Optimization of absorber/buffer layer/window layer interfaces in Cu(In,Ga)Se2-based solar cells

Le remplacement du CdS dans les cellules solaires à base de Cu(In,Ga)Se2 est un des défis majeurs de la communauté. À ce jour un des matériaux les plus prometteurs est le Zn(S,O,OH) déposée par voie chimique en solution. En raison de la faible vitesse de dépôt du matériau et des phénomènes de métastabilités présents dans les dispositifs formés, il apparaît nécessaire d’optimiser les conditions expérimentales et les interfaces. La 1ère partie de ces travaux a été consacré à l’optimisation des conditions de dépôt des couches minces de Zn(S,O,OH) grâce à l’introduction d’additifs. Il a été possible de souligner l’effet des additifs sur la composition des couches déposées et sur les vitesses de réaction. La 2ème partie de ces travaux a été consacrée à l’optimisation des conditions de dépôt par pulvérisation cathodique de la fenêtre avant (Zn,Mg)O/ZnO :Al permettant une diminution des phénomènes de métastabilité et une limitation de la migration de sodium jusqu’au Zn(S,O,OH). Ces conditions combinées à une variation de la composition de la surface du CIGSe a permis d’obtenir des rendements de photo-conversion supérieurs à ceux des références à base de CdS.The replacement of CdS-based buffer layer in Cu(In,Ga)Se2 solar cells has been one of the main challenges of the research community for the last decade. Today, one of the most promising alternative material is the chemically bath deposited Zn(S,O,OH). Because of its low deposition rate and of metastable behavior, it becomes necessary to proceed to an optimization of experimental conditions and of the various interfaces. The first part of this work has been dedicated to the optimization of the deposition bath thanks to the introduction of new additives. It has been possible to underline the additive effects on both the deposition rate and on the chemical composition of the deposited layers. The second part of this work has been dedicated to the optimization of the (Zn,Mg)O/ZnO:Al window layer. Thanks to an improvement of the sputtering conditions, it has been possible to reduce metastability of the solar cells, and to limit sodium migration up to the Zn(S,O,OH) layer. These optimized conditions combined to the variation of the CIGSe surface composition have allowed us to outperform CdS-based references solar cells

Optical and recombination properties of dislocations in cast-mono silicon from short wave infrared luminescence imaging

International audienc

Development of an organic mixed tin-lead bromide rich perovskite for tandem application

International audienc

Development of an organic mixed tin-lead bromide rich perovskite for tandem application

International audienc

Development of an organic mixed tin-lead bromide rich perovskite for tandem application

International audienc

Use of a New Organic Complexing and Buffer Agent for Zn(S,O) Deposition for High-Efficiency Cu(In,Ga)Se 2 -Based Solar Cells

International audienc

A better understanding of Cbd-Zn(S,O) using hydrogen peroxide as an additive

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INORGANIC-ORGANIC HYBRID ENCAPSULATION OF FLEXIBLE CU(IN, GA)SE2 MINI-MODULES

International audienceAn effective encapsulation solution is required to achieve market entry for flexible Cu(In,Ga)Se2 (CIGS) technology. In this work, we demonstrate the concept of inorganic-organic hybrid encapsulation by encapsulating 3×10 cm² CIGS/polyimide mini-modules with 25 nm Al2O3 barrier layer grown by atomic layer deposition (ALD) in combination with back and front sheets. All mini-modules were encapsulated with a back sheet from Lenzing Plastics, while two different commercial front sheets from Feron and 3M were tested. When exposed to damp heat test, due to the presence of front encapsulation (ALD-Al2O3 and front sheet), the moisture ingress is slowed down during the first 150 h, but progressively penetrates into modules upon increasing exposure time, degrading mainly Isc. The moisture ingress imposes stringent requirements in front encapsulation of flexible CIGS/polyimide mini-modules. Studies in employing thicker ALD-Al2O3 barrier layers and/or better H2O-resistant front sheets will be carried out in the future

Study of Cu(In,Ga)Se 2 Thin Film Growth at Low Temperature on Polyimide Substrate in a Multistage Coevaporation Process for Photovoltaic Applications

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Fast Chemical Bath Deposition Process at Room Temperature of ZnS-Based Materials for Buffer Application in High-Efficiency Cu(In,Ga)Se 2 -Based Solar Cells

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