163 research outputs found
Imaging Localized States in Graphene Nanostructures
Probing techniques with spatial resolution have the potential to lead to a
better understanding of the microscopic physical processes and to novel routes
for manipulating nanostructures. We present scanning-gate images of a graphene
quantum dot which is coupled to source and drain via two constrictions. We
image and locate conductance resonances of the quantum dot in the
Coulomb-blockade regime as well as resonances of localized states in the
constrictions in real space.Comment: 18 pages, 7 figure
High-frequency gate manipulation of a bilayer graphene quantum dot
We report transport data obtained for a double-gated bilayer graphene quantum
dot. In Coulomb blockade measurements, the gate dielectric Cytop(TM) is found
to provide remarkable electronic stability even at cryogenic temperatures.
Moreover, we demonstrate gate manipulation with square shaped voltage pulses at
frequencies up to 100 MHz and show that the signal amplitude is not affected by
the presence of the capacitively coupled back gate
Spin States in Graphene Quantum Dots
We investigate ground and excited state transport through small (d = 70 nm)
graphene quantum dots. The successive spin filling of orbital states is
detected by measuring the ground state energy as a function of a magnetic
field. For a magnetic field in-plane of the quantum dot the Zemann splitting of
spin states is measured. The results are compatible with a g-factor of 2 and we
detect a spin-filling sequence for a series of states which is reasonable given
the strength of exchange interaction effects expected for graphene
Raman spectroscopy on etched graphene nanoribbons
We investigate etched single-layer graphene nanoribbons with different widths
ranging from 30 to 130 nm by confocal Raman spectroscopy. We show that the
D-line intensity only depends on the edge-region of the nanoribbon and that
consequently the fabrication process does not introduce bulk defects. In
contrast, the G- and the 2D-lines scale linearly with the irradiated area and
therefore with the width of the ribbons. We further give indications that the
D- to G-line ratio can be used to gain information about the crystallographic
orientation of the underlying graphene. Finally, we perform polarization angle
dependent measurements to analyze the nanoribbon edge-regions
Transition to Landau Levels in Graphene Quantum Dots
We investigate the electronic eigenstates of graphene quantum dots of
realistic size (i.e., up to 80 nm diameter) in the presence of a perpendicular
magnetic field B. Numerical tight-binding calculations and Coulomb-blockade
measurements performed near the Dirac point exhibit the transition from the
linear density of states at B=0 to the Landau level regime at high fields.
Details of this transition sensitively depend on the underlying graphene
lattice structure, bulk defects, and localization effects at the edges. Key to
the understanding of the parametric evolution of the levels is the strength of
the chiral-symmetry breaking K-K' scattering. We show that the parametric
variation of the level variance provides a quantitative measure for this
scattering mechanism. We perform measurements of the parametric motion of
Coulomb blockade peaks as a function of magnetic field and find good agreement.
We thereby demonstrate that the magnetic-field dependence of graphene energy
levels may serve as a sensitive indicator for the properties of graphene
quantum dots and, in further consequence, for the validity of the
Dirac-picture.Comment: 10 pages, 11 figures, higher quality images available on reques
Coulomb oscillations in three-layer graphene nanostructures
We present transport measurements on a tunable three-layer graphene single
electron transistor (SET). The device consists of an etched three-layer
graphene flake with two narrow constrictions separating the island from source
and drain contacts. Three lateral graphene gates are used to electrostatically
tune the device. An individual three-layer graphene constriction has been
investigated separately showing a transport gap near the charge neutrality
point. The graphene tunneling barriers show a strongly nonmonotonic coupling as
function of gate voltage indicating the presence of localized states in the
constrictions. We show Coulomb oscillations and Coulomb diamond measurements
proving the functionality of the graphene SET. A charging energy of meV is extracted.Comment: 10 pages, 6 figure
Local gating of a graphene Hall bar by graphene side gates
We have investigated the magnetotransport properties of a single-layer
graphene Hall bar with additional graphene side gates. The side gating in the
absence of a magnetic field can be modeled by considering two parallel
conducting channels within the Hall bar. This results in an average penetration
depth of the side gate created field of approx. 90 nm. The side gates are also
effective in the quantum Hall regime, and allow to modify the longitudinal and
Hall resistances
Skyrmion automotion in confined counter-sensor device geometries
Magnetic skyrmions are topologically stabilized quasi-particles and are promising candidates for energy-efficient applications, such as storage but also logic and sensing. Here we present a new concept for a multi-turn sensor-counter device based on skyrmions, where the number of sensed rotations is encoded in the number of nucleated skyrmions. The skyrmion-boundary force in the confined geometry of the device in combination with the topology-dependent dynamics leads to the effect of automotion for certain geometries. For our case, we describe and investigate this effect with micromagnetic simulations and the coarse-grained Thiele equation in a triangular geometry with an attached reservoir as part of the sensor-counter device
Transport through a strongly coupled graphene quantum dot in perpendicular magnetic field
We present transport measurements on a strongly coupled graphene quantum dot
in a perpendicular magnetic field. The device consists of an etched
single-layer graphene flake with two narrow constrictions separating a 140 nm
diameter island from source and drain graphene contacts. Lateral graphene gates
are used to electrostatically tune the device. Measurements of Coulomb
resonances, including constriction resonances and Coulomb diamonds prove the
functionality of the graphene quantum dot with a charging energy of around 4.5
meV. We show the evolution of Coulomb resonances as a function of perpendicular
magnetic field, which provides indications of the formation of the graphene
specific 0th Landau level. Finally, we demonstrate that the complex pattern
superimposing the quantum dot energy spectra is due to the formation of
additional localized states with increasing magnetic field.Comment: 6 pages, 4 figure
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