49 research outputs found

    Some light-traffic and heavy-traffic results for the GI/G/n/0 queue using the GM Heuristic

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    ΠŸΡ€ΠΎΠ°Π½Π°Π»Ρ–Π·ΠΎΠ²Π°Π½ΠΎ ΠΉΠΌΠΎΠ²Ρ–Ρ€Π½ΠΎΡΡ‚ΡŒ Π²Ρ‚Ρ€Π°Ρ‚ΠΈ Π²ΠΈΠΌΠΎΠ³ΠΈ Π² Π±Π°Π³Π°Ρ‚ΠΎΠΊΠ°Π½Π°Π»ΡŒΠ½Ρ–ΠΉ систСмі обслуговування Π· Π²Ρ–Π΄ΠΌΠΎΠ²Π°ΠΌΠΈ GI/G/n/0 як Ρƒ Π²ΠΈΠΏΠ°Π΄ΠΊΡƒ ΠΌΠ°Π»ΠΎΠ³ΠΎ навантаТСння, Ρ‚Π°ΠΊ Ρ– Π²Π΅Π»ΠΈΠΊΠΎΠ³ΠΎ. Аналіз оснований Π½Π° Свристиці GM , для якої Π²ΠΈΠΏΠ°Π΄ΠΎΠΊ ΠΏΠΎΠΌΡ–Ρ€Π½ΠΎΠ³ΠΎ навантаТСння Π΄Π΅Ρ‚Π°Π»ΡŒΠ½ΠΎ Π²ΠΈΠ²Ρ‡Π΅Π½ΠΎ Ρ€Π°Π½Ρ–ΡˆΠ΅. Π—Π½Π°ΠΉΠ΄Π΅Π½ΠΎ достатні ΡƒΠΌΠΎΠ²ΠΈ для асимптотичної точності Свристики GM Ρƒ Π²ΠΈΠΏΠ°Π΄ΠΊΡƒ ΠΌΠ°Π»ΠΎΠ³ΠΎ навантаТСння. Ця Свристика ΠΌΠ°Ρ” Π²ΠΊΠ°Π·Π°Π½Ρƒ Π²Π»Π°ΡΡ‚ΠΈΠ²Ρ–ΡΡ‚ΡŒ Ρ‚Π°ΠΊΠΎΠΆ Ρƒ Π²ΠΈΠΏΠ°Π΄ΠΊΡƒ Π²Π΅Π»ΠΈΠΊΠΎΠ³ΠΎ навантаТСння, якщо число ΠΊΠ°Π½Π°Π»Ρ–Π² n прямує Π΄ΠΎ нСскінчСнності.In this paper we carry out both light-traffic and heavy-traffic analyses for the calculation of steady-state loss probabilities in the general multi-server queueing loss system, the GI /G/n/0 queue. The analysis makes use of a heuristic approach called the GM Heuristic, for which a detailed analysis in normal traffic has previously been published. Sufficient conditions are given for the GM Heuristic to be asymptotically exact in light traffic. The heuristic is also shown to be asymptotically exact in heavy-traffic when the number of servers n tends to infinity. These results are illustrated numerically using two-phase Coxian distributions for both the inter-arrival time and service time

    Goniometer control

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    The control unit for the goniometer has been developed and manufactured. The unit includes four independent programmable stepper motor control channels, three logical channels for analyzing the state of limit switches and a power supply. Powerful field-effect transistors of the company International Rectifier are used as controlled power switches. To generate output signals and communicate with a computer, an ATmega328 microprocessor is used in each control channel. This channel design allows you to control almost any type of stepper motors, you only need to replace the control program. The software is written using the WinAVR package which has a General Public License. Data transfer between the computer and the unit is carried out via the USB interface.Π ΠΎΠ·Ρ€ΠΎΠ±Π»Π΅Π½ΠΎ Ρ‚Π° Π²ΠΈΠ³ΠΎΡ‚ΠΎΠ²Π»Π΅Π½ΠΎ Π±Π»ΠΎΠΊ управління Π³ΠΎΠ½Ρ–ΠΎΠΌΠ΅Ρ‚Ρ€ΠΎΠΌ. Π”ΠΎ складу Π±Π»ΠΎΠΊΡƒ Π²Ρ…ΠΎΠ΄ΡΡ‚ΡŒ Ρ‡ΠΎΡ‚ΠΈΡ€ΠΈ Π½Π΅Π·Π°Π»Π΅ΠΆΠ½ΠΈΡ… ΠΏΡ€ΠΎΠ³Ρ€Π°ΠΌΠΎΠ²Π°Π½ΠΈΡ… ΠΊΠ°Π½Π°Π»ΠΈ кСрування ΠΊΡ€ΠΎΠΊΠΎΠ²ΠΈΠΌΠΈ Π΄Π²ΠΈΠ³ΡƒΠ½Π°ΠΌΠΈ, Ρ‚Ρ€ΠΈ Π»ΠΎΠ³Ρ–Ρ‡Π½ΠΈΡ… ΠΊΠ°Π½Π°Π»ΠΈ Π°Π½Π°Π»Ρ–Π·Ρƒ стану ΠΊΡ–Π½Ρ†Π΅Π²ΠΈΡ… Π²ΠΈΠΌΠΈΠΊΠ°Ρ‡Ρ–Π² Ρ‚Π° Π΄ΠΆΠ΅Ρ€Π΅Π»ΠΎ СлСктроТивлСння. Π’ якості ΠΊΠ΅Ρ€ΠΎΠ²Π°Π½ΠΈΡ… силових ΠΊΠ»ΡŽΡ‡Ρ–Π² Π²ΠΈΠΊΠΎΡ€ΠΈΡΡ‚ΠΎΠ²ΡƒΡŽΡ‚ΡŒΡΡ ΠΏΠΎΡ‚ΡƒΠΆΠ½Ρ– ΠΏΠΎΠ»ΡŒΠΎΠ²Ρ– транзистори Ρ„Ρ–Ρ€ΠΌΠΈ International Rectifier. Для формування Π²ΠΈΡ…Ρ–Π΄Π½ΠΈΡ… сигналів Ρ– зв’язку Π· ΠΊΠΎΠΌΠΏβ€™ΡŽΡ‚Π΅Ρ€ΠΎΠΌ Ρƒ ΠΊΠΎΠΆΠ½ΠΎΠΌΡƒ ΠΊΠ°Π½Π°Π»Ρ– управління Π²ΠΈΠΊΠΎΡ€ΠΈΡΡ‚ΠΎΠ²ΡƒΡ”Ρ‚ΡŒΡΡ мікропроцСсор ATmega328. Π’Π°ΠΊΠ° ΠΏΠΎΠ±ΡƒΠ΄ΠΎΠ²Π° ΠΊΠ°Π½Π°Π»Ρƒ дозволяє управляти ΠΏΡ€Π°ΠΊΡ‚ΠΈΡ‡Π½ΠΎ Π±ΡƒΠ΄ΡŒ-яким Ρ‚ΠΈΠΏΠΎΠΌ ΠΊΡ€ΠΎΠΊΠΎΠ²ΠΈΡ… Π΄Π²ΠΈΠ³ΡƒΠ½Ρ–Π², ΠΏΠΎΡ‚Ρ€Ρ–Π±Π½ΠΎ Ρ‚Ρ–Π»ΡŒΠΊΠΈ Π·Π°ΠΌΡ–Π½ΠΈΡ‚ΠΈ ΠΏΡ€ΠΎΠ³Ρ€Π°ΠΌΡƒ управління. ΠŸΡ€ΠΎΠ³Ρ€Π°ΠΌΠ½Π΅ забСзпСчСння написано Π· використанням ΠΏΠ°ΠΊΠ΅Ρ‚Π° WinAVRΠ± який ΠΌΠ°Ρ” General Public License. ΠŸΠ΅Ρ€Π΅Π΄Π°Ρ‡Π° Π΄Π°Π½ΠΈΡ… ΠΌΡ–ΠΆ ΠΊΠΎΠΌΠΏβ€™ΡŽΡ‚Π΅Ρ€ΠΎΠΌ Ρ‚Π° Π±Π»ΠΎΠΊΠΎΠΌ Π·Π΄Ρ–ΠΉΡΠ½ΡŽΡ”Ρ‚ΡŒΡΡ Π·Π° допомогою USB-інтСрфСйсу.Π Π°Π·Ρ€Π°Π±ΠΎΡ‚Π°Π½ ΠΈ ΠΈΠ·Π³ΠΎΡ‚ΠΎΠ²Π»Π΅Π½ Π±Π»ΠΎΠΊ управлСния Π³ΠΎΠ½ΠΈΠΎΠΌΠ΅Ρ‚Ρ€ΠΎΠΌ. Π’ состав Π±Π»ΠΎΠΊΠ° входят Ρ‡Π΅Ρ‚Ρ‹Ρ€Π΅ нСзависимых ΠΏΡ€ΠΎΠ³Ρ€Π°ΠΌΠΌΠΈΡ€ΡƒΠ΅ΠΌΡ‹Ρ… ΠΊΠ°Π½Π°Π»Π° управлСния ΡˆΠ°Π³ΠΎΠ²Ρ‹ΠΌΠΈ двигатСлями, Ρ‚Ρ€ΠΈ логичСских ΠΊΠ°Π½Π°Π»Π° Π°Π½Π°Π»ΠΈΠ·Π° состояния ΠΊΠΎΠ½Π΅Ρ‡Π½Ρ‹Ρ… Π²Ρ‹ΠΊΠ»ΡŽΡ‡Π°Ρ‚Π΅Π»Π΅ΠΉ ΠΈ источник элСктропитания. Π’ качСствС управляСмых силовых ΠΊΠ»ΡŽΡ‡Π΅ΠΉ ΠΈΡΠΏΠΎΠ»ΡŒΠ·ΡƒΡŽΡ‚ΡΡ ΠΌΠΎΡ‰Π½Ρ‹Π΅ ΠΏΠΎΠ»Π΅Π²Ρ‹Π΅ транзисторы Ρ„ΠΈΡ€ΠΌΡ‹ International Rectifier. Для формирования Π²Ρ‹Ρ…ΠΎΠ΄Π½Ρ‹Ρ… сигналов ΠΈ связи с ΠΊΠΎΠΌΠΏΡŒΡŽΡ‚Π΅Ρ€ΠΎΠΌ Π² ΠΊΠ°ΠΆΠ΄ΠΎΠΌ ΠΊΠ°Π½Π°Π»Π΅ управлСния ΠΈΡΠΏΠΎΠ»ΡŒΠ·ΡƒΠ΅Ρ‚ΡΡ микропроцСссор ATmega328. Π’Π°ΠΊΠΎΠ΅ построСниС ΠΊΠ°Π½Π°Π»Π° позволяСт ΡƒΠΏΡ€Π°Π²Π»ΡΡ‚ΡŒ практичСски Π»ΡŽΠ±Ρ‹ΠΌ Ρ‚ΠΈΠΏΠΎΠΌ ΡˆΠ°Π³ΠΎΠ²Ρ‹Ρ… Π΄Π²ΠΈΠ³Π°Ρ‚Π΅Π»Π΅ΠΉ, трСбуСтся Ρ‚ΠΎΠ»ΡŒΠΊΠΎ Π·Π°ΠΌΠ΅Π½ΠΈΡ‚ΡŒ ΠΏΡ€ΠΎΠ³Ρ€Π°ΠΌΠΌΡƒ управлСния. ΠŸΡ€ΠΎΠ³Ρ€Π°ΠΌΠΌΠ½ΠΎΠ΅ обСспСчСниС написано с использованиСм ΠΏΠ°ΠΊΠ΅Ρ‚Π° WinAVR, ΠΈΠΌΠ΅ΡŽΡ‰Π΅Π³ΠΎ General Public License. ΠŸΠ΅Ρ€Π΅Π΄Π°Ρ‡Π° Π΄Π°Π½Π½Ρ‹Ρ… ΠΌΠ΅ΠΆΠ΄Ρƒ ΠΊΠΎΠΌΠΏΡŒΡŽΡ‚Π΅Ρ€ΠΎΠΌ ΠΈ Π±Π»ΠΎΠΊΠΎΠΌ осущСствляСтся ΠΏΠΎ USB-интСрфСйсу

    Random line tessellations of the plane: statistical properties of many-sided cells

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    We consider a family of random line tessellations of the Euclidean plane introduced in a much more formal context by Hug and Schneider [Geom. Funct. Anal. 17, 156 (2007)] and described by a parameter \alpha\geq 1. For \alpha=1 the zero-cell (that is, the cell containing the origin) coincides with the Crofton cell of a Poisson line tessellation, and for \alpha=2 it coincides with the typical Poisson-Voronoi cell. Let p_n(\alpha) be the probability for the zero-cell to have n sides. By the methods of statistical mechanics we construct the asymptotic expansion of \log p_n(\alpha) up to terms that vanish as n\to\infty. In the large-n limit the cell is shown to become circular. The circle is centered at the origin when \alpha>1, but gets delocalized for the Crofton cell, \alpha=1, which is a singular point of the parameter range. The large-n expansion of \log p_n(1) is therefore different from that of the general case and we show how to carry it out. As a corollary we obtain the analogous expansion for the {\it typical} n-sided cell of a Poisson line tessellation.Comment: 26 pages, 3 figure

    Secondary electron emission from thin aluminum foils produced by high-energy electron beams

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    The description of the experimental equipment and technique for measuring the secondary emission of electrons (SEE) with application of accelerated electrons at the linear accelerator of the IHEPNP NSC KIPT with energies up to 30 MeV and a standard secondary emission monitor [1] are presented. Experimental data of secondary electron emission yields from thin aluminum targets (8 and 50 ΞΌm) for primary electron beam energies of 16 and 25 MeV have been experimentally measured. The analysis of the experimental data and their comparison with the theory are carried out. It is shown that the proposed technique for measuring the yields of secondary electron emission is useful and applied for study of low-energy and Ξ΄-electrons yields from thin foils, as well as to research the effect of the density effect depending on the energy of the primary electron beam.Надано опис Π΅ΠΊΡΠΏΠ΅Ρ€ΠΈΠΌΠ΅Π½Ρ‚Π°Π»ΡŒΠ½ΠΎΠ³ΠΎ обладнання Ρ‚Π° ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΈΠΊΠΈ Π²ΠΈΠΌΡ–Ρ€ΡŽΠ²Π°Π½Π½Ρ Π²ΠΈΡ…ΠΎΠ΄Ρ–Π² Π²Ρ‚ΠΎΡ€ΠΈΠ½Π½ΠΎΡ— Смісії Π΅Π»Π΅ΠΊΡ‚Ρ€ΠΎΠ½Ρ–Π² (Π’Π•Π•) ΠΏΡ€ΠΈ використанні ΠΏΡƒΡ‡ΠΊΠ° прискорСних Π΅Π»Π΅ΠΊΡ‚Ρ€ΠΎΠ½Ρ–Π² Π½Π° Π»Ρ–Π½Ρ–ΠΉΠ½ΠΎΠΌΡƒ ΠΏΡ€ΠΈΡΠΊΠΎΡ€ΡŽΠ²Π°Ρ‡Ρ– Π†Π€Π’Π•Π―Π€ ННЦ Π₯Π€Π’Π† Π· Π΅Π½Π΅Ρ€Π³Ρ–Ρ”ΡŽ Π΄ΠΎ 30 ΠœΠ΅Π’ Ρ– стандартного ΠΌΠΎΠ½Ρ–Ρ‚ΠΎΡ€Π° Π²Ρ‚ΠΎΡ€ΠΈΠ½Π½ΠΎΡ— Смісії [1]. ΠžΡ‚Ρ€ΠΈΠΌΠ°Π½ΠΎ Π΅ΠΊΡΠΏΠ΅Ρ€ΠΈΠΌΠ΅Π½Ρ‚Π°Π»ΡŒΠ½Ρ– Π΄Π°Π½Ρ– ΠΏΠΎ Π²ΠΈΡ…ΠΎΠ΄Π°Ρ… Π²Ρ‚ΠΎΡ€ΠΈΠ½Π½ΠΎΡ— Смісії Π΅Π»Π΅ΠΊΡ‚Ρ€ΠΎΠ½Ρ–Π² Π· Ρ‚ΠΎΠ½ΠΊΠΈΡ… ΠΌΡ–ΡˆΠ΅Π½Π΅ΠΉ Π°Π»ΡŽΠΌΡ–Π½Ρ–ΡŽ (8 Ρ– 50 ΠΌΠΊΠΌ) для Π΅Π½Π΅Ρ€Π³Ρ–Ρ— ΠΏΠ΅Ρ€Π²ΠΈΠ½Π½ΠΎΠ³ΠΎ ΠΏΡƒΡ‡ΠΊΠ° Π΅Π»Π΅ΠΊΡ‚Ρ€ΠΎΠ½Ρ–Π² 16 Ρ– 25 ΠœΠ΅Π’. ΠŸΡ€ΠΎΠ²Π΅Π΄Π΅Π½ΠΎ Π°Π½Π°Π»Ρ–Π· Π΅ΠΊΡΠΏΠ΅Ρ€ΠΈΠΌΠ΅Π½Ρ‚Π°Π»ΡŒΠ½ΠΈΡ… Π΄Π°Π½ΠΈΡ… Ρ– порівняння Ρ—Ρ… Π· Ρ‚Π΅ΠΎΡ€Ρ–Ρ”ΡŽ. Показано, Ρ‰ΠΎ Π·Π°ΠΏΡ€ΠΎΠΏΠΎΠ½ΠΎΠ²Π°Π½Π° ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΈΠΊΠ° Π²ΠΈΠΌΡ–Ρ€ΡŽΠ²Π°Π½Π½Ρ Π²ΠΈΡ…ΠΎΠ΄Ρ–Π² Π²Ρ‚ΠΎΡ€ΠΈΠ½Π½ΠΎΡ— Смісії Π΅Π»Π΅ΠΊΡ‚Ρ€ΠΎΠ½Ρ–Π² дозволяє ΠΎΡ‚Ρ€ΠΈΠΌΡƒΠ²Π°Ρ‚ΠΈ Π΄Π°Π½Ρ– ΠΏΠΎ Π²ΠΈΡ…ΠΎΠ΄Π°Ρ… Π½ΠΈΠ·ΡŒΠΊΠΎΠ΅Π½Π΅Ρ€Π³Π΅Ρ‚ΠΈΡ‡Π½ΠΈΡ… Ρ– Ξ΄-Π΅Π»Π΅ΠΊΡ‚Ρ€ΠΎΠ½Ρ–Π², Π° Ρ‚Π°ΠΊΠΎΠΆ дослідити Π²ΠΏΠ»ΠΈΠ² Π΅Ρ„Π΅ΠΊΡ‚Ρƒ густини Π² залСТності Π²Ρ–Π΄ Π΅Π½Π΅Ρ€Π³Ρ–Ρ— ΠΏΠ΅Ρ€Π²ΠΈΠ½Π½ΠΎΠ³ΠΎ ΠΏΡƒΡ‡ΠΊΠ° Π΅Π»Π΅ΠΊΡ‚Ρ€ΠΎΠ½Ρ–Π².ΠŸΡ€ΠΈΠ²Π΅Π΄Π΅Π½ΠΎ описаниС ΡΠΊΡΠΏΠ΅Ρ€ΠΈΠΌΠ΅Π½Ρ‚Π°Π»ΡŒΠ½ΠΎΠ³ΠΎ оборудования ΠΈ ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΈΠΊΠΈ измСрСния Π²Ρ‚ΠΎΡ€ΠΈΡ‡Π½ΠΎΠΉ эмиссии элСктронов (Π’Π­Π­) с использованиСм ускорСнных элСктронов Π½Π° Π»ΠΈΠ½Π΅ΠΉΠ½ΠΎΠΌ ускоритСлС Π˜Π€Π’Π­Π―ΠŸ ННЦ Π₯ЀВИ с энСргиями Π΄ΠΎ 30 ΠœΡΠ’ ΠΈ стандартном ΠΌΠΎΠ½ΠΈΡ‚ΠΎΡ€Π΅ Π²Ρ‚ΠΎΡ€ΠΈΡ‡Π½ΠΎΠΉ эмиссии [1]. Π­ΠΊΡΠΏΠ΅Ρ€ΠΈΠΌΠ΅Π½Ρ‚Π°Π»ΡŒΠ½ΠΎ ΠΈΠ·ΠΌΠ΅Ρ€Π΅Π½Ρ‹ Π²Ρ‹Ρ…ΠΎΠ΄Ρ‹ Π²Ρ‚ΠΎΡ€ΠΈΡ‡Π½ΠΎΠΉ элСктронной эмиссии ΠΈΠ· Ρ‚ΠΎΠ½ΠΊΠΈΡ… Π°Π»ΡŽΠΌΠΈΠ½ΠΈΠ΅Π²Ρ‹Ρ… мишСнСй (8 ΠΈ 50 ΠΌΠΊΠΌ) ΠΏΡ€ΠΈ энСргиях ΠΏΠ΅Ρ€Π²ΠΈΡ‡Π½ΠΎΠ³ΠΎ элСктронного ΠΏΡƒΡ‡ΠΊΠ° 16 ΠΈ 25 ΠœΡΠ’. ΠŸΡ€ΠΎΠ²Π΅Π΄Π΅Π½ Π°Π½Π°Π»ΠΈΠ· ΡΠΊΡΠΏΠ΅Ρ€ΠΈΠΌΠ΅Π½Ρ‚Π°Π»ΡŒΠ½Ρ‹Ρ… Π΄Π°Π½Π½Ρ‹Ρ… ΠΈ ΠΈΡ… сравнСниС с Ρ‚Π΅ΠΎΡ€ΠΈΠ΅ΠΉ. Показано, Ρ‡Ρ‚ΠΎ прСдлоТСнная ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΈΠΊΠ° измСрСния Π²Ρ‹Ρ…ΠΎΠ΄ΠΎΠ² Π²Ρ‚ΠΎΡ€ΠΈΡ‡Π½ΠΎΠΉ эмиссии элСктронов позволяСт ΠΏΠΎΠ»ΡƒΡ‡Π°Ρ‚ΡŒ Π΄Π°Π½Π½Ρ‹Π΅ ΠΏΠΎ Π²Ρ‹Ρ…ΠΎΠ΄Π°ΠΌ низкоэнСргСтичСских ΠΈ Ξ΄-элСктронов, Π° Ρ‚Π°ΠΊΠΆΠ΅ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Ρ‚ΡŒ влияниС эффСкта плотности Π² зависимости ΠΎΡ‚ энСргии ΠΏΠ΅Ρ€Π²ΠΈΡ‡Π½ΠΎΠ³ΠΎ ΠΏΡƒΡ‡ΠΊΠ° элСктронов

    Asymptotic Expansions for Stationary Distributions of Perturbed Semi-Markov Processes

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    New algorithms for computing of asymptotic expansions for stationary distributions of nonlinearly perturbed semi-Markov processes are presented. The algorithms are based on special techniques of sequential phase space reduction, which can be applied to processes with asymptotically coupled and uncoupled finite phase spaces.Comment: 83 page

    Three-dimensional random Voronoi tessellations: From cubic crystal lattices to Poisson point processes

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    We perturb the SC, BCC, and FCC crystal structures with a spatial Gaussian noise whose adimensional strength is controlled by the parameter a, and analyze the topological and metrical properties of the resulting Voronoi Tessellations (VT). The topological properties of the VT of the SC and FCC crystals are unstable with respect to the introduction of noise, because the corresponding polyhedra are geometrically degenerate, whereas the tessellation of the BCC crystal is topologically stable even against noise of small but finite intensity. For weak noise, the mean area of the perturbed BCC and FCC crystals VT increases quadratically with a. In the case of perturbed SCC crystals, there is an optimal amount of noise that minimizes the mean area of the cells. Already for a moderate noise (a>0.5), the properties of the three perturbed VT are indistinguishable, and for intense noise (a>2), results converge to the Poisson-VT limit. Notably, 2-parameter gamma distributions are an excellent model for the empirical of of all considered properties. The VT of the perturbed BCC and FCC structures are local maxima for the isoperimetric quotient, which measures the degre of sphericity of the cells, among space filling VT. In the BCC case, this suggests a weaker form of the recentluy disproved Kelvin conjecture. Due to the fluctuations of the shape of the cells, anomalous scalings with exponents >3/2 is observed between the area and the volumes of the cells, and, except for the FCC case, also for a->0. In the Poisson-VT limit, the exponent is about 1.67. As the number of faces is positively correlated with the sphericity of the cells, the anomalous scaling is heavily reduced when we perform powerlaw fits separately on cells with a specific number of faces

    The Main Symptoms and Syndromes in Diseases of the Digestive System

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    The article presents the main clinical symptoms and syndromes that occur in various diseases of the abdominal cavity. Both widely known and rare symptoms of gastroenterological diseΒ­ases are presented. Described symptoms and syndromes confirm the importance of the application of physical methods in the diagnosis of digestive system diseases
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