17 research outputs found
Low frequency noise investigation of Al-free pseudomorphic InP/In 0.67 Ga 0.33 As/InP HFET's
No full textLow frequency mnoise behaviour of Al-free HFETs biased in the ohmic region : a comparison between measurement and model
No full textLow frequency noise investigation of Al-free pseudomorphic InP/In 0.67 Ga 0.33 As/InP HFET's
No full textInfluence of thermal stress on I-V characteristics and low frequency noise of AlGaInP UHB-LEDs
No full textHot-electron energy relaxation, noise and lattice strain in InGaAs quantum well channels
No full textHooge parameter of InP-based 2DEG structures and its dependence on channel design and temperature
No full textHooge parameter of InP-based 2DEG structures and its dependence on channel design and temperature
No full textIC compatible MEMS technology
Get PDFThis paper deals with an Integrated
Circuits (ICs) compatible MEMS technology, which
is used to elaborate an ultra compact RF
communication module centered at 24GHz. This
technology uses conventional equipments and is in
adequation with millimeterwave applications. A
compatibility test protocol has consequently been
defined in order to check that each technological step
does not degrade the SiGe circuits’ performances.
Finally, the realized demonstrator present a total
surface of only 9mm²
