17,310 research outputs found

    Pattern-recalling processes in quantum Hopfield networks far from saturation

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    As a mathematical model of associative memories, the Hopfield model was now well-established and a lot of studies to reveal the pattern-recalling process have been done from various different approaches. As well-known, a single neuron is itself an uncertain, noisy unit with a finite unnegligible error in the input-output relation. To model the situation artificially, a kind of 'heat bath' that surrounds neurons is introduced. The heat bath, which is a source of noise, is specified by the 'temperature'. Several studies concerning the pattern-recalling processes of the Hopfield model governed by the Glauber-dynamics at finite temperature were already reported. However, we might extend the 'thermal noise' to the quantum-mechanical variant. In this paper, in terms of the stochastic process of quantum-mechanical Markov chain Monte Carlo method (the quantum MCMC), we analytically derive macroscopically deterministic equations of order parameters such as 'overlap' in a quantum-mechanical variant of the Hopfield neural networks (let us call "quantum Hopfield model" or "quantum Hopfield networks"). For the case in which non-extensive number pp of patterns are embedded via asymmetric Hebbian connections, namely, p/N0p/N \to 0 for the number of neuron NN \to \infty ('far from saturation'), we evaluate the recalling processes for one of the built-in patterns under the influence of quantum-mechanical noise.Comment: 10 pages, 3 figures, using jpconf.cls, Proc. of Statphys-Kolkata VI

    Exact Computation of Influence Spread by Binary Decision Diagrams

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    Evaluating influence spread in social networks is a fundamental procedure to estimate the word-of-mouth effect in viral marketing. There are enormous studies about this topic; however, under the standard stochastic cascade models, the exact computation of influence spread is known to be #P-hard. Thus, the existing studies have used Monte-Carlo simulation-based approximations to avoid exact computation. We propose the first algorithm to compute influence spread exactly under the independent cascade model. The algorithm first constructs binary decision diagrams (BDDs) for all possible realizations of influence spread, then computes influence spread by dynamic programming on the constructed BDDs. To construct the BDDs efficiently, we designed a new frontier-based search-type procedure. The constructed BDDs can also be used to solve other influence-spread related problems, such as random sampling without rejection, conditional influence spread evaluation, dynamic probability update, and gradient computation for probability optimization problems. We conducted computational experiments to evaluate the proposed algorithm. The algorithm successfully computed influence spread on real-world networks with a hundred edges in a reasonable time, which is quite impossible by the naive algorithm. We also conducted an experiment to evaluate the accuracy of the Monte-Carlo simulation-based approximation by comparing exact influence spread obtained by the proposed algorithm.Comment: WWW'1

    Ambipolar Diffusion-Mediated Thermal Fronts in the Neutral ISM

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    In a thermally bistable medium, cold, dense gas is separated from warm, rareified gas by thin phase transition layers, or fronts, in which heating, radiative cooling, thermal conduction, and convection of material are balanced. We calculate the steady-state structure of such fronts in the presence of magnetic fields, including the processes of ion-neutral drift and ion-neutral frictional heating. We find that ambipolar diffusion efficiently transports the magnetic field across the fronts, leading to a flat magnetic field strength profile. The thermal profiles of such fronts are not significantly different from those of unmagnetized fronts. The near uniformity of the magnetic field strength across a front is consistent with the flat field strength-gas density relation that is observed in diffuse interstellar gas.Comment: 17 pages, 12 figures, 1 table, accepted for publication in Ap

    Prompt GeV-TeV Emission of Gamma-Ray Bursts Due to High-Energy Protons, Muons and Electron-Positron Pairs

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    In the framework of the internal shock scenario, we model the broadband prompt emission of gamma-ray bursts (GRBs) with emphasis on the GeV-TeV bands, utilizing Monte Carlo simulations that include various processes associated with electrons and protons accelerated to high energies. While inverse Compton emission from primary electrons is often dominant, different proton-induced mechanisms can also give rise to distinct high-energy components, such as synchrotron emission from protons, muons or secondary electrons/positrons injected via photomeson interactions. In some cases, they give rise to double spectral breaks that can serve as unique signatures of ultra-high-energy protons. We discuss the conditions favorable for such emission, and how they are related to the production of ultra-high-energy cosmic rays and neutrinos in internal shocks. Ongoing and upcoming observations by {\it GLAST}, atmospheric Cerenkov telescopes and other facilities will test these expectations and provide important information on the physical conditions in GRB outflows.Comment: 11 pages, 8 figures and 14 appendix figures, accepted for publication in ApJ vol. 671 with minor revision

    Band engineering of a magnetic thin film rare earth monopnictide

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    Realizing quantum materials in few atomic layer morphologies is a key to both observing and controlling a wide variety of exotic quantum phenomena. This includes topological electronic materials, where the tunability and dimensionality of few layer materials have enabled the detection of Z2Z_2, Chern, and Majorana phases. Here, we report the development of a platform for thin film correlated, topological states in the magnetic rare-earth monopnictide (RXRX) system GdBi synthesized by molecular beam epitaxy. This material is known from bulk single crystal studies to be semimetallic antiferromagnets with Neel temperature TN=T_N = 28 K and is the magnetic analog of the non-ff-electron containing system LaBi proposed to have topological surface states. Our transport and magnetization studies of thin films grown epitaxially on BaF2_2 reveal that semimetallicity is lifted below approximately 8 crystallographic unit cells while magnetic order is maintained down to our minimum thickness of 5 crystallographic unit cells. First-principles calculations show that the non-trivial topology is preserved down to the monolayer limit, where quantum confinement and the lattice symmetry give rise to a C=2C=2 Chern insulator phase. We further demonstrate the stabilization of these films against atmospheric degradation using a combination of air-free buffer and capping procedures. These results together identify thin film RXRX materials as potential platforms for engineering topological electronic bands in correlated magnetic materials

    Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

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    A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2K shows a thermal-activation-type behavior with an activation energy of 0.6eV

    A mechanism for unipolar resistance switching in oxide non-volatile memory devices

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    Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface are found to play a key role to produce a resistive commutation effect in qualitative agreement with recent experimental reports on binary transition metal oxide based sandwich structures.Comment: 4 pages, 2 figure
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