found to be in a good agreement with those calculated including the nonparabolicity of the energy bands. The dependence of the exciton linewidth broadening on the well width and the quantum index has shown that an average half monolayer well width fluctuations is mostly predominant broadening mechanism for QWs thinner than 10 nm. The line broadening in lightly doped QWs, thicker than 10 nm, was found to arise from thermal broadening with the contribution from Stark broadening due to random electric fields of the ionized impurities in the structures. We finally consider the possible influence of strong internal electric fields, QW imperfections, and doping level on the operation of THz sensors fabricated using the studied structures. © 2005 American Institute of Physic

Hybridization and Bond-Orbital Components in Site-Specific X-Ray Photoelectron Spectra of Rutile TiO\u3csub\u3e2\u3c/sub\u3e

We have determined the Ti and O components of the rutile TiO2 valence band using the method of sitespecific x-ray photoelectron spectroscopy. Comparisons with calculations based on pseudopotentials within the local density approximation reveal the hybridization of the Ti 3d, 4s, and 4p states, and the O 2s and 2p states on each site. These chemical effects are observed due to the large differences between the angular-momentum dependent matrix elements of the photoelectron process

Electronic structure and magnetism of Mn doped GaN

Mn doped semiconductors are extremely interesting systems due to their novel magnetic properties suitable for the spintronics applications. It has been shown recently by both theory and experiment that Mn doped GaN systems have a very high Curie temperature compared to that of Mn doped GaAs systems. To understand the electronic and magnetic properties, we have studied Mn doped GaN system in detail by a first principles plane wave method. We show here the effect of varying Mn concentration on the electronic and magnetic properties. For dilute Mn concentration, $d$ states of Mn form an impurity band completely separated from the valence band states of the host GaN. This is in contrast to the Mn doped GaAs system where Mn $d$ states in the gap lie very close to the valence band edge and hybridizes strongly with the delocalized valence band states. To study the effects of electron correlation, LSDA+U calculations have been performed. Calculated exchange interaction in (Mn,Ga)N is short ranged in contrary to that in (Mn,Ga)As where the strength of the ferromagnetic coupling between Mn spins is not decreased substantially for large Mn-Mn separation. Also, the exchange interactions are anisotropic in different crystallographic directions due to the presence or absence of connectivity between Mn atoms through As bonds.Comment: 6 figures, submitted to Phys. Rev.

On-site Coulomb interaction and the magnetism of (GaMn)N and (GaMn)As

We use the local density approximation (LDA) and LDA+U schemes to study the magnetism of (GaMn)As and (GaMn)N for a number of Mn concentrations and varying number of holes. We show that for both systems and both calculational schemes the presence of holes is crucial for establishing ferromagnetism. For both systems, the introduction of $U$ increases delocalization of the holes and, simultaneously, decreases the p-d interaction. Since these two trends exert opposite influences on the Mn-Mn exchange interaction the character of the variation of the Curie temperature (T$_C$) cannot be predicted without direct calculation. We show that the variation of T$_C$ is different for two systems. For low Mn concentrations we obtain the tendency to increasing T$_C$ in the case of (GaMn)N whereas an opposite tendency to decreasing T$_C$ is obtained for (GaMn)As. We reveal the origin of this difference by inspecting the properties of the densities of states and holes for both systems. The main body of calculations is performed within a supercell approach. The Curie temperatures calculated within the coherent potential approximation to atomic disorder are reported for comparison. Both approaches give similar qualitative behavior. The results of calculations are related to the experimental data.Comment: to appear in Physical Review

Structure and properties of small sodium clusters

We have investigated structure and properties of small metal clusters using all-electron ab initio theoretical methods based on the Hartree-Fock approximation and density functional theory, perturbation theory and compared results of our calculations with the available experimental data and the results of other theoretical works. We have systematically calculated the optimized geometries of neutral and singly charged sodium clusters having up to 20 atoms, their multipole moments (dipole and quadrupole), static polarizabilities, binding energies per atom, ionization potentials and frequencies of normal vibration modes. Our calculations demonstrate the great role of many-electron correlations in the formation of electronic and ionic structure of small metal clusters and form a good basis for further detailed study of their dynamic properties, as well as structure and properties of other atomic cluster systems.Comment: 47 pages, 16 figure