325 research outputs found
Confinement-enhanced electron transport across a metal-semiconductor interface
We present a combined scanning tunneling microscopy and ballistic electron emission microscopy study of electron transport across an epitaxial Pb/Si(111) interface. Experiments with a self-assembled Pb nanoscale wedge reveal the phenomenon of confinement-enhanced interfacial transport: a proportional increase of the electron injection rate into the semiconductor with the frequency of electron oscillations in the Pb quantum well
Field Ionization of Cold Atoms near the Wall of a Single Carbon Nanotube
We observe the capture and field ionization of individual atoms near the side
wall of a single suspended nanotube. Extremely large cross sections for
ionization from an atomic beam are observed at modest voltages due to the
nanotube's small radius and extended length. The effects of the field strength
on both the atomic capture and the ionization process are clearly distinguished
in the data, as are prompt and delayed ionizations related to the locations at
which they occur. Efficient and sensitive neutral atom detectors can be based
on the nanotube capture and wall ionization processes.Comment: Article (8 pages) and Supplementary Information (4 pages). Associated
figure appeared on cover of the April 2, 2010 issue of PRL
Ion Beam Nanosculpting and Materials Science with Single Nanopores
Work is reported in these areas: Nanopore studies; Ion sculpting of metals; High energy ion sculpting; Metrology of nanopores with single wall carbon nanotube probes; Capturing molecules in a nanopore; Strand separation in a nanopore; and DNA molecules and configurations in solid-state nanopores
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Tunable Nanometer Electrode Gaps by MeV Ion Irradiation
We report the use of MeV ion-irradiation-induced plastic deformation of amorphous materials to fabricate electrodes with nanometer-sized gaps. Plastic deformation of the amorphous metal is induced by ion irradiation, allowing the complete closing of a sub-micrometer gap. We measure the evolving gap size in situ by monitoring the field emission current-voltage (I-V) characteristics between electrodes. The I-V behavior is consistent with Fowler-Nordheim tunneling. We show that using feedback control on this signal permits gap size fabrication with atomic-scale precision. We expect this approach to nanogap fabrication will enable the practical realization of single molecule controlled devices and sensors.Engineering and Applied SciencesPhysic
Качественный анализ финансового состояния предприятия – основа его стабильного развития
В даній статті обґрунтовується важливість оцінки фінансового стану підприємства для його стабільного розвитку в умовах ринкової економіки. Розглядається аналіз фінансової діяльності підприємства його методи та прийоми, що допомагають визначити резерви подальшого підвищення ринкової вартості підприємства та забезпечення його ефективного функціонування.In this article the importance of assessing the financial condition of the company for its sustainable development in a market economy. An analysis of the financial activity of its methods and techniques that help determine the reserves further increase the market value of the enterprise and ensure its effective functioning.В данной статье обосновывается важность оценки финансового состояния предприятия для его стабильного развития в условиях рыночной экономики. Рассматривается анализ финансовой деятельности предприятия и его методы и приемы, помогающие определить резервы дальнейшего повышения рыночной стоимости предприятия и обеспечения его эффективного функционирования
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Ion-sculpting of Nanopores in Amorphous Metals, Semiconductors and Insulators
We report the closure of nanopores to single-digit nanometer dimensions by ion sculpting in a range of amorphous materials including insulators (SiO and SiN), semiconductors (a-Si), and metallic glasses (PdSi) — the building blocks of a single-digit nanometer electronic device. Ion irradiation of nanopores in crystalline materials (Pt and Ag) does not cause nanopore closure. Ion irradiation of c-Si pores below 100 °C and above 600 °C, straddling the amorphous-crystalline dynamic transition temperature, yields closure at the lower temperature but no mass transport at the higher temperature. Ion beam nanosculpting appears to be restricted to materials that either are or become amorphous during ion irradiation.Engineering and Applied SciencesPhysic
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