Additivity of Capacitive and Inductive Coupling in Submicronic Interconnects

International audienceConstant evolution in integrated circuit technology has led to an increase in the switching speed of the digital chip. As a result, there is a growing interest in the inductance associated with signal lines. Inductive coupling effects on interconnects is an emerging concern in high performance digital integrated circuits. Based on an RLC transmission line model, associated to each propagation mode, a new crosstalk noise model is proposed to evaluate both the capacitive and the inductive coupling. The additivity of the coupling is shown and validated with several simulations

Méthode d'extraction fréquentielle de l'inductance de boucle pour la modélisation large bande des interconnexions de circuits numériques

4 pagesNational audienceDans le contexte des interconnexions de circuits numériques avancés, la modélisation de type RC actuelle n'est plus suffisamment précise face à l'augmentation des fréquences d'horloge, notamment en ce qui concerne les niveaux globaux. Les effets inductifs sont donc à prendre en compte et le concept de l'inductance de boucle semble être une solution intéressante pour ne pas complexifier de façon excessive les modèles. Nous décrivons dans ce papier une méthode d'extraction fréquentielle de l'inductance de boucle permettant de prendre en compte les effets de proximité dus à l'augmentation de la fréquence. Nous proposons, de plus, un modèle compact que nous validons par une analyse temporelle

Simulation, Measurement and Modeling of Orthogonal On-Chip Interconnects

International audienceThis paper explains the appearance of resonant frequency due to underlayer orthogonal metal grid in microstrip line structures. In the context of global interconnects, this resonant frequency may lead to noise and has to be estimate. A model, which allows one to approximate this resonant frequency, is validated by measurement

Frequency domain analysis of transmission zeroes on high-speed interconnects in the presence of an orthogonal metal grid underlayer

4 p.International audienceThis paper addresses high-speed interconnects in high density systems (Systems on Chip (SoC) in package (SiP) ...). These lines (of miscostrip or coplanar type) often have an underlayer of orthogonal metal grids which can affect transmission characteristics. We subsequently present a characterization through S-parameter measurements and electromagnetic simulations. Two kinds of grid are studied; grounded (CC) and floating grid (CO). In both cases, transmission zeroes appear. The position of these transmission zeroes in the frequency domain depends mainly on the grid length and, of course, on the grid charge CC or CO. In order to easily estimate it, we propose a simple equivalent circuit model which we validate by measurements and electromagnetic simulations. We then determine a set of expressions based on this model enabling us to analytically pinpoint the location transmission zero in the frequency domain, valid for any underlayer of orthogonal metal lines or grids

KTa0.6Nb0.4O3 Ferroelectric Thin Film Behavior at Microwave Frequencies for Tunable Applications

"©20xx IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE."International audienceIn this study about the relationships between structural and microwave electrical properties of KTa1-xNbxO3 (KTN) ferroelectric materials, a KTN thin film was deposited on different substrates to investigate how KTN growth affects the microwave behavior. Interdigital capacitors and stubs were made on these films through a simple engraving process. Microwave measurements under a static electric field showed the importance of the substrate on the circuit behavior and, notably, on the tuning factor

INTRUSION OF RECENT AIR IN POLAR STRATOSPHERE DURING SUMMER 2009 REVEALED BY BALLOON-BORNE IN SITU CO MEASUREMENTS

International audienceThe SPIRALE (Spectroscopie Infa-Rouge par Absorption de Lasers Embarqués) balloon-borne instrument has been launched twice within 17 days in the polar region (Kiruna, Sweden, 67.9°N-21.1°E) during summer, at the beginning and at the end of August 2009. In situ measurements of several trace gases have been performed including CO and O 3 between 10 and 34 km height, with very high vertical resolution (~5 m). The both flight results are compared and the CO stratospheric profile of the first flight presents specific structures associated with mid-latitude intrusion in the lowest stratospheric levels. Their interpretation is made with the help of results from several modeling tools (MIMOSA and FLEXTRA) and available satellite data (IASI). We also used the O 3 profile correlated with CO to calculate the proportion of recent air in the polar stratosphere. The results indicate the impact of East Asia urban pollution on the chemistry of polar stratosphere in summer

Pulsed laser deposited KNbO3_3 thin films for applications in high frequency range

Potassium niobate thin films were grown by pulsed laser deposition on various substrates. Influence of deposition conditions on film characteristics was studied. Structural investigation evidenced that single phase polycrystalline randomly oriented films were grown on sintered alumina whereas epitaxial films were grown on (100)SrTiO$_3$ and (100)MgO substrates. The microstructure was highly controlled by the structural characteristics. Interdigited capacitors built from KNbO3 films on two different substrates (alumina and MgO) showed the strong influence of the structural characteristics on the dielectric behavior. The variation of the equivalent capacitance measured on the interdigital capacitor on MgO was 6.4% at 2.5 GHz while it was 1.5% on alumina, in both cases for a moderate applied field of $\sim$15 kV cm$^{-1}$. The results show the potentiality of these ferroelectric materials for use in frequency agile microwave electronics

Nouvelles interconnexions globales à haut débit pour la réalisation de microsystèmes communicants de type SIP.

4 pagesNational audienceLes microsystèmes intégrés sur puces (SoC) ou en boîtier (SiP) sont actuellement en plein essor et nécessitent le développement de nouvelles structures d'interconnexions reliant les différents blocs fonctionnels entre eux. Nous proposons dans ce papier l'étude du concept d'interconnexion RF par couplage capacitif qui est une solution intéressante pour remplacer les interconnexions classiques. Dans un premier temps nous décrivons le principe de cette technique et montrons à l'aide de simulations circuits de type ADS, la faisabilité de ce concept. Nous présentons ensuite la caractérisation d'un canal de type microruban, réalisée sous HFSS ainsi que son comportement dans le domaine temporel. I. Introductio

Etude comparative de l'approche dans le domaine spectral et de la methode des equations integrales superieures pour la simulation des lignes planaires en technologie monolithique microonde

SIGLEAvailable from INIST (FR), Document Supply Service, under shelf-number : T 81333 / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc

Etude et conception de systèmes de communication adaptatifs à base de MEMS aux longueurs d'ondes millimétriques

Ce travail porte sur l'étude et la conception de dispositifs micro-ondes agiles pour les systèmes de télécommunications en utilisant les MEMS. Cette technologie n'est pas encore arrivé à maturité, mais elle offre déjà de très bonnes performances. Nous avons débuter par l'étude des filtres agiles. Après la réalisation d'un filtre bas sur une topologie classique, la topologie DBR (Dual Behavior Resonator) nous a permis de contrôler indépendamment et simultanément la fréquence centrale et la bande passante de notre filtre. Un filtre DBR a accord continu puis deux autres à variations discrètes ont été développés. Afin d'améliorer kes performance de ces deux dernières, nous les avons associées à des fonctions spécifiques de filtrage. Nous avons aussi élaboré une antenne à diversité de polarisation en associant un coupleur hybride à deux antennes fentes en réseau. En modifiant le déphasage en sortie du coupleur, nous changeons le sens de la polarisation circulaire de gauche à droite.This research work was aimed at designing reconfigurable microwave components for telecommunication systems by using MEMS. Even though this technology has not yet reached its full development, it already provides devices with really good performances. The first step consisted in investigations about reconfigurable filters. We first designed a switchable filter based on classical topology. Then, we used an original topology termed Dual Behavior Resonator (DBR), to independently and simultaneously control the central frequency and the bandwidth of our filter. We developed a tunable DBR filter ans two switchable one. The performances of the last two filters were improved by associating specific filtering functions with them. Finally, we designed a polarisation diversity antenna. Such a device results from the association of a two slot antennas network with a branch-line hybrid coupler. A phase shift at the end of the coupler allows switching the right and left polarisations.BREST-BU Droit-Sciences-Sports (290192103) / SudocSudocFranceF