11 research outputs found

    Anomalous Hall effect in the Co-based Heusler compounds Co2_{2}FeSi and Co2_{2}FeAl

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    The anomalous Hall effect (AHE) in the Heusler compounds Co2_{2}FeSi and Co2_{2}FeAl is studied in dependence of the annealing temperature to achieve a general comprehension of its origin. We have demonstrated that the crystal quality affected by annealing processes is a significant control parameter to tune the electrical resistivity ρxx\rho_{xx} as well as the anomalous Hall resistivity ρahe\rho_{ahe}. Analyzing the scaling behavior of ρahe\rho_{ahe} in terms of ρxx\rho_{xx} points to a temperature-dependent skew scattering as the dominant mechanism in both Heusler compounds

    Scaling behavior of the spin pumping effect in ferromagnet/platinum bilayers

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    We systematically measured the DC voltage V_ISH induced by spin pumping together with the inverse spin Hall effect in ferromagnet/platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, V_ISH invariably has the same polarity. V_ISH furthermore scales with the magnetization precession cone angle with a universal prefactor, irrespective of the magnetic properties, the charge carrier transport mechanism or type. These findings quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect

    Scaling behavior of the spin pumping effect in ferromagnet/platinum bilayers

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    We systematically measured the DC voltage V_ISH induced by spin pumping together with the inverse spin Hall effect in ferromagnet/platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, V_ISH invariably has the same polarity. V_ISH furthermore scales with the magnetization precession cone angle with a universal prefactor, irrespective of the magnetic properties, the charge carrier transport mechanism or type. These findings quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect

    Anomalous Hall effect in perpendicularly magnetized Mn3-xGa thin films

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    Glas M, Ebke D, Imort I-M, Thomas P, Reiss G. Anomalous Hall effect in perpendicularly magnetized Mn3-xGa thin films. Journal Of Magnetism And Magnetic Materials. 2013;333:134-137.Mn3-xGa (x=0.1, 0.4, 0.7) thin films on MgO and SrTiO3 substrates were investigated with magnetic anisotropy perpendicular to the film plane. An anomalous Hall effect was observed for the tetragonal distorted lattice in the crystallographic D0(22) phase. The Hall resistivity Q(xy) was measured in a temperature range from 20 to 330 K. The determined skew scattering and side jump coefficients are discussed with regard to the film composition and used substrate and compared to the crystallographic and magnetic properties. (C) 2012 Elsevier By. All rights reserved
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