108 research outputs found

    Your Body Language Shapes Who You Are TED Talk Annotated Resource List

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    Goal-Setting for Knowledge Documentation using Persuasive Systems Design – Selection and Implementation of Design Principles

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    Knowledge management and knowledge documentation are essential capabilities of organizations for innovation and competition. While documenting knowledge is often induced by extrinsic motivation, persuasive systems have the potential to change behavior by emphasizing intrinsic motivation. In this study, we explore goal-setting in persuasive systems in a design science project about knowledge documentation and derive 17 design principles from literature and theories. We apply the design principles by creating a process for guided goal-setting and implement the process in a persuasive system for knowledge documentation in form of a mobile application. We evaluated the artifacts in two iterations regarding the realization of the design principles as well as the acceptance and perceived impact of the persuasive system. The study’s contribution is both the selection of the design principles, as well as the implementation in the form of a process and a mobile application

    Architecture and Evaluation Design of a Prototypical Serious Game for Business Information Visualization

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    Poorly visualized business reports may lead to wrong decisions caused by incomprehensible or misleading data. However, many companies still do not strive for adequate business information visualization (BIV), which may be due to a lack of knowledge about how to achieve it. To support managers in avoiding the pitfalls of incomprehensible reports, we are currently developing a serious game that helps players to learn about guidelines for adequate BIV. In this so-called “Dashboard Tournament”, players compete across several minigames that address specific BIV guidelines. The aim of this paper is to provide an understanding of the prototype’s architecture and to propose an experimental design for its evaluation. Researchers and practitioners may hence increase their understanding of how to design and evaluate serious games in the domain of business and information systems engineering

    Frequency dependent CV measurements of GaAs/AlGaAs heterostructures

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    A procedure is described to determine the carrier density profile in the channel of a FET by evaluating S-parameters measured over a broad frequency range. Applying this method to GaAs/AlGaAs heterostructures, a frequency dispersion of the gate capacitance has been found, which is attributed to a parasitic conducting channel

    A 2.5 ns 8 x 8-b parallel multiplier using 0.5 μm GaAs/GaAlAs heterostructure field effect transistors

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    To increase performance of GaAs LSI digital circuits, a 0.5 μm recessed gate process has been developed and utilized for an 8x8-b parallel multiplier. The chip contains about 3000 heterostructure field effect transistors and has a power consumption of 1.5 W. The best results of the maximum multiplication time measured were below 2.5 nsec

    8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 μm recessed-gate AlGaAs/GaAs HEMTs

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    An 8.2 GHz bandwidth monolithic optoelectronic receiver consisting of an MSM photodiode, a transimpedance amplifier, and a 50 Omega output buffer has been fabricated using an enhancement/depletion 0.5 μm recessed-gate AlGaAs/GaAs HEMT process. Successful operation at data rates up to 10 Gbit/s has been demonstrated

    10 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs

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    A 10 Gbit/s monolithic integrated optoelectronic receiver has been fabricated with a metal-semiconductor-metal (MSM) photodiode and enhancement/depletion 0.5 μm recessed-gate AlGaAs/GaAs HEMTs. A -3 dB bandwidth of 11.3 GHz has been achieved

    16 x 16 bit parallel multiplier based on 6 K gate array with 0.3 μm AlGaAs/GaAs quantum well transistors

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    The design and performance of a 16x16 bit parallel multiplier based on a 6 K gate array will be presented. This LSI semicustom IC demonstrates the high potential of the authors' AlGaAs/GaAs quantum well FETs with a gate length of 0.3 μm. The best multiplication time measured was 7.2 ns
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