ZnSTe coherently grown onto GaP substrates by molecular beam epitaxy using ZnS buffer layers

ZnS1-xTex epitaxial layers with x ~ 0.06, nearly lattice-matched to GaP substrates, have been grown by molecular beam epitaxy. Direct growth of the layers onto the substrates results in poor crystal quality, showing no sign of coherent growth. This seems to be due to alloy composition deviation at the initial stage of the growth. To avoid the problem, a thin coherent ZnS buffer layer has been inserted at the ZnSTe/GaP interface. With the buffer layers, coherent growth of ZnSTe layers is achieved and the crystal quality has been improved

Time-resolved spectroscopy of biexciton luminescence in ZnxCd1-xSe-ZnSySe1-y multiple quantum wells

The radiative lifetime of biexcitons in ZnxCd1-xSe-ZnSySe1-y multiple quantum wells has been studied by means of time-resolved luminescence spectroscopy under high-density excitation. It is shown that the rise of the biexciton luminescence becomes more rapid with increasing excitation energy density and that the biexciton luminescence decays with a double exponential form. It is found that the decay-time constant of the faster-decay component in the double-exponential decay corresponds to the radiative lifetime of the biexciton. Its value is about 6 ps at 2 K and is about one-seventh of that in bulk ZnSe (∼40 ps)

発光素子用ZnCdSSe四元系ヘテロ構造の分子線エピタキシーと評価に関する研究

京都大学0048新制・課程博士博士(工学)甲第5725号工博第1371号新制||工||949(附属図書館)UT51-94-J157京都大学大学院工学研究科電気工学専攻(主査)教授 藤田 茂夫, 教授 佐々木 昭夫, 教授 松波 弘之学位規則第4条第1項該当Doctor of EngineeringKyoto UniversityDFA