23 research outputs found

    Research on the Leading Value Drive of Rural Homestead Transfer under Rural Revitalization——Based on the Evidences of China

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    With the development of urban-rural integration in China, the functional value of homestead bases has evolved from a single residential security value to a multiple composite values, and the property income of homestead bases has gradually become the value driver of transfer and the intrinsic demand of farm households. This paper takes Baitafan of Jinzhai County, Chongqing City, and Xiaofang Yu Village of Ji County as examples for in-depth discussion, and finds that the dominant value drivers of home base transfer mainly include three kinds: capitalization income, commercialization income, and non-farm employment income. The study concludes that it is important to give full play to the resource endowment effect and identify the dominant value of home base transfer according to local conditions to promote the standardized home base transfer and implement the rural revitalization strategy

    In-Situ Conversion of ZnO/Ni3ZnC0.7/CNT Composite from NiZn Bimetallic MOF Precursor with Enhanced Electromagnetic Property

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    ZnO/Ni3ZnC0.7/x% CNT (x = 0, 2, 5, 10) urchin-like structures have been synthesized using a facile method based on metal-organic frameworks (MOFs) and applied as the electromagnetic absorber. The results of the experiments demonstrate that the content of multi-wall carbon nanotubes (MWCNT) has a great influence on the absorbing performance of the hybrid material. Conduction loss, interfacial polarization and ferromagnetic resonance all contribute to the electromagnetic absorption. The urchin-like ZnO/Ni3ZnC0.7/5% CNT composite presents excellent absorbing properties. When the filler loading of ZnO/Ni3ZnC0.7/5% CNT composite in paraffin matrix is only 10 wt.%, a minimum reflection loss of −33.2 dB is achieved at a layer thickness of 4.9 mm

    Roots Fuel Cell Produces and Stores Clean Energy

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    In recent years, extensive scientific efforts have been conducted to develop clean bioenergy technologies. A promising approach that has been under development for more than a hundred years is the microbial fuel cell (MFC) which utilizes exoelectrogenic bacteria as an electron source in a bioelectrochemical cell. The viability of bacteria in soil MFCs can be maintained by integrating plant roots, which release organic materials that feed the bacteria. In this work, we show that rather than organic compounds, roots also release redox species that can produce electricity in a biofuel cell. We first studied the reduction of the electron acceptor Cytochrome C by green onion roots. We integrate green onion roots into a biofuel cell to produce a continuous bias-free electric current for more than 24 h in the dark. This current is enhanced upon irradiation of the onion’s leaves with light. We apply cyclic voltammetry and 2D-fluorescence measurements to show that NADH and NADPH act as major electron mediators between the roots and the anode, while their concentrations in the external root matrix are increased upon irradiation of the leaves. Finally, we show that roots can contribute to energy storage by charging a supercapacitor

    Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate

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    Heterogeneous integration of materials pave a new way for the development of the microsystem with miniaturization and complex functionalities. Two types of hybrid silicon on insulator (SOI) structures, i.e., Si (100)-on-Si (111) and Si (111)-on-Si (100), were prepared by the smart-cut technique, which is consist of ion-slicing and wafer bonding. The precise calculation of the lattice strain of the transferred films without the epitaxial matching relationship to the substrate was demonstrated based on X-ray diffraction (XRD) measurements. The XRD and Raman measurement results suggest that the transferred films possess single crystalline quality. With a chemical mechanical polishing (CMP) process, the surface roughness of the transferred thin films can be reduced from 5.57 nm to 0.30 nm. The 4-inch GaN thin film epitaxially grown on the as-prepared hybrid SOI of Si (111)-on-Si (100) by metalorganic chemical vapor deposition (MOCVD) is of improved quality with a full width at half maximum (FWHM) of 672.54 arcsec extracted from the XRD rocking curve and small surface roughness of 0.40 nm. The wafer-scale GaN on Si (111)-on-Si (100) can serve as a potential platform for the one chip integration of GaN-based high electron mobility transistors (HEMT) or photonics with the Si (100)-based complementary metal oxide semiconductor (CMOS)
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