GaAs transistors formed by Be or Mg ion implantation

N-p-n transistor structures have been formed in GaAs by implanting n-type substrates with Be ions to form base regions and then implanting them with 20-keV Si ions to form emitters. P-type layers have been produced in GaAs by implantation of either Mg or Be ions, with substrate at room temperature, followed by annealing at higher temperatures

Optical waveguiding in proton-implanted GaAs

We have produced optical waveguides in n-type GaAs by implantation with 300-keV protons. The guiding is shown to be due to the elimination of charge carriers from the implanted region. Annealing of the waveguide leads to very large reductions in the 1.15-µ guided-wave absorption

Development of ion implantation techniques for microelectronics

Ion implantation process for fabricating active devices in high bandgap semiconductor materials for high temperature operatio

Channel Optical Waveguides and Directional Couplers in GaAs -- Imbedded and Ridged

Two-channel imbedded directional couplers were fabricated with proton implantation, yielding complete light transfer in 2 mm. Ridged channel guides were fabricated by ion-micromachining epitaxial layers, and a method of directional coupling was demonstrated

Integrated photonic qubit quantum computing on a superconducting chip

We study a quantum computing system using microwave photons in transmission line resonators on a superconducting chip as qubits. We show that all control necessary for quantum computing can be implemented by coupling to Josephson devices on the same chip, and take advantage of their strong inherent nonlinearities to realize qubit interactions. We analyze the gate error rate to demonstrate that our scheme is realistic even for Josephson devices with limited decoherence times. A conceptually innovative solution based on existing technologies, our scheme provides an integrated and scalable approach to the next key milestone for photonic qubit quantum computing.Comment: 5 pages, 3 figure

The Presence of Deep Levels in Ion Implanted Junctions

It has been found that ion implantation doping results in the generation and diffusion of defect species, forming deep trapping levels. The effect of these levels on the electrical characteristics of zinc‐implanted GaAs diodes has been observed for the case of 70‐kV implantation at 400°C into substrates with n‐type concentrations ranging from 1 × 10^16 to 1.8 × 10^18 atoms/cm^3. Capacitance‐voltage measurements have indicated the presence of a semi‐insulating layer in the diodes, varying in thickness from 0.18 μ for the most heavily doped substrate to 2.7 μ for the lightest. Frequency dependence of the junction capacitance and power law variation of forward current vs voltage have also been observed and are attributed to deep levels

Efficacy of parental use of a tagging procedure to enhance their child\u27s sports performance training

Youth sports have become increasingly popular and competitive, resulting in parents seeking out coaching and training facilities that can improve their children’s sports performance. Tagging offers a promising way to enhance sports training by incorporating immediate audible feedback successfully used in the field of Behavior Analysis that was once reserved only for professional athletes. However, it is unclear whether parents can effectively use a tagging procedure when provided with a breakdown of the specific steps to skills needed (e.g. task analysis) to enhance their child’s training received at a paid training facility. The purpose of this study was to test the efficacy of parents using a tagging procedure to enhance baseball swing mechanics training of youth baseball players

Theory and fabrication of integrated optics directional couplers in GaAs

Channel optical waveguide couplers will be discussed, citing the fabrication of closely-spaced waveguides by proton implantation. Coupling was observed at 1.15μ and 1.06μ