Spectroscopic perspective on the interplay between electronic and magnetic properties of magnetically doped topological insulators

We combine low energy muon spin rotation (LE-$\mu$SR) and soft-X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to study the magnetic and electronic properties of magnetically doped topological insulators, (Bi,Sb)$_2$Te$_3$. We find that one achieves a full magnetic volume fraction in samples of (V/Cr)$_x$(Bi,Sb)$_{2-x}$Te$_3$ at doping levels x $\gtrsim$ 0.16. The observed magnetic transition is not sharp in temperature indicating a gradual magnetic ordering. We find that the evolution of magnetic ordering is consistent with formation of ferromagnetic islands which increase in number and/or volume with decreasing temperature. Resonant ARPES at the V $L_3$ edge reveals a nondispersing impurity band close to the Fermi level as well as V weight integrated into the host band structure. Calculations within the coherent potential approximation of the V contribution to the spectral function confirm that this impurity band is caused by V in substitutional sites. The implications of our results on the observation of the quantum anomalous Hall effect at mK temperatures are discussed

Discovery of Lorentz-violating Weyl fermion semimetal state in LaAlGe materials

We report theoretical and experimental discovery of Lorentz-violating Weyl fermion semimetal type-II state in the LaAlGe class of materials. Previously type-II Weyl state was predicted in WTe2 materials which remains unrealized in surface experiments. We show theoretically and experimentally that LaAlGe class of materials are the robust platforms for the study of type-II Weyl physics.Comment: This paper reports theoretical prediction and experimental discovery together. A detailed theoretical paper describing the topology of the full family of X(Lanthanides)AlGe materials will follow. Other related papers can be found at http://physics.princeton.edu/zahidhasangroup/index_WS.htm

Correlation of optical reflectivity with numerical calculations for a two-dimensional photonic crystal designed in Ge

A two dimensional photonic crystal (2DPhC) with triangular symmetry is investigated using optical reflectivity measurements and numerical calculations. The system has been obtained by direct laser writing, using a pulsed laser (λ = 775 nm), perforating an In-doped Ge wafer. A lattice of holes with well-defined symmetry has been designed. Analyzing the spectral signature of PBGs recorded experimentaly with finite difference time domain theoretical calculations one was able to prove the relation between the geometric parameters (hole format, lattice constant) of the system and its ability to trap and guide the radiation in specific energy range. It was shown that at low frequency and telecommunication ranges of transvelsal electric modes photonic band gap occur. This structure may have potential aplications in designing photonic devices with applications in energy storage and conversion as potential alternative to Si-based technology

The Role of Ambient Gas and Pressure on the Structuring of Hard Diamond-Like Carbon Films Synthesized by Pulsed Laser Deposition

Hard carbon thin films were synthesized on Si (100) and quartz substrates by the Pulsed Laser Deposition (PLD) technique in vacuum or methane ambient to study their suitability for applications requiring high mechanical resistance. The deposited films’ surface morphology was investigated by scanning electron microscopy, crystalline status by X-ray diffraction, packing and density by X-ray reflectivity, chemical bonding by Raman and X-ray photoelectron spectroscopy, adherence by “pull-out” measurements and mechanical properties by nanoindentation tests. Films synthesized in vacuum were a-C DLC type, while films synthesized in methane were categorized as a-C:H. The majority of PLD films consisted of two layers: one low density layer towards the surface and a higher density layer in contact with the substrate. The deposition gas pressure played a crucial role on films thickness, component layers thickness ratio, structure and mechanical properties. The films were smooth, amorphous and composed of a mixture of sp3-sp2 carbon, with sp3 content ranging between 50% and 90%. The thickness and density of the two constituent layers of a film directly determined its mechanical properties

Thickness Influence on In Vitro Biocompatibility of Titanium Nitride Thin Films Synthesized by Pulsed Laser Deposition

We report a study on the biocompatibility vs. thickness in the case of titanium nitride (TiN) films synthesized on 410 medical grade stainless steel substrates by pulsed laser deposition. The films were grown in a nitrogen atmosphere, and their in vitro cytotoxicity was assessed according to ISO 10993-5 [1]. Extensive physical-chemical analyses have been carried out on the deposited structures with various thicknesses in order to explain the differences in biological behavior: profilometry, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), X-ray diffraction and surface energy measurements. XPS revealed the presence of titanium oxynitride beside TiN in amounts that vary with the film thickness. The cytocompatibility of films seems to be influenced by their TiN surface content. The thinner films seem to be more suitable for medical applications, due to the combined high values of bonding strength and superior cytocompatibility

Double band inversion in α -Sn: Appearance of topological surface states and the role of orbital composition

The electronic structure of \graySn(001) thin films strained compressively in-plane was studied both experimentally and theoretically. A new topological surface state (TSS) located entirely within the gapless projected bulk bands is revealed by \textit{ab initio}-based tight-binding calculations as well as directly accessed by soft X-ray angle-resolved photoemission. The topological character of this state, which is a surface resonance, is confirmed by unravelling the band inversion and by calculating the topological invariants. In agreement with experiment, electronic structure calculations show the maximum density of states in the subsurface region, while the already established TSS near the Fermi level is strongly localized at the surface. Such varied behavior is explained by the differences in orbital composition between the specific TSS and its associated bulk states, respectively. This provides an orbital protection mechanism for topological states against mixing with the background of bulk bands