On the relation between the Feynman paradox and Aharonov-Bohm effects

The magnetic Aharonov-Bohm (A-B) effect occurs when a point charge interacts with a line of magnetic flux, while its dual, the Aharonov-Casher (A-C) effect, occurs when a magnetic moment interacts with a line of charge. For the two interacting parts of these physical systems, the equations of motion are discussed in this paper. The generally accepted claim is that both parts of these systems do not accelerate, while Boyer has claimed that both parts of these systems do accelerate. Using the Euler-Lagrange equations we predict that in the case of unconstrained motion only one part of each system accelerates, while momentum remains conserved. This prediction requires a time dependent electromagnetic momentum. For our analysis of unconstrained motion the A-B effects are then examples of the Feynman paradox. In the case of constrained motion, the Euler-Lagrange equations give no forces in agreement with the generally accepted analysis. The quantum mechanical A-B and A-C phase shifts are independent of the treatment of constraint. Nevertheless, experimental testing of the above ideas and further understanding of A-B effects which is central to both quantum mechanics and electromagnetism may be possible.Comment: 21 pages, 5 figures, recently submitted to New Journal of Physic

Damp heat stable doped zinc oxide films

Zinc oxide is widely used as transparent contact in thin film solar cells. We investigate the damp heat stability of aluminum doped ZnO (ZnO:Al) films sputter deposited at different conditions. Increase in resistivity upon damp heat exposure was observed for as-deposited ZnO:Al films and the water penetration was directly linked to this degradation. Deuterium was used as isotopic marker to identify the amount of water taken up by the films. Finally, we applied a special annealing step to prepare highly stable ZnO:Al films with charge carrier mobility of 70 cm2/Vs after 1000 h of damp heat treatment. A grain boundary reconstruction model is proposed to explain the high stability of ZnO:Al films after annealing