Dielectric anisotropy and phonon modes of ordered indirect-gap Al\u3csub\u3e0.52\u3c/sub\u3eIn\u3csub\u3e0.48\u3c/sub\u3eP studied by far-infrared ellipsometry

The infrared (100–600 cm−1) optical properties of partially CuPt-type ordered Al0.52In0.48P deposited lattice matched on GaAs are studied by ellipsometry. The authors determine the ordinary and extraordinary dielectric functions and report on the evolution of the optical phonon mode frequencies of Al0.52In0.48P as a function of the degree of ordering. In addition to the InP- and AlP-like phonon modes, they observe two alloy-induced phonon modes which are anisotropic upon CuPt ordering. The observed modes are associated to vibrations with E and A1 symmetries. The alloy-induced phonon modes are useful for classifying the degree of ordering in this indirect band gap alloy

TERAHERTZ RESONATOR

A tunable terahertz resonator includes a semiconductor Substrate and a metal layer contacting a surface of the semiconductor substrate. A depletion layer is formed in the semiconductor substrate near an interface between the metal layer and the semiconductor Substrate. A chiral nanostructure is coupled to the substrate or the metal layer, the chiral nanostructure including a conducting or semiconducting material and having an inductance. A bias circuit applies a bias Voltage across the metal layer and the semiconductor Substrate to control a capacitance of a tunable capacitor that includes the depletion layer. The chiral nanostructure and the tunable capacitor form a tunable resonant circuit. The tunable terahertz resonator can be used in a terahertz radiation emitter or receiver

POLARIZATION-COUPLED FERROELECTRIC UNPOLARUNCTION MEMORY AND ENERGY STORAGE DEVICE

A memory device is provided. The memory device includes a plurality of memory cells and a controller to write data to and read data from the memory cells. Each memory cell includes a first semiconductor material having a spontaneous polarization, a resistive ferroelectric material having a switchable spontaneous polarization, and a second semiconductor material having a spontaneous polarization, the resistive ferroelectric material being positioned between and in contact with the first and second semiconductor materials. The memory device can be configured to store energy that can be released by applying a voltage pulse to the memory device

Infrared Dielectric Anisotropy and Phonon Modes of Rutile TiO2

Spectroscopic ellipsometry in the mid-infrared and far-infrared spectral range and generalized ellipsometry in the mid-infrared spectral range are used to investigate the anisotropic dielectric response of rutile TiO2. The ordinary and extraordinary dielectric function tensor components and all infrared active phonon mode parameters of single crystalline rutile TiO2 are determined with high accuracy for wavelengths from 3 μm to 83 μm. The data were acquired from samples of (001), (100), and (111) surfaces cut from bulk single crystals. A factorized model dielectric function is employed in order to determine the frequencies and damping parameters of the transverse and longitudinal phonon modes with A2u and Eu symmetries. The bands of total reflection of s- and p-polarized light in dependence of the angle of incidence for highly symmetric sample cuts and orientations are derived. Excellent agreement with phonon modes reported in literature is obtained. Introduction of two additional modes for ordinary as well as extraordinary component of the dielectric function tensor was necessary to most accurately match the experimental data. The spectral position of the additional modes is compared to the calculated phonon density of states. The low-frequency dielectric constants are calculated from the determined phonon mode parameters and the high-frequency dielectric constants by applying the Lyddanne-Sachs-Teller relation. The presented data revise existing infrared optical function data and will be suitable for interpretation of any kind of infrared spectra for bulk TiO2 single crystal substrates, thin films, and TiO2 nanostructures

COMBINED USE OF OSCILLATING MEANS AND ELLIPSOMETRY TO DETERMINE UNCORRELATED EFFECTIVE THICKNESS AND OPTICAL CONSTANTS OF MATERIAL DEPOSITED AT OR ETCHED FROM A WORKING ELECTRODE THAT PREFERRABLY COMPRISES NON - NORMAL ORIENTED NANOFIBERS

Disclosed are systems and methods that enable determination of uncorrelated thickness of a working electrode and surface region optical constants in settings involving electrochemical processing at a working electrodes in a Piezo electric Balance system , by simultaneous application of an Ellipsometer system , the working electrode optionally having a multiplicity of nanofibers that are oriented non normally to a surface of said working electrode . Further disclosed is , simultaneous with said determinations , the monitoring of electrochemical processes at a piezoelectric balance working electrode driven by electrical energy applied between said working electrode and counter electrode