5 research outputs found
Electronic and magnetic properties of SnO2/CrO2 thin superlattices
In this article, using first-principles electronic structure calculations within the spin density functional theory, alternated magnetic and non-magnetic layers of rutile-CrO2 and rutile-SnO2 respectively, in a (CrO2)n(SnO2)n superlattice (SL) configuration, with n being the number of monolayers which are considered equal to 1, 2, ..., 10 are studied. A half-metallic behavior is observed for the (CrO2)n(SnO2)n SLs for all values of n. The ground state is found to be FM with a magnetic moment of 2 μB per chromium atom, and this result does not depend on the number of monolayers n. As the FM rutile-CrO2 is unstable at ambient temperature, and known to be stabilized when on top of SnO2, the authors suggest that (CrO2)n(SnO2)n SLs may be applied to spintronic technologies since they provide efficient spin-polarized carriers
Revealing the true impact of interstitial and substitutional nitrogen doping in TiO2 on photoelectrochemical applications
Application of photocatalysts that strongly absorb within the visible range is a common strategy to improve the efficiency of photoelectrochemical (PEC) systems; this may translate to high photocurrents, but it is not always the case. Here, we show that nitrogen doping enhances visible light absorption of TiO2; however, it does not necessarily result in improved PEC performance. Depending on the applied external potential, N-doping can improve, or degrade, PEC performance either under water oxidation conditions or via hole scavenging (Na2S/Na2SO3). In this work, we developed a holistic approach to evaluate the true impact of N doping in TiO2 on PEC performance. Interstitial and substitutional N doping are experimentally explored for the first time through a simple and novel PEC approach which complemented X-ray photoelectron analyses. Using this approach, we show that interstitial N doping of anatase TiO2 dominates up to 400 °C and substitutional doping up to ca. 600 °C, without rutile formation. This reveals that the bottleneck for doping higher N-concentrations in TiO2 is the direct transformation to thermodynamically favorable N-rich phases, such as TiN/Ti2N at 700 °C, inhibiting the formation of rutile phase. Transmission electron microscopy revealed that N doping proceeds mainly from the inner to the outer tube walls via nitridation and follows a preferential pathway from interstitial to substitutional doping. Direct PEC experimental evidence on visible light activation of N doped TiO2, and the location of interband states, showed acceptor levels of 1.0 eV for substitutional and 0.7 eV for interstitial doping above the TiO2 valence band maximum. In addition, due to O vacancies and Ti3+ species, donor levels below the conduction band minimum were also created. These levels act as trapping/recombination centers for charge carriers and, therefore, the gain in the visible range due to N doping does not translate to an improved PEC performance by these structural defects. Ultimately, we show that whilst there is a benefit of visible light absorption through N doping in TiO2, the PEC performance of the samples only surpasses pristine TiO2 at relatively high biasing (>0.3 V vs. Ag/AgCl)
Theoretical study of the influence of vacancies in the magnetic stability of V-, Cr-, and Mn-doped SnO2
In this work we study, theoretically, the magnetic properties of transition metals (TMs)-doped SnO2 (with TM = V, Cr, and Mn) in a diluted magnetic oxide configuration, focusing in particular in the role played by the presence of O vacancies, VO, nearby the TM. We present the results of first-principles electronic structure calculations of Sn0.96TM0.04O2 and Sn0.96TM0.04O1.98(VO)0.02 alloys. The calculated total energy as a function of the total magnetic moment per cell shows a magnetic metastability, corresponding to a high-spin (HS) ground state, respectively, with 2 and 3 μB/cell, for Cr and Mn, and a metastable low-spin (LS) state, with 0 (Cr) and 1 (Mn) μB/cell. For vanadium, only a state with 1 μB/cell was found. The spin-crossover energy (ESCO) from the LS to the HS is 114 meV for Cr and 42 meV for Mn. By creating O vacancies close to the TM site, we show that the metastability and ESCO change. For chromium, a new HS state appears (4 μB/cell), with an energy barrier of 32 meV relative to the 2 μB/cell state. For manganese, the metastable LS state of 1 μB/cell disappears, while for vanadium the HS state of 1 μB/cell remains. In all cases, the ground state corresponds to the expected HS. These findings suggest that these materials may be used in applications that require different magnetization states