The Higher Orders of the Theory of Strong Perturbations in Quantum Mechanics and the Secularity Problem

We solve the higher order equations of the theory of the strong perturbations in quantum mechanics given in M. Frasca, Phys. Rev. A 45, 43 (1992), by assuming that, at the leading order, the wave function goes adiabatically. This is accomplished by deriving the unitary operator of adiabatic evolution for the leading order. In this way it is possible to show that at least one of the causes of the problem of phase-mixing, whose effect is the polynomial increase in time of the perturbation terms normally called secularities, arises from the shifts of the perturbation energy levels due to the unperturbed part of the hamiltonian. An example is given for a two-level system that, anyway, shows a secularity at second order also in the standard theory of small perturbations. The theory is applied to the quantum analog of a classical problem that can become chaotic, a particle under the effect of two waves of different amplitudes, frequencies and wave numbers.Comment: 13 pages, Late

Duality in Perturbation Theory and the Quantum Adiabatic Approximation

Duality is considered for the perturbation theory by deriving, given a series solution in a small parameter, its dual series with the development parameter being the inverse of the other. A dual symmetry in perturbation theory is identified. It is then shown that the dual to the Dyson series in quantum mechanics is given by a recent devised series having the adiabatic approximation as leading order. A simple application of this result is given by rederiving a theorem for strongly perturbed quantum systems.Comment: 9 pages, revtex. Improved english and presentation. Final version accepted for publication by Physical Review

Accretion, disks, and magnetic activity in the TW Hya association

We present new photometric and spectroscopic data for the M-type members of the TW Hya association with the aim of a comprehensive study of accretion, disks and magnetic activity at the critical age of ~10 Myr where circumstellar matter disappears.Comment: 4 pages, to appear in Proceedings IAU Symposium No. 314, Young Stars & Planets Near the Sun, 201

Neutron and gamma irradiation effects on power semiconductor switches

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation

Theory of dressed states in quantum optics

The dual Dyson series [M.Frasca, Phys. Rev. A {\bf 58}, 3439 (1998)], is used to develop a general perturbative method for the study of atom-field interaction in quantum optics. In fact, both Dyson series and its dual, through renormalization group methods to remove secular terms from the perturbation series, give the opportunity of a full study of the solution of the Schr\"{o}dinger equation in different ranges of the parameters of the given hamiltonian. In view of recent experiments with strong laser fields, this approach seems well-suited to give a clarification and an improvement of the applications of the dressed states as currently done through the eigenstates of the atom-field interaction, showing that these are just the leading order of the dual Dyson series when the Hamiltonian is expressed in the interaction picture. In order to exploit the method at the best, a study is accomplished of the well-known Jaynes-Cummings model in the rotating wave approximation, whose exact solution is known, comparing the perturbative solutions obtained by the Dyson series and its dual with the same approximations obtained by Taylor expanding the exact solution. Finally, a full perturbative study of high-order harmonic generation is given obtaining, through analytical expressions, a clear account of the power spectrum using a two-level model, even if the method can be successfully applied to a more general model that can account for ionization too. The analysis shows that to account for the power spectrum it is needed to go to first order in the perturbative analysis. The spectrum obtained gives a way to measure experimentally the shift of the energy levels of the atom interacting with the laser field by looking at the shifting of hyper-Raman lines.Comment: Revtex, 17 page

Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed

Neutron, gamma ray, and temperature effects on the electrical characteristics of thyristors

Experimental data showing the effects of neutrons, gamma rays, and temperature on the electrical and switching characteristics of phase-control and inverter-type SCR's are presented. The special test fixture built for mounting, heating, and instrumenting the test devices is described. Four SCR's were neutron irradiated at 300 K and four at 365 K for fluences up to 3.2 x 10 exp 13 n/sq. cm, and eight were gamma irradiated at 300 K only for gamma doses up to 5.1 Mrads. The electrical measurements were made during irradiation and the switching measurements were made only before and after irradiation. Radiation induced crystal defects, resulting primarily from fast neutrons, caused the reduction of minority carrier lifetime through the generation of R-G centers. The reduction in lifetime caused increases in the on-state voltage drop and in the reverse and forward leakage currents, and decreases in the turn-off time