214 research outputs found
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Recent progress in the development of β-Ga2O3 scintillator crystals grown by the Czochralski method
A high-quality bulk single crystal of β-Ga2O3 has been grown by the Czochralski method and its basic scintillation characteristics (light yield, energy resolution, proportionality, and scintillation decay times) have been investigated. All the samples cut from the crystal show promising scintillation yields between 8400 and 8920 ph/MeV, which is a noticeable step forward compared to previous studies. The remaining parameters, i.e. the energy resolution slightly above 10% (at 662 keV) and the scintillation mean decay time just under 1 μs, are at the same level as we have formerly recognized for β-Ga2O3. The proportionality of yield seems not to deviate from standards determined by other commercial scintillators
Recent Progress in the Development of β-Ga2O3 Scintillator Crystals Grown by the Czochralski Method
A high-quality bulk single crystal of β-Ga2O3 has been grown by the Czochralski method and its basic scintillation characteristics (light yield, energy resolution, proportionality, and scintillation decay times) have been investigated. All the samples cut from the crystal show promising scintillation yields between 8400 and 8920 ph/MeV, which is a noticeable step forward compared to previous studies. The remaining parameters, i.e. the energy resolution slightly above 10% (at 662 keV) and the scintillation mean decay time just under 1 μs, are at the same level as we have formerly recognized for β-Ga2O3. The proportionality of yield seems not to deviate from standards determined by other commercial scintillators
Tailoring the Scintillation Properties of β-Ga2O3 by Doping with Ce and Codoping with Si
Measurements of pulse height spectra and scintillation time profiles performed on Czochralski-grown β-Ga2O3, β-Ga2O3:Ce, and β-Ga2O3:Ce,Si crystals are reported. The highest value of scintillation yield, 7040 ph/MeV, was achieved for pure β-Ga2O3 at a low free electron concentration, nevertheless Ce-doped crystals could also approach high values thereof. Si-codoping, however, decreases the scintillation yield. The presence of Ce, and the more of Ce and Si, in β-Ga2O3 significantly increases the contribution of the fastest components in scintillation time profiles, which makes β-Ga2O3 a very fast scintillator under γ-excitation
Fingerprints of carbon defects in vibrational spectra of gallium nitride (GaN) consider-ing the isotope effect
This work examines the carbon defects associated with recently reported and
novel peaks of infrared (IR) absorption and Raman scattering appearing in GaN
crystals at carbon () doping in the range of concentrations from
to . 14 unique vibrational modes of defects
are observed in GaN samples grown by hydride vapor phase epitaxy (HVPE) and
then compared with defect properties predicted from first-principles
calculations. The vibrational frequency shift in two enriched samples
related to the effect of the isotope mass indicates six distinct configurations
of the carbon-containing point defects. The effect of the isotope replacement
is well reproduced by the density functional theory (DFT) calculations.
Specific attention is paid to the most pronounced defects, namely tri-carbon
complexes() and carbon substituting for nitrogen . The position
of the transition level (+/0) in the bandgap found for defects by
DFT at 1.1 eV above the valence band maximum, suggest that
provides compensation of . defects are observed to be
prominent, yet have high formation energies in DFT calculations. Regarding
defects, it is shown that the host Ga and N atoms are involved in the
defect's delocalized vibrations and significantly affect the isotopic frequency
shift. Much more faint vibrational modes are found from di-atomic carbon-carbon
and carbon-hydrogen (C-H) complexes. Also, we note changes of vibrational mode
intensities of , , C-H, and defects in the IR
absorption spectra upon irradiation in the defect-related UV/visible absorption
range. Finally, it is demonstrated that the resonant enhancement of the Raman
process in the range of defect absorption above 2.5 eV enables the detection of
defects at carbon doping concentrations as low as
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Low temperature thermoluminescence of β-Ga2O3 scintillator
Low temperature thermoluminescence of β-Ga2O3, β-Ga2O3:Al and β-Ga2O3:Ce has been investigated. Glow curves have been analyzed quantitatively using a rate equations model in order to determine the traps parameters, such as activation energies, capture cross-sections and probabilities of recombination and retrapping
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Heading for brighter and faster β-Ga2O3 scintillator crystals
Czochralski-grown β-Ga2O3 and β-Ga2O3:Si crystals with the free electron concentrations between 2.5·1016 and 4.3·1018 cm−3 have been characterized by means of pulse height and scintillation time profile measurements in order to assess their basic scintillation properties. At room temperature, with increasing free electron concentration in the studied range, the scintillation yields decrease from 8920 to 1930 ph/MeV, while the mean scintillation decay times pare down from 989 to 61 ns. However, when the brightest β-Ga2O3 sample is cooled down below 100 K, its scintillation yield exceeds 20000 ph/MeV
Distinction between the Poole-Frenkel and tunneling models of electric field-stimulated carrier emission from deep levels in semiconductors
The enhancement of the emission rate of charge carriers from deep-level defects in electric field is routinely used to determine the charge state of the defects. However, only a limited number of defects can be satisfactorily described by the Poole-Frenkel theory. An electric field dependence different from that expected from the Poole-Frenkel theory has been repeatedly reported in the literature, and no unambiguous identification of the charge state of the defect could be made. In this article, the electric field dependencies of emission of carriers from DX centers in AlxGa1-xAs:Te, Cu pairs in silicon, and Ge:Hg have been studied applying static and terahertz electric fields, and analyzed by using the models of Poole-Frenkel and phonon assisted tunneling. It is shown that phonon assisted tunneling and Poole-Frenkel emission are two competitive mechanisms of enhancement of emission of carriers, and their relative contribution is determined by the charge state of the defect and by the electric-field strength. At high-electric field strengths carrier emission is dominated by tunneling independently of the charge state of the impurity. For neutral impurities, where Poole-Frenkel lowering of the emission barrier does not occur, the phonon assisted tunneling model describes well the experimental data also in the low-field region. For charged impurities the transition from phonon assisted tunneling at high fields to Poole-Frenkel effect at low fields can be traced back. It is suggested that the Poole-Frenkel and tunneling models can be distinguished by plotting logarithm of the emission rate against the square root or against the square of the electric field, respectively. This analysis enables one to unambiguously determine the charge state of a deep-level defect
Experimental Study of the Shortest Reset Word of Random Automata
In this paper we describe an approach to finding the shortest reset word of a
finite synchronizing automaton by using a SAT solver. We use this approach to
perform an experimental study of the length of the shortest reset word of a
finite synchronizing automaton. The largest automata we considered had 100
states. The results of the experiments allow us to formulate a hypothesis that
the length of the shortest reset word of a random finite automaton with
states and 2 input letters with high probability is sublinear with respect to
and can be estimated as $1.95 n^{0.55}.
Two-proton correlations from 158 AGeV Pb+Pb central collisions
The two-proton correlation function at midrapidity from Pb+Pb central
collisions at 158 AGeV has been measured by the NA49 experiment. The results
are compared to model predictions from static thermal Gaussian proton source
distributions and transport models RQMD and VENUS. An effective proton source
size is determined by minimizing CHI-square/ndf between the correlation
functions of the data and those calculated for the Gaussian sources, yielding
3.85 +-0.15(stat.) +0.60-0.25(syst.) fm. Both the RQMD and the VENUS model are
consistent with the data within the error in the correlation peak region.Comment: RevTeX style, 6 pages, 4 figures, 1 table. More discussion are added
about the structure on the tail of the correlation function. The systematic
error is revised. To appear in Phys. Lett.
Baryon Stopping and Charged Particle Distributions in Central Pb+Pb Collisions at 158 GeV per Nucleon
Net proton and negative hadron spectra for central \PbPb collisions at 158
GeV per nucleon at the CERN SPS were measured and compared to spectra from
lighter systems. Net baryon distributions were derived from those of net
protons, utilizing model calculations of isospin contributions as well as data
and model calculations of strange baryon distributions. Stopping (rapidity
shift with respect to the beam) and mean transverse momentum \meanpt of net
baryons increase with system size. The rapidity density of negative hadrons
scales with the number of participant nucleons for nuclear collisions, whereas
their \meanpt is independent of system size. The \meanpt dependence upon
particle mass and system size is consistent with larger transverse flow
velocity at midrapidity for \PbPb compared to \SS central collisions.Comment: This version accepted for publication in PRL. 4 pages, 3 figures.
Typos corrected, some paragraphs expanded in response to referee comments, to
better explain details of analysi
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