Nonlinear magnetotransport shaped by Fermi surface topology and convexity in WTe2

The nature of Fermi surface defines the physical properties of conductors and many physical phenomena can be traced to its shape. Although the recent discovery of a current-dependent nonlinear magnetoresistance in spin-polarized non-magnetic materials has attracted considerable attention in spintronics, correlations between this phenomenon and the underlying fermiology remain unexplored. Here, we report the observation of nonlinear magnetoresistance at room temperature in a semimetal WTe2, with an interesting temperature-driven inversion. Theoretical calculations reproduce the nonlinear transport measurements and allow us to attribute the inversion to temperature-induced changes in Fermi surface convexity. We also report a large anisotropy of nonlinear magnetoresistance in WTe2, due to its low symmetry of Fermi surfaces. The good agreement between experiments and theoretical modeling reveals the critical role of Fermi surface topology and convexity on the nonlinear magneto-response. These results lay a new path to explore ramifications of distinct fermiology for nonlinear transport in condensed-matter

Quantum frequency doubling in the topological insulator Bi2Se3

The nonlinear Hall effect due to Berry curvature dipole (BCD) induces frequency doubling, which was recently observed in time-reversal-invariant materials. Here we report novel electric frequency doubling in the absence of BCD on a surface of the topological insulator Bi2Se3 under zero magnetic field. We observe that the frequency-doubling voltage transverse to the applied ac current shows a threefold rotational symmetry, whereas it forbids BCD. One of the mechanisms compatible with the symmetry is skew scattering, arising from the inherent chirality of the topological surface state. We introduce the Berry curvature triple, a high-order moment of the Berry curvature, to explain skew scattering under the threefold rotational symmetry. Our work paves the way to obtain a giant second-order nonlinear electric effect in high mobility quantum materials, as the skew scattering surpasses other mechanisms in the clean limit

Canted Spin Texture and Quantum Spin Hall Effect in WTe2

We report an unconventional quantum spin Hall phase in the monolayer T$_\text{d}$-WTe$_2$, which exhibits hitherto unknown features in other topological materials. The low-symmetry of the structure induces a canted spin texture in the $yz$ plane, which dictates the spin polarization of topologically protected boundary states. Additionally, the spin Hall conductivity gets quantized ($2e^2/h$) with a spin quantization axis parallel to the canting direction. These findings are based on large-scale quantum simulations of the spin Hall conductivity tensor and nonlocal resistances in multi-probe geometries using a realistic tight-binding model elaborated from first-principle methods. The observation of this canted quantum spin Hall effect, related to the formation of topological edge states with nontrivial spin polarization, demands for specific experimental design and suggests interesting alternatives for manipulating spin information in topological materials.Comment: For comments please contact [email protected]

Charge-to-Spin Interconversion in Low-Symmetry Topological Materials

The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted not in a fundamental constraint but on the specific symmetries of traditionally studied systems. We theoretically show that the reduced symmetry of strong spin-orbit coupling materials such as ${\rm MoTe}_2$ or ${\rm WTe}_2$ enables new forms of intrinsic SHE that produce large and robust in-plane spin polarizations. Through quantum transport calculations on realistic device geometries with disorder, we show that the charge-to-spin interconversion efficiency can reach $\theta_{xy} \approx 80$\% and is gate tunable. The numerically extracted spin diffusion lengths ($\lambda_s$) are long and yield large values of the figure of merit $\lambda_s\theta_{xy}\sim 8\text{--}10$ nm, largely superior to conventional SHE materials. These findings vividly emphasize how crystal symmetry governs the intrinsic SHE, and how it can be exploited to broaden the range and efficiency of spintronic functionalities.Comment: Any comments are appreciated. 6 pages + 4 figures. Supplemental material available upon reques