7,694 research outputs found

    Dynamic modeling and adaptive control for space stations

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    Of all large space structural systems, space stations present a unique challenge and requirement to advanced control technology. Their operations require control system stability over an extremely broad range of parameter changes and high level of disturbances. During shuttle docking the system mass may suddenly increase by more than 100% and during station assembly the mass may vary even more drastically. These coupled with the inherent dynamic model uncertainties associated with large space structural systems require highly sophisticated control systems that can grow as the stations evolve and cope with the uncertainties and time-varying elements to maintain the stability and pointing of the space stations. The aspects of space station operational properties are first examined, including configurations, dynamic models, shuttle docking contact dynamics, solar panel interaction, and load reduction to yield a set of system models and conditions. A model reference adaptive control algorithm along with the inner-loop plant augmentation design for controlling the space stations under severe operational conditions of shuttle docking, excessive model parameter errors, and model truncation are then investigated. The instability problem caused by the zero-frequency rigid body modes and a proposed solution using plant augmentation are addressed. Two sets of sufficient conditions which guarantee the globablly asymptotic stability for the space station systems are obtained

    Geometric error analysis for shuttle imaging spectrometer experiment

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    The demand of more powerful tools for remote sensing and management of earth resources steadily increased over the last decade. With the recent advancement of area array detectors, high resolution multichannel imaging spectrometers can be realistically constructed. The error analysis study for the Shuttle Imaging Spectrometer Experiment system is documented for the purpose of providing information for design, tradeoff, and performance prediction. Error sources including the Shuttle attitude determination and control system, instrument pointing and misalignment, disturbances, ephemeris, Earth rotation, etc., were investigated. Geometric error mapping functions were developed, characterized, and illustrated extensively with tables and charts. Selected ground patterns and the corresponding image distortions were generated for direct visual inspection of how the various error sources affect the appearance of the ground object images

    Flexible structure control laboratory development and technology demonstration

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    An experimental structure is described which was constructed to demonstrate and validate recent emerging technologies in the active control and identification of large flexible space structures. The configuration consists of a large, 20 foot diameter antenna-like flexible structure in the horizontal plane with a gimballed central hub, a flexible feed-boom assembly hanging from the hub, and 12 flexible ribs radiating outward. Fourteen electrodynamic force actuators mounted to the hub and to the individual ribs provide the means to excite the structure and exert control forces. Thirty permanently mounted sensors, including optical encoders and analog induction devices provide measurements of structural response at widely distributed points. An experimental remote optical sensor provides sixteen additional sensing channels. A computer samples the sensors, computes the control updates and sends commands to the actuators in real time, while simultaneously displaying selected outputs on a graphics terminal and saving them in memory. Several control experiments were conducted thus far and are documented. These include implementation of distributed parameter system control, model reference adaptive control, and static shape control. These experiments have demonstrated the successful implementation of state-of-the-art control approaches using actual hardware

    Gain switching of monolithic 1.3 μm InAs/GaAs quantum dot lasers on silicon

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    © 1983-2012 IEEE. We report the first demonstration of gain-switched optical pulses generated by continuous-wave 1.3 μm InAs/GaAs quantum dot (QD) broad-area lasers directly grown on silicon. The shortest observed pulses have typical durations between 175 and 200 ps with peak output powers of up to 66 mW. By varying the drive current pulsewidth and amplitude systematically, we find that the peak optical power is maximized through sufficiently long high-amplitude drive pulses, whereas shorter drive pulses with high amplitudes yield the narrowest achievable pulses. A three-level rate equation travelling-wave model is used for the simulation of our results in order to gain a first insight into the underlying physics and the laser parameters responsible for the observed behavior. The simulations indicate that a limited gain from the InAs QDs and a very high gain compression factor are the main factors contributing to the increased pulsewidth. As the optical spectra of the tested broad-area QD laser give a clear evidence of multitransverse-mode operation, the laser's dynamic response could be additionally limited by transversal variations of the gain, carrier density, and photon density over the 50 μm wide laser waveguide

    Theoretical Study on the Effects of Dislocations in Monolithic III-V Lasers on Silicon

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    In this work, we present an approach to modelling III-V lasers on silicon based on a travelling-wave rate equation model with sub-micrometer resolution. By allowing spatially resolved inclusion of individual dislocations along the laser cavity, our simulation results offer new insights into the physical mechanisms behind the characteristics of 980 nm In(Ga)As/GaAs quantum well (QW) and 1.3 mu quantum dot (QD) lasers grown on silicon. We identify two effects with particular importance for practical applications from studying the reduction of the local gain in carrier-depleted regions around dislocation locations and the resulting impact on threshold current increase and slope efficiency at high dislocation densities. First, a large minority carrier diffusion length is a key parameter inhibiting laser operation by enabling carrier migration into dislocations over larger areas, and secondly, increased gain in dislocation-free regions compensating for gain dips around dislocations may contribute to gain compression effects observed in directly modulated silicon-based QD lasers. We believe that this work is an important contribution in creating a better understanding of the processes limiting the capabilities of III-V lasers on silicon in order to explore suitable materials and designs for monolithic light sources for silicon photonics.Qualcomm Inc Studentshi

    Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon

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    Small-signal experiments with a 2.5 mm-long quantum dot narrow ridge-waveguide laser on silicon show a modulation bandwidth of 1.6 GHz. For the first time, we report key high-speed parameters such as the differential gain and the gain compression factor

    Application of quasi-Monte Carlo methods to PDEs with random coefficients -- an overview and tutorial

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    This article provides a high-level overview of some recent works on the application of quasi-Monte Carlo (QMC) methods to PDEs with random coefficients. It is based on an in-depth survey of a similar title by the same authors, with an accompanying software package which is also briefly discussed here. Embedded in this article is a step-by-step tutorial of the required analysis for the setting known as the uniform case with first order QMC rules. The aim of this article is to provide an easy entry point for QMC experts wanting to start research in this direction and for PDE analysts and practitioners wanting to tap into contemporary QMC theory and methods.Comment: arXiv admin note: text overlap with arXiv:1606.0661

    Understanding the bandwidth limitations in monolithic 1.3 μm InAs/GaAs quantum dot lasers on silicon

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    In this paper, we present measurements and simulations of the small-signal modulation response of monolithic continuous-wave 1.3 μm InAs/GaAs quantum dot (QD) narrow ridge-waveguide lasers on a silicon substrate. The 2.5 mm-long lasers investigated demonstrate 3dB modulation bandwidths of 1.6 GHz, D-factors of 0.3 GHz/mA1/2, modulation current efficiencies of 0.4 GHz/mA1/2, and K-factors of 2.4 ns and 3.7 ns. Since the devices under test are not designed for high-speed operation due to their long length and hence long photon lifetime, the modulation response curves are used as a fitting template for numerical simulations with spatiotemporal resolution to gain insight into the underlying laser physics. The obtained parameter set is used to unveil the true potential of the laser material in an optimized device geometry by modeling the small-signal response at different cavity lengths, mirror reflectivities, and for different numbers of QD layers. The simulations predict a maximum 3dB modulation bandwidth of 5 GHz to 7 GHz for a 0.75 mm-long cavity with 99 % and 60 % high-reflection coatings and ten QD layers. Modeling the impact of dislocations on the dynamic performance qualitatively reveals that enhanced non-radiative recombination in the wetting layer leaves the modulation bandwidth of QD lasers on silicon almost unaffected, while dislocation-induced optical loss does not pose a problem, as long as sufficient gain is provided by the QD active region.UK EPSRC Grant, No. EP/J012904/1 & EP/J012815/1 Qualcomm Inc. studentship Royal Academy of Engineering, Reference No. RF201617/16/2
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