Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions

We calculate quantum transport for metal-graphene nanoribbon heterojunctions within the atomistic self-consistent Schr\"odinger/Poisson scheme. Attention is paid on both the chemical aspects of the interface bonding as well the one-dimensional electrostatics along the ribbon length. Band-bending and doping effects strongly influence the transport properties, giving rise to conductance asymmetries and a selective suppression of the subband formation. Junction electrostatics and p-type characteristics drive the conduction mechanism in the case of high work function Au, Pd and Pt electrodes, while contact resistance becomes dominant in the case of Al.Comment: 4 pages, 5 figure

Insulator-metal transition in biased finite polyyne systems

A method for the study of the electronic transport in strongly coupled electron-phonon systems is formalized and applied to a model of polyyne chains biased through metallic Au leads. We derive a stationary non equilibrium polaronic theory in the general framework of a variational formulation. The numerical procedure we propose can be readily applied if the electron-phonon interaction in the device hamiltonian can be approximated as an effective single particle electron hamiltonian. Using this approach, we predict that finite polyyne chains should manifest an insulator-metal transition driven by the non-equilibrium charging which inhibits the Peierls instability characterizing the equilibrium state.Comment: to appear at EPJ

Electron backscattering from stacking faults in SiC by means of \textit{ab initio} quantum transport calculations

We study coherent backscattering phenomena from single and multiple stacking faults (SFs) in 3C- and 4H-SiC within density functional theory quantum transport calculations. We show that SFs give rise to highly dispersive bands within both the valance and conduction bands that can be distinguished for their enhanced density of states at particular wave number subspaces. The consequent localized perturbation potential significantly scatters the propagating electron waves and strongly increases the resistance for $n$-doped systems. We argue that resonant scattering from SFs should be one of the principal degrading mechanisms for device operation in silicon carbide.Comment: 5 pages, 4 figure

Phonon Driven Nonlinear Electrical Behavior in Molecular Devices

Electronic transport in a model molecular device coupled to local phonon modes is theoretically analyzed. The method allows for obtaining an accurate approximation of the system's quantum state irrespective of the electron and phonon energy scales. Nonlinear electrical features emerge from the calculated current-voltage characteristics. The quantum corrections with respect to the adiabatic limit characterize the transport scenario, and the polaronic reduction of the effective device-lead coupling plays a fundamental role in the unusual electrical features.Comment: 14 pages, 4 figure

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An Experimental Evaluation of Resistive Defects and Different Testing Solutions in Low-Power Back-Biased SRAM Cells

This paper compares different types of resistive defects that may occur inside low-power SRAM cells, focusing on their impact on device operation. Notwithstanding the continuous evolution of SRAM device integration, manufacturing processes continue to be very sensitive to production faults, giving rise to defects that can be modeled as resistances, especially for devices designed to work in low-power modes. This work analyzes this type of resistive defect that may impair the device functionalities in subtle ways, depending on the defect characteristics and values that may not be directly or easily detectable by traditional test methods. We analyze each defect in terms of the possible effects inside the SRAM cell, its impact on power consumption, and provide guidelines for selecting the best test methods