Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1–x alloys

The nitrogen bonding configurations in GaNxAs1–x alloys grown by molecular beam epitaxy with 0.07=0.03, the nitrogen is found to exist in a single bonding configuration – the Ga–N bond; no interstitial nitrogen complexes are present. The amount of nitrogen in the alloys is estimated from the XPS using the N 1s photoelectron and Ga LMM Auger lines and is found to be in agreement with the composition determined by x-ray diffraction

Voltage controlled nuclear polarization switching in a single InGaAs quantum dot

Sharp threshold-like transitions between two stable nuclear spin polarizations are observed in optically pumped individual InGaAs self-assembled quantum dots embedded in a Schottky diode when the bias applied to the diode is tuned. The abrupt transitions lead to the switching of the Overhauser field in the dot by up to 3 Tesla. The bias-dependent photoluminescence measurements reveal the importance of the electron-tunneling-assisted nuclear spin pumping. We also find evidence for the resonant LO-phonon-mediated electron co-tunneling, the effect controlled by the applied bias and leading to the reduction of the nuclear spin pumping rate.Comment: 5 pages, 2 figures, submitted to Phys Rev

Microcavity quantum-dot systems for non-equilibrium Bose-Einstein condensation

We review the practical conditions required to achieve a non-equilibrium BEC driven by quantum dynamics in a system comprising a microcavity field mode and a distribution of localised two-level systems driven to a step-like population inversion profile. A candidate system based on eight 3.8nm layers of In(0.23)Ga(0.77)As in GaAs shows promising characteristics with regard to the total dipole strength which can be coupled to the field mode.Comment: 4 pages, 4 figures, to be published in J. Phys. Conf. Ser. for QD201

Customised Alloy Blends for In-Situ Al339 Alloy Formation Using Anchorless Selective Laser Melting

The additive manufacturing process Selective Laser Melting (SLM) can generate large thermal gradients during the processing of metallic powder; this can in turn lead to increased residual stress formation within a component. Metal anchors or support structures are required to be built during the process and forcibly hold SLM components to a substrate plate and minimise geometric distortion/warpage due to the process induced thermal residual stress. The requirement for support structures can limit the geometric freedom of the SLM process and increase post-processing operations. A novel method known as Anchorless Selective Laser Melting (ASLM) maintains processed material within a stress relieved state throughout the duration of a build. As a result, metal components formed using ASLM do not develop signification residual stresses within the process, thus, the conventional support structures or anchors used are not required to prevent geometric distortion. ASLM locally melts two or more compositionally distinct powdered materials that alloy under the action of the laser, forming into various combinations of hypo/hyper eutectic alloys with a new reduced solidification temperature. This new alloy is maintained in a semi-solid or stress reduced state for a prolonged period during the build with the assistance of elevated powder bed pre-heating. In this paper, custom blends of alloys are designed, manufactured and processed using ASLM. The purpose of this work is to create an Al339 alloy from compositionally distinct powder blends. The in-situ alloying of this material and ASLM processing conditions allowed components to be built in a stress-relieved state, enabling the manufacture of overhanging and unsupported features

Quantum state preparation in semiconductor dots by adiabatic rapid passage

Preparation of a specific quantum state is a required step for a variety of proposed practical uses of quantum dynamics. We report an experimental demonstration of optical quantum state preparation in a semiconductor quantum dot with electrical readout, which contrasts with earlier work based on Rabi flopping in that the method is robust with respect to variation in the optical coupling. We use adiabatic rapid passage, which is capable of inverting single dots to a specified upper level. We demonstrate that when the pulse power exceeds a threshold for inversion, the final state is independent of power. This provides a new tool for preparing quantum states in semiconductor dots and has a wide range of potential uses.Comment: 4 pages, 4 figure

Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys

Photoluminescence (PL) has been observed from dilute InNxAs1–x epilayers grown by molecular-beam epitaxy. The PL spectra unambiguously show band gap reduction with increasing N content. The variation of the PL spectra with temperature is indicative of carrier detrapping from localized to extended states as the temperature is increased. The redshift of the free exciton PL peak with increasing N content and temperature is reproduced by the band anticrossing model, implemented via a (5×5) k·p Hamiltonian

Chronic administration of Glucagon-like peptide-1 receptor agonists improves trabecular bone mass and architecture in ovariectomised mice

Some anti-diabetic therapies can have adverse effects on bone health and increase fracture risk. In this study, we tested the skeletal effects of chronic administration of two Glucagon-like peptide-1 receptor agonists (GLP-1RA), increasingly used for type 2 diabetes treatment, in a model of osteoporosis associated bone loss and examined the expression and activation of GLP-1R in bone cells. Mice were ovariectomised (OVX) to induce bone loss and four weeks later they were treated with Liraglutide (LIR) 0.3 mg/kg/day, Exenatide (Ex-4) 10 μg/kg/day or saline for four weeks. Mice were injected with calcein and alizarin red prior to euthanasia, to label bone-mineralising surfaces. Tibial micro-architecture was determined by micro-CT and bone formation and resorption parameters measured by histomorphometric analysis. Serum was collected to measure calcitonin and sclerostin levels, inhibitors of bone resorption and formation, respectively. GLP-1R mRNA and protein expression were evaluated in the bone, bone marrow and bone cells using RT-PCR and immunohistochemistry. Primary osteoclasts and osteoblasts were cultured to evaluate the effect of GLP-1RA on bone resorption and formation in vitro. GLP-1RA significantly increased trabecular bone mass, connectivity and structure parameters but had no effect on cortical bone. There was no effect of GLP-1RA on bone formation in vivo but an increase in osteoclast number and osteoclast surfaces was observed with Ex-4. GLP-1R was expressed in bone marrow cells, primary osteoclasts and osteoblasts and in late osteocytic cell line. Both Ex-4 and LIR stimulated osteoclastic differentiation in vitro but slightly reduced the area resorbed per osteoclast. They had no effect on bone nodule formation in vitro. Serum calcitonin levels were increased and sclerostin levels decreased by Ex-4 but not by LIR. Thus, GLP-1RA can have beneficial effects on bone and the expression of GLP-1R in bone cells may imply that these effects are exerted directly on the tissue

Photonic integration of uniform GaAs nanowires in hexagonal and honeycomb lattice for broadband optical absorption

We present an experimental approach toward the realization of GaAs nanowires in the form of square, hexagonal, and honeycomb lattices for photonic integration toward enhanced optical properties. We have carried out a design and fabrication process on GaAs wafers using electron beam lithography patterning, reactive ion etching for hard mask removal, and inductively coupled plasma etching of the material. The resulting photonic crystals are analyzed by field emission scanning electron microscopy. Nanowire array designs in a square, hexagonal, and honeycomb lattice with a variable height of nanowires have been studied. Using finite-difference time-domain simulation, we can derive the comparative optical absorption properties of these nanowire arrays. A very high broadband absorbance of >94% over the 400 nm–1000 nm wavelength range is studied for hexagonal and honeycomb arrays, while a square lattice array shows only a maximum of 85% absorption. We report a minimum of 2% reflectance, or 98% optical absorbance, over 450 nm–700 nm and over a wide angle of 45° through hexagonal and honeycomb lattice integration in GaAs. These results will have potential applications toward broadband optical absorption or light trapping in solar energy harvesting

Current understanding of the mechanisms for clearance of apoptotic cells-a fine balance

Apoptosis is an important cell death mechanism by which multicellular organisms remove unwanted cells. It culminates in a rapid, controlled removal of cell corpses by neighboring or recruited viable cells. Whilst many of the molecular mechanisms that mediate corpse clearance are components of the innate immune system, clearance of apoptotic cells is an anti-inflammatory process. Control of cell death is dependent on competing pro-apoptotic and anti-apoptotic signals. Evidence now suggests a similar balance of competing signals is central to the effective removal of cells, through so called 'eat me' and 'don't eat me' signals. Competing signals are also important for the controlled recruitment of phagocytes to sites of cell death. Consequently recruitment of phagocytes to and from sites of cell death can underlie the resolution or inappropriate propagation of cell death and inflammation. This article highlights our understanding of mechanisms mediating clearance of dying cells and discusses those mechanisms controlling phagocyte migration and how inappropriate control may promote important pathologies. © the authors, publisher and licensee libertas academica limited

Mortality and Morbidity Following Endovascular Repair of Abdominal Aortic Aneurysms: Analysis of Two Single Centre Experiences

AbstractObjective to show how differences in anatomical and physiological risk factors can affect the outcome of endovascular repair of AAA by describing the experience of two centres with different selection policies. Methods one hundred and thirty-five patients (group I) were treated at Queen's Medical Centre (Nottingham, U.K.) using 101 in-house made and 34 manufactured stent-grafts. Median diameter, length and angulation of the proximal aneurysm neck were 26 mm, 27 mm, 40°, respectively. Seventy-six patients had ischaemic heart disease, 47 had left ventricular failure, median forced expiratory volume in one second (FEV1) was 83%, median creatinine was 100 μmol/l and median age was 72 years. Fifty patients (group II) were treated at Timone Hospital (Marseilles, France) using seven in-house made and 43 manufactured stent-grafts. Median diameter, length and angulation of the proximal aneurysm neck were 25 mm, 34 mm, 33°, respectively. Thirteen patients had ischaemic heart disease, two had left ventricular failure, median forced expiratory volume in one second was 101%, median creatinine was 108 μmol/l and mean age was 72 years. Results anatomical characteristics of the proximal neck were significantly worse in group I (p=0.02 for the three variables). Cardiac comorbidities were more frequent and mean FEV1 was lower in group I (p<0.0001 and p=0.001, respectively. Median aneurysm diameter was significantly greater in group I (65 mm) than in group II (53 mm) (p<0.001). Postoperative mortality was 9% and 0% in groups I and II respectively (p=0.03). The incidence of technical complications (groin wound complications and side branches endoleaks being excluded) was 20% and 0% in groups I and II, respectively (p=0.0006). Conclusion postoperative mortality and technical complication rates were significantly greater in group I than in group II, readily explained by poorer general condition and worse anatomical characteristics of the proximal neck in group I