Phase control of La2CuO4 in thin-film synthesis

The lanthanum copper oxide, La2CuO4, which is an end member of the prototype high-Tc superconductors (La,Sr)2CuO4 and (La,Ba)2CuO4, crystallizes in the "K2NiF4" structure in high-temperature bulk synthesis. The crystal chemistry, however, predicts that La2CuO4 is at the borderline of the K2NiF4 stability and that it can crystallize in the Nd2CuO4 structure at low synthesis temperatures. In this article we demonstrate that low-temperature thin-film synthesis actually crystallizes La2CuO4 in the Nd2CuO4 structure. We also show that the phase control of "K2NiF4"-type La2CuO4 versus "Nd2CuO4"-type La2CuO4 can be achieved by varying the synthesis temperature and using different substrates.Comment: 4 pages, 5 figures, submitted to PRB, revte

Large deformation of spherical vesicle studied by perturbation theory and Surface evolver

With tangent angle perturbation approach the axial symmetry deformation of a spherical vesicle in large under the pressure changes is studied by the elasticity theory of Helfrich spontaneous curvature model.Three main results in axial symmetry shape: biconcave shape, peanut shape, and one type of myelin are obtained. These axial symmetry morphology deformations are in agreement with those observed in lipsome experiments by dark-field light microscopy [Hotani, J. Mol. Biol. 178, (1984) 113] and in the red blood cell with two thin filaments (myelin) observed in living state (see, Bessis, Living Blood Cells and Their Ultrastructure, Springer-Verlag, 1973). Furthermore, the biconcave shape and peanut shape can be simulated with the help of a powerful software, Surface Evolver [Brakke, Exp. Math. 1, 141 (1992) 141], in which the spontaneous curvature can be easy taken into account.Comment: 16 pages, 6 EPS figures and 2 PS figure

Far-infrared and submillimeter-wave conductivity in electron-doped cuprate La_{2-x}Ce_xCuO_4

We performed far-infrared and submillimeter-wave conductivity experiments in the electron-doped cuprate La_{2-x}Ce_xCuO_4 with x = 0.081 (underdoped regime, T_c = 25 K). The onset of the absorption in the superconducting state is gradual in frequency and is inconsistent with the isotropic s-wave gap. Instead, a narrow quasiparticle peak is observed at zero frequency and a second peak at finite frequencies, clear fingerprints of the conductivity in a d-wave superconductor. A far-infrared conductivity peak can be attributed to 4Delta_0, or to 2Delta_0 + Delta_spin, where Delta_spin is the resonance frequency of the spin-fluctuations. The infrared conductivity as well as the suppression of the quasiparticle scattering rate below T_c are qualitatively similar to the results in the hole-doped cuprates.Comment: 5 pages, 4 figures include

Anomalously Sharp Superconducting Transitions in Overdoped La2−xSrxCuO4La_{2-x}Sr_{x}CuO_{4} Films

We present measurements of $ab$-plane resistivity $\rho_{ab}(T)$ and superfluid density [$\propto \lambda^{-2}$, $\lambda$ = magnetic penetration depth] in $La_{2-x}Sr_{x}CuO_{4}$ films. As Sr concentration $x$ exceeds about 0.22, the superconducting transition sharpens dramatically, becoming as narrow as 200 mK near the super-to-normal metal quantum critical point. At the same time, $\rho_{ab}(T)$, $\lambda^{-2}(T)$, and transition temperature $T_c$ decrease, and upward curvature develops in $\lambda^{-2}(T)$. Given the sharp transitions, we interpret these results in the context of a homogeneous d-wave superconducting state, with elastic scattering that is enhanced relative to underdoped LSCO due to weaker electron correlations. This interpretation conflicts with the viewpoint that the overdoped state is inhomogeneous due to phase separation into superconducting and normal metal regions.Comment: 21 pages including 3 figures and 56 references. This version includes responses to referees and slight correction of data on two films. Conclusions the same as befor

Spheres and Prolate and Oblate Ellipsoids from an Analytical Solution of Spontaneous Curvature Fluid Membrane Model

An analytic solution for Helfrich spontaneous curvature membrane model (H. Naito, M.Okuda and Ou-Yang Zhong-Can, Phys. Rev. E {\bf 48}, 2304 (1993); {\bf 54}, 2816 (1996)), which has a conspicuous feature of representing the circular biconcave shape, is studied. Results show that the solution in fact describes a family of shapes, which can be classified as: i) the flat plane (trivial case), ii) the sphere, iii) the prolate ellipsoid, iv) the capped cylinder, v) the oblate ellipsoid, vi) the circular biconcave shape, vii) the self-intersecting inverted circular biconcave shape, and viii) the self-intersecting nodoidlike cylinder. Among the closed shapes (ii)-(vii), a circular biconcave shape is the one with the minimum of local curvature energy.Comment: 11 pages, 11 figures. Phys. Rev. E (to appear in Sept. 1999

Study of Intrinsic Spin Hall Effect and Orbital Hall Effect in 4d- and 5d- Transition Metals

We study the intrinsic spin Hall conductivity (SHC) in various $5d$-transition metals (Ta, W, Re, Os, Ir, Pt, and Au) and 4d-transition metals (Nb, Mo, Tc, Ru, Rh, Pd, and Ag) based on the Naval Research Laboratory tight-binding model, which enables us to perform quantitatively reliable analysis. In each metal, the obtained intrinsic SHC is independent of resistivity in the low resistive regime ($\rho < 50 \mu\Omega\text{cm}$) whereas it decreases in proportion to $\rho^{-2}$ in the high resistive regime. In the low resistive regime, the SHC takes a large positive value in Pt and Pd, both of which have approximately nine $d$-electrons per ion ($n_d=9$). On the other hand, the SHC takes a large negative value in Ta, Nb, W, and Mo where $n_d<5$. In transition metals, a conduction electron acquires the trajectory-dependent phase factor that originates from the atomic wavefunction. This phase factor, which is reminiscent of the Aharonov-Bohm phase, is the origin of the SHC in paramagnetic metals and that of the anomalous Hall conductivity in ferromagnetic metals. Furthermore, each transition metal shows huge and positive $d$-orbital Hall conductivity (OHC), independently of the strength of the spin-orbit interaction (SOI). Since the OHC is much larger than the SHC, it will be possible to realize a {\it orbitronics device} made of transition metals.Comment: 17 pages, 12 figures, 3 tables, resubmitted to Physical Review

Theory of Andreev reflection in a junction with a strongly disordered semiconductor

We study the conduction of a {\sl N~-~Sm~-~S} junction, where {\sl Sm} is a strongly disordered semiconductor. The differential conductance $dI/dV$ of this {\sl N~-~Sm~-~S} structure is predicted to have a sharp peak at $V=0$. Unlike the case of a weakly disordered system, this feature persists even in the absence of an additional (Schottky) barrier on the boundary. The zero-bias conductance of such a junction $G_{NS}$ is smaller only by a numerical factor than the conductance in the normal state $G_N$. Implications for experiments on gated heterostructures with superconducting leads are discussed.Comment: 4 pages, 2 figures, to appear in Rapid Communication section of Phys. Rev.

Optical conductivity and superconductivity in LaSb2_2

We have measured the resistivity, optical conductivity, and magnetic susceptibility of LaSb$_2$ to search for clues as to the cause of the extraordinarily large linear magnetoresistance and to explore the properties of the superconducting state. We find no evidence in the optical conductivity for the formation of a charge density wave state above 20 K despite the highly layered crystal structure. In addition, only small changes to the optical reflectivity with magnetic field are observed indicating that the MR is due to scattering rate, not charge density, variations with field. Although a superconducting ground state was previously reported below a critical temperature of 0.4 K, we observe, at ambient pressure, a fragile superconducting transition with an onset at 2.5 K. In crystalline samples, we find a high degree of variability with a minority of samples displaying a full Meissner fraction below 0.2 K and fluctuations apparent up to 2.5 K. The application of pressure stabilizes the superconducting transition and reduces the anisotropy of the superconducting phase.Comment: 4 pages with 4 figure

Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by in-situ method

MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of B-Mg bilayer followed by in-situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 C. The Transmission Electron Microscopy analysis confirms the growth of a nanogranular MgB2 film and the presence of a Mg2Si compound at the surface of the film. The 150-200 nm thick films show a maximum zero resistance critical temperature TC0 above 37 K and a critical current density JC ~ 106 A/cm2 at 11K.Comment: 7 pages, 6 figures, submitted to Applied Physics Letter