Emotion and Concentration Integrated System: Applied to the Detection and Analysis of Consumer Preference

With the expansion of consumer market, the appearance becomes an important issue when consumers make decisions under the situation of similar qualities and contents. Accordingly, to attract consumers, companies cost and take much attention on product appearance. Compared to using questionnaires individually, obtaining humans’ thoughts directly from their brains can accurately grasp the actual preference of consumers, which can provide effective and precious decisions for companies. \ In this study, consumers’ brainwaves which are related to concentration and emotion are extracted by wearing a portable and wireless Electroencephalography (EEG) device. The extracted EEG data are then trained by using perceptron learning algorithm (PLA) to make the judgments of concentration and emotion work well with each subject. They are then applied to the detection and analysis of consumer preference. Finally, the questionnaires are also performed and used as the reference on training process. They are integrated with brainwaves data to create one prediction model which can improve the accuracy significantly. The Partial Least Squares is used to compare the correlation between different factors in the model, to ensure the test can accurately meet consumers’ thoughts

Effect of diabetes on mortality and length of hospital stay in patients with renal or perinephric abscess

OBJECTIVES: We compared the risk of in-hospital mortality and the length of hospital stay between diabetic and non-diabetic patients hospitalized for renal or perinephric abscess. METHOD: The data analyzed in this study were retrieved from Taiwan's National Health Insurance claims. The risk of in-hospital mortality and the length of hospital stay were compared between 1,715 diabetic patients, hospitalized because of renal or perinephric abscess in Taiwan between 1997 and 2007, and a random sample of 477 non-diabetes patients with renal or perinephric abscess. RESULTS: The in-hospital mortality rates from renal or perinephric abscess for the diabetic patients and the non-diabetic patients were not different, at 2.3% and 3.4%, respectively. However, diabetes was significantly associated with a longer length of hospital stay among patients with renal abscess, by 3.38 days (95% confidence interval [CI]: 1.59-5.17). CONCLUSIONS: Diabetes does not increase the risk of in-hospital mortality from renal or perinephric abscess. Nevertheless, appropriate management of patients with diabetes and concurrent renal or perinephric abscess is essential to reduce the length of hospital stay

Experimental procedures for precision measurements of the Casimir force with an Atomic Force Microscope

Experimental methods and procedures required for precision measurements of the Casimir force are presented. In particular, the best practices for obtaining stable cantilevers, calibration of the cantilever, correction of thermal and mechanical drift, measuring the contact separation, sphere radius and the roughness are discussed.Comment: 14 pages, 7 figure

Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors

In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Fermi-level (FL) pinning effect, which commonly caused by interfacial gap states, severely limits the tunability of junction characteristics, including barrier height and contact resistance. A tunneling contact scheme has been suggested to address the FL pinning issue in metal-2D-semiconductor junctions, whereas the experimental realization is still elusive. Here, we show that an oxidized-monolayer-enabled tunneling barrier can realize a pronounced FL depinning in indium selenide (InSe) transistors, exhibiting a large pinning factor of 0.5 and a highly modulated Schottky barrier height. The FL depinning can be attributed to the suppression of metal- and disorder-induced gap states as a result of the high-quality tunneling contacts. Structural characterizations indicate uniform and atomically thin surface oxidation layer inherent from nature of van der Waals materials and atomically sharp oxide-2D-semiconductor interfaces. Moreover, by effectively lowering the Schottky barrier height, we achieve an electron mobility of 2160 cm$^2$/Vs and a contact barrier of 65 meV in two-terminal InSe transistors. The realization of strong FL depinning in high-mobility InSe transistors with the oxidized monolayer presents a viable strategy to exploit layered semiconductors in contact engineering for advanced electronics and optoelectronics