60 research outputs found

    Integrating sphere charge coupled device-based measurement method for organic light-emitting devices

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    An integrating sphere charge coupled device (CCD)-based measurement system has been developed to accurately characterize the optoelectronic performance of organic polymer light-emitting devices (PLEDs). By theoretically analyzing a previously developed lens-coupled method and comparing it with the integrating sphere CCD-based method, we have found that the integrating sphere-based measurement method provides more stable reliable optical data in comparison with the lens-coupled measurement method. In addition, we demonstrate that inappropriate calibration of the PLED measurement system can greatly exaggerate device performance. © 2003 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/71158/2/RSINAK-74-7-3572-1.pd

    4.5: 200 dpi 4‐a‐Si:H TFTs Current‐Driven AM‐PLEDs

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    In this paper, for the first time, we report 200 dpi current‐driven active‐matrix organic polymer light‐emitting displays based on five‐terminal, four amorphous silicon thin‐film transistors TFTs pixel electrode circuits, which compensate for the threshold voltage shift of organic polymer light‐emitting devices and TFTs.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/92048/1/1.1832197.pd

    Optoelectrical properties of four amorphous silicon thin-film transistors 200 dpi active-matrix organic polymer light-emitting display

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    We report on opto-electrical properties of a current-driven 200 dpi active-matrix organic polymer red light-emitting display (AM–PLED) based on four hydrogenated amorphous silicon thin-film transistor pixel electrode circuits. The AM–PLED luminance and effective light-emission efficiency were 30 cd/m230cd/m2 and 0.3 cd/A, respectively, at the data current equal to 25 mA. The display electroluminescent spectrum has a peak located at and the full width at half maximum value of 644 and 95 nm, respectively, and Commission Internationale de l’Eclairage color coordinates of (0.66,0.33). © 2003 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70464/2/APPLAB-83-16-3233-1.pd

    Effects of lithium doping and ultraviolet photo-patterning on electrical properties of InGaZnO thin film transistors

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    Alkali metals, such as Li and Na, have been added in solution-processed oxide thin-film transistors (TFTs) because they improved electrical characteristics of the oxide TFTs. In previous research, however, fine-patterning of the alkali metal-doped oxide layers was not performed due to potential performance degradation during photolithography process. In this work, we demonstrate ultraviolet (UV) photo-patterned solution-processed indium gallium zinc oxide (IGZO) TFTs containing various amount of lithium (Li). For patterning of active layer, we applied deep UV (184 nm, 10% and 254 nm, 90%) photo-patterning process. We also investigated the chemical composition and bonding structures of the Li doped IGZO (Li-IGZO) films. It was found that appropriate Li doping on IGZO films can reduce oxygen vacancies and improved the coordination of the metal-oxygen bonding. In addition, Li-IGZO TFTs showed improved mobility and bias stability compared to un-doped counterparts. We believe that this simple patterning process and Li doping can be applied to other types of the high-performance solution-processed oxide TFTs.N

    Distortion-Free Stretchable Light-Emitting Diodes via Imperceptible Microwrinkles

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    Stretchable organic light-emitting diodes (OLEDs) have been considered as a promising technology for next-generation free-form and wearable displays. However, an approach to ensure both high device performance and high resolution has not yet been suggested. While introducing a wrinkled structure in the active pixel areas is a decent method, the formation of out-of-plane macroscopic wrinkles having a wavelength of a few hundred mu m has caused distortion in the shape of the pixel, which is a critical drawback for a matrix-configured display demanding a sharp pixel definition. Herein, microwrinkled OLEDs are fabricated to define a distortion-free pixel by direct deposition of OLEDs on biaxially prestretched elastomeric substrate, being feasible by a low-temperature-based solution process. The total thickness of the device can be significantly reduced up to 350 nm, producing the imperceptible microwrinkles having a wavelength under 20 mu m. The microwrinkled OLEDs show a luminance over 8000 cd m(-2) and maximum current efficiency of 7.76 cd A(-1), which is comparable to the device without wrinkled structure. Finally, a stretchable 4 x 4 OLED pixel array with a microwrinkled structure is demonstrated showing sharply defined square-patterned emission, proving the potential in the future high-resolution stretchable display.N

    Selective crack formation on stretchable silver nano-particle based thin films for customized and integrated strain-sensing system

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    Wrinkle structure effectively suppresses the crack formation in a material under tensile strain, thus enabling intrinsically brittle material to be strain-tolerant. If the brittle nature of the material can be selectively engineered on the wrinkle structure, combination of mechanically different structures can be obtained within the same material. In this work, we introduce a simple and facile approach to effectively turn strain-tolerant conductive metal thin film with wrinkle structure into crack-rich thin film. The intended phenomenon was controlled by additionally inkjet-printing Ag thin film onto the wrinkle structure, and the structure and performance were also systematically optimized to enhance sensitivity and stability of the sensor. Our strategy to induce intended cracks on corrugated metal thin film enables not only to stably combine stretchable interconnectors and strain sensors but also to fabricate an integrated strain sensor system that can be custom-tailored to the subject's hand size. We believe the facile strategy will be a good step to realize an integrated strain sensor system.N

    Substrate thermal conductivity effect on heat dissipation and lifetime improvement of organic light-emitting diodes

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    We report substrate thermal conductivity effect on heat dissipation and lifetime improvement of organic light-emitting diodes (OLEDs). Heat dissipation behavior of top-emission OLEDs fabricated on silicon, glass, and planarized stainless steel substrates was measured by using an infrared camera. Peak temperature measured from the backside of each substrate was saturated to be 21.4, 64.5, and 40.5 °C, 180 s after the OLED was operated at luminance of 10 000 cd/m2 and 80% luminance lifetime was about 198, 31, and 96 h, respectively. Efficient heat dissipation through the highly thermally conductive substrates reduced temperature increase, resulting in much improved OLED lifetime.This work supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (Grant No. KRF-2008-331-D00216)
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