Supermagnetosonic jets behind a collisionless quasi-parallel shock

The downstream region of a collisionless quasi-parallel shock is structured containing bulk flows with high kinetic energy density from a previously unidentified source. We present Cluster multi-spacecraft measurements of this type of supermagnetosonic jet as well as of a weak secondary shock front within the sheath, that allow us to propose the following generation mechanism for the jets: The local curvature variations inherent to quasi-parallel shocks can create fast, deflected jets accompanied by density variations in the downstream region. If the speed of the jet is super(magneto)sonic in the reference frame of the obstacle, a second shock front forms in the sheath closer to the obstacle. Our results can be applied to collisionless quasi-parallel shocks in many plasma environments.Comment: accepted to Phys. Rev. Lett. (Nov 5, 2009

In Situ Observations of a Magnetosheath High-Speed Jet Triggering Magnetopause Reconnection

Magnetosheath high‐speed jets—localized dynamic pressure enhancements typically of ∼1 Earth radius in size—impact the dayside magnetopause several times per hour. Here we present the first in situ measurements suggesting that such an impact triggered magnetopause reconnection. We use observations from the five Time History of Events and Macroscale Interactions during Substorms spacecraft in a string‐of‐pearls configuration on 7 August 2007. The spacecraft recorded magnetopause in‐and‐out motion during an impact of a magnetosheath jet (VN∼−300 km/s along the magnetopause normal direction). There was no evidence for reconnection for the preimpact crossing, yet three probes observed reconnection after the impact. We infer that the jet impact compressed the originally thick (60–70 di), high magnetic shear (140–160° magnetopause until it was thin enough for reconnection to occur. Magnetosheath high‐speed jets could therefore act as a driver for bursty dayside reconnection

High-frequency operation of 0.3 {mu}m GaAs JFETs for low-power electronic

GaAs Junction Field Effect Transistors (JFETs) have attracted renewed attention for low-power, low-voltage electronics. JFETs have a significant advantage over MESFETs for low-power operation due to their higher gate barrier to current flow resulting from p/n junction gate. This paper reports recent advances in an all ion implanted self-aligned GaAs JFET with a gate length down to 0.3 {mu}m. By employing shallopw SiF implants next to the gate, dielectric sidewall spacers, and 50 keV source and drain implants, JFETs with a f{sub t} up to 49 GHz with good pinchoff and subthreshold characteristics have been realized. In addition, the JFET benefits from the use of shallow Zn or Cd implantation to form abrupt p{sup +}/n gate profiles

Effect of High-Voltage Heterojunction Bipolar Transistor Collector Design on f(T) and f(MAX)

High-speed InGaP/GaAs heterojunction bipolar transistors (HBTs) for high-voltage circuit applications have been investigated. In order to obtain ideal IV characteristics, a lightly doped (N{sub DC} = 7.5 x 10{sup 15} cm{sup {minus}3}) thick (W{sub C} = 3.5 {micro}m) layer of GaAs was used as the collector layer. The devices fabricated have shown breakdown voltage exceeding 65 V. Device operated at up to a 60V bias, which is the highest operating voltage reported up to date for single heterojunction HBTs. Peak {line_integral}{sub T} and {line_integral}{sub MAX} values of 18 GHz and 29 GHz, respectively, have been achieved on a device with emitter area of 4x 12.5 {micro}m{sup 2}. Both {line_integral}{sub T} and {line_integral}{sub Max} degrades with higher bias, which is related to the elongation of the collector depletion width

Engineering high-performance vertical cavity lasers

The cw and high-speed performance of vertical cavity surface emitting laser diodes (VCSELs) are affected by both electrical and optical issues arising from the geometry and fabrication of these devices. Structures with low resistance semiconductor mirrors and Al-oxide confinement layers address these issues and have produced record performance including 50% power conversion efficiency and modulation bandwidths up to 20 GHz at small bias currents

Development, characterization, and applications of high temperature superconductor nanobridge Josephson junctions

A well-controlled, high-yield Josephson junction process in high temperature superconductors (HTS) is necessary for the demonstration of ultra-high-speed devices and circuits which exceed the capabilities of conventional electronics. The authors developed nanobridge Josephson junctions in high quality thin-film YBaCuO with dimensions below 100 nm fabricated using electron-beam nanolithography. They characterized this Josephson junction technology for process yield, junction parameter uniformity, and overall applicability for use in high-performance circuits. To facilitate the determination of junction parameters, they developed a measurement technique based on spectral analysis in the range of 90--160 GHz of phase-locked, oscillating arrays of up to 2,450 Josephson junctions. Because of the excellent yield and uniformity of the nanobridge junctions, they successfully applied the junction technology to a wide variety of circuits. These circuits included transmission-line pulse formers and 32 and 64-bit shift registers. The 32-bit shift register was shown to operate at clock speeds near 100 GHz and is believed to be one of the faster and more complex digital circuit demonstrated to date using high temperature superconductor technology

Radiative Decays of the Upsilon(1S) to a Pair of Charged Hadrons

Using data obtained with the CLEO~III detector, running at the Cornell Electron Storage Ring (CESR), we report on a new study of exclusive radiative Upsilon(1S) decays into the final states gamma pi^+ pi^-, gamma K^+ K^-, and gamma p pbar.. We present branching ratio measurements for the decay modes Upsilon(1S) to gamma f_2(1270), Upsilon(1S) to gamma f_2'(1525), and Upsilon(1S) to gamma K^+K^-; helicity production ratios for f_2(1270) and f_2'(1525); upper limits for the decay Upsilon(1S) to gamma f_J(2200), with f_J(2220) to pi^+ pi^-, K^+ K^-, p pbar; and an upper limit for the decay Upsilon(1S) to gamma X(1860), with X(1860) to gamma p pbar.Comment: 17 pages postscript,also available through http://www.lns.cornell.edu/public/CLNS/2005/, Submitted to PR

Development of GaAs-Based Monolithic Surface Acoustic Wave Devices for Chemical Sensing and RF Filter Applications

Since their invention in the mid-1960's, surface acoustic wave (SAW) devices have become popular for a wide variety of applications. SAW devices represent a low-cost and compact method of achieving a variety of electronic signal processing functions at high frequencies, such as RF filters for TV or mobile wireless communications [1]. SAW devices also provide a convenient platform in chemical sensing applications, achieving extremely high sensitivity to vapor phase analytes in part-per-billion concentrations [2]. Although the SAW acoustic mode can be created on virtually any crystalline substrate, the development of SAW technology has historically focused on the use of piezoelectric materials, such as various orientations of either quartz or lithium niobate, allowing the devices to be fabricated simply and inexpensively. However, the III-V compound semiconductors, and GaAs in particular, are also piezoelectric as a result of their partially covalent bonding and support the SAW acoustic mode, allowing for the convenient fabrication of SAW devices. In addition, GaAs microelectronics has, in the past decade, matured commercially in numerous RF wireless technologies. In fact, GaAs was recognized long ago as a potential candidate for the monolithic integration of SAW devices with microelectronics, to achieve compact RF signal processing functions [3]. The details of design and fabrication of SAW devices can be found in a variety of references [1]