Modelling spatial distribution of defects and estimation of electrical degradation of silicon detectors in radiation fields at high luminosity

The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from available data on the degradation of silicon detector characteristics in radiation fields, these effects are explained in the frame of a model that supposes also the production of the SiFFCD defect due to irradiation. The displacement threshold energies - different for different crystallographic axes, considered as parameters of the model, are established and the results obtained could contribute to clarify these controversial aspects. Predictions of the degradation of electrical parameters (leakage current, effective carrier concentration and effective trapping probabilities for electrons and holes) of DOFZ silicon detectors in the hadron background of the LHC accelerator, supposing operation at -10 grdC are done. The non uniformity of the rate of production of primary defects and of complexes, as a function of depth, for incident particles with low kinetic energy was obtained by simulations in some particular and very simplifying assumptions, suggesting the possible important contribution of the low energy component of the background spectra to detector degradation.Comment: prepared for the 6-th Int. Conf. on Radiation Effects on Semiconductor Materials Detectors and Devices, Florence, Italy, Oct. 10-13, 2006, work in the frame of CERN RD 50 Collaboratio

The influence of initial impurities and irradiation conditions on defect production and annealing in silicon for particle detectors

Silicon detectors in particle physics experiments at the new accelerators or in space missions for physics goals will be exposed to extreme radiation conditions. The principal obstacles to long-term operation in these environments are the changes in detector parameters, consequence of the modifications in material properties after irradiation. The phenomenological model developed in the present paper is able to explain quantitatively, without free parameters, the production of primary defects in silicon after particle irradiation and their evolution toward equilibrium, for a large range of generation rates of primary defects. Vacancy-interstitial annihilation, interstitial migration to sinks, divacancy and vacancy-impurity complex (VP, VO, V2O, CiOi and CiCs) formation are taken into account. The effects of different initial impurity concentrations of phosphorus, oxygen and carbon, as well as of irradiation conditions are systematically studied. The correlation between the rate of defect production, the temperature and the time evolution of defect concentrations is also investigated.Comment: 14 pages, 8 figures, submitted to Nucl. Instrum. Meth. Phys. Res.

Formation and stability of self-assembled coherent islands in highly mismatched heteroepitaxy

We study the energetics of island formation in Stranski-Krastanow growth within a parameter-free approach. It is shown that an optimum island size exists for a given coverage and island density if changes in the wetting layer morphology after the 3D transition are properly taken into account. Our approach reproduces well the experimental island size dependence on coverage, and indicates that the critical layer thickness depends on growth conditions. The present study provides a new explanation for the (frequently found) rather narrow size distribution of self-assembled coherent islands.Comment: 4 pages, 5 figures, In print, Phys. Rev. Lett. Other related publications can be found at http://www.fhi-berlin.mpg.de/th/paper.htm

Using network-flow techniques to solve an optimization problem from surface-physics

The solid-on-solid model provides a commonly used framework for the description of surfaces. In the last years it has been extended in order to investigate the effect of defects in the bulk on the roughness of the surface. The determination of the ground state of this model leads to a combinatorial problem, which is reduced to an uncapacitated, convex minimum-circulation problem. We will show that the successive shortest path algorithm solves the problem in polynomial time.Comment: 8 Pages LaTeX, using Elsevier preprint style (macros included

CI Aql: a Type Ia supernova progenitor?

If recurrent novae are progenitors of Type Ia supernovae, their white dwarfs must have masses close to the Chandrasekhar limit. The most reliable means of determining white dwarf masses in recurrent novae is dynamically, via radial-velocity and rotational-broadening measurements of the companion star. Such measurements require the system to be both eclipsing and to show absorption features from the secondary star. Prior to the work reported here, the only dynamical mass estimate of a recurrent nova was for U Sco, which has a white dwarf mass of 1.55 ± 0.24M⊙. We present new time-resolved, intermediate-resolution spectroscopy of the eclipsing recurrent nova CI Aquilae (CI Aql) during quiescence. We find the mass of the white dwarf to be 1.00 ± 0.14M⊙ and the mass of the secondary star to be 2.32 ± 0.19M⊙. We estimate the radius of the secondary to be 2.07±0.06 R⊙, implying that it is a slightly evolved early A-type star. The high mass ratio of q = 2.35 ± 0.24 and the high secondary-star mass implies that the mass transfer occurs on a thermal time-scale. We suggest that CI Aql is rapidly evolving into a supersoft X-ray source, and ultimately may explode as a Type Ia supernova within 10 Myr

Inverse Low Gain Avalanche Detectors (iLGADs) for precise tracking and timing applications

Low Gain Avalanche Detector (LGAD) is the baseline sensing technology of the recently proposed Minimum Ionizing Particle (MIP) end-cap timing detectors (MTD) at the Atlas and CMS experiments. The current MTD sensor is designed as a multi-pad matrix detector delivering a poor position resolution, due to the relatively large pad area, around 1 $mm^2$; and a good timing resolution, around 20-30 ps. Besides, in his current technological incarnation, the timing resolution of the MTD LGAD sensors is severely degraded once the MIP particle hits the inter-pad region since the signal amplification is missing for this region. This limitation is named as the LGAD fill-factor problem. To overcome the fill factor problem and the poor position resolution of the MTD LGAD sensors, a p-in-p LGAD (iLGAD) was introduced. Contrary to the conventional LGAD, the iLGAD has a non-segmented deep p-well (the multiplication layer). Therefore, iLGADs should ideally present a constant gain value over all the sensitive region of the device without gain drops between the signal collecting electrodes; in other words, iLGADs should have a 100${\%}$ fill-factor by design. In this paper, tracking and timing performance of the first iLGAD prototypes is presented.Comment: Conference Proceedings of VCI2019, 15th Vienna Conference of Instrumentation, February 18-22, 2019, Vienna, Austri

Recent Technological Developments on LGAD and iLGAD Detectors for Tracking and Timing Applications

This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n++-p+-p structure, where the doping profile of the p+ layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.Comment: Keywords: silicon detectors, avalanche multiplication, timing detectors, tracking detectors. 8 pages. 8 Figure

Estimation of the frequency of isoform–genotype discrepancies at the apolipoprotein E locus in heterozygotes for the isoforms

Estimates of the impact of apolipoprotein E (apo E) alleles coding for the three common isoforms on plasma lipid levels assume genetic homogeneity among the genotype classes. To test this assumption, we have determined the apo E genotype at the two common polymorphic sites (amino acids 112 and 158) by DNA amplification and hybridisation with allele‐specific oligoprobes, in 195 unrelated Caucasian participants of the Rochester Family Heart Study previously classified as heterozygotes by isoelectric focusing (IEF). Fourteen discordant samples were initially detected. Repeat typing of these samples by both methods resolved nine discrepancies and analysis of additional blood samples from the remaining five individuals eliminated a further four discrepancies. The only truly discordant allele was found in a female subject who had an E3 isoform with the common E2 (Cys 112 , Cys 158 ) genotype. Transmission of this allele from the mother was demonstrated. From these results, we estimate the frequency of discrepancies between isoforms and common genotypes to be 0.25% in this population. Allele misclassification was caused by poor amplification of the DNA in six samples and superimposition of glycosylated and nonglycosylated apo E isoforms on isoelectric focusing gels in five samples. We conclude that the assumption of genetic homogeneity among genotype classes is valid and that misclassification due to technical difficulties is more frequent than true discordancies. © 1992 Wiley‐Liss, Inc.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/101763/1/1370090403_ftp.pd

Anti-protein C antibodies and acquired protein C resistance in SLE: novel markers for thromboembolic events and disease activity?

OBJECTIVES: Risk factors for thromboembolism in SLE are poorly understood. We hypothesized a possible role for protein C, based on its dual activity in inflammation and haemostasis and on the evidence of an association between acquired activated protein C (APC) resistance (APCR) and high-avidity anti-protein C antibodies (anti-PC) with a severe thrombotic phenotype in venous thrombosis APS patients. METHODS: In a cross-sectional study of 156 SLE patients, the presence and avidity of IgG anti-PC was established by in house-ELISA, and APCR to exogenous recombinant human APC (rhAPC) and Protac (which activates endogenous protein C) was assessed by thrombin generation-based assays. Associations with aPL profile, thrombotic history and disease activity (BILAG and SLEDAI-2K) were also established. RESULTS: Anti-PC were detected in 54.5% of patients and APCR in 59%. Anti-PC positivity was associated with APCR to both rhAPC (P <0.0001) and Protac (P =0.0001). High-avidity anti-PC, detected in 26.3% of SLE patients, were associated with APCR in patients with thrombosis only (P <0.05), and with the development of thrombosis over time (range: 0-52 years; P =0.014). High-avidity anti-PC levels correlated with SLEDAI-2K (P =0.033) and total BILAG (P =0.019); SLEDAI-2K correlated inversely with APCR to Protac (P =0.004). CONCLUSION: Anti-PC occur in patients with SLE, independently of aPL profile, and are associated with APCR. High-avidity anti-PC are associated with thrombosis and with active disease and might prove a novel marker to monitor the risk of thrombosis and disease progression in SLE