124 research outputs found
Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in InGaAs
We have investigated InGaAs layers grown by molecular-beam epitaxy on
GaAs(001) by transmission electron microscopy (TEM) and photoluminescence
spectroscopy. InGaAs layers with In-concentrations of 16, 25 and 28 % and
respective thicknesses of 20, 22 and 23 monolayers were deposited at 535 C. The
parameters were chosen to grow layers slightly above and below the transition
between the two- and three-dimensional growth mode. In-concentration profiles
were obtained from high-resolution TEM images by composition evaluation by
lattice fringe analysis. The measured profiles can be well described applying
the segregation model of Muraki et al. [Appl. Phys. Lett. 61 (1992) 557].
Calculated photoluminescence peak positions on the basis of the measured
concentration profiles are in good agreement with the experimental ones.
Evaluating experimental In-concentration profiles it is found that the
transition from the two-dimensional to the three-dimensional growth mode occurs
if the indium content in the In-floating layer exceeds 1.1+/-0.2 monolayers.
The measured exponential decrease of the In-concentration within the cap layer
on top of the islands reveals that the In-floating layer is not consumed during
island formation. The segregation efficiency above the islands is increased
compared to the quantum wells which is explained tentatively by
strain-dependent lattice-site selection of In. In addition, In0.25Ga0.75As
quantum wells were grown at different temperatures between 500 oC and 550 oC.
The evaluation of concentration profiles shows that the segregation efficiency
increases from R=0.65 to R=0.83.Comment: 16 pages, 6 figures, 1 table, sbmitted in Phys. Rev.
High-average-power (>20-W) Nd:YVO-4 lasers mode locked by strain-compensated saturable Bragg reflectors
Strain-compensated double InGaAs quantum-well saturable Bragg reflectors (SBR’s) with high damage thresholds have been developed for use as mode-locking elements in high-average-power neodymium lasers. Nd:YVO4 lasers have been developed with these new SBR’s, which produce transform-limited pulses of 21-ps duration at 90 MHz and an average power of 20 W in a diffraction-limited output beam. The peak pulse power at an output power of 20 W was 10.6 kW. A comparison of the operating parameters of strained single and strain-compensated double-well SBR’s indicates that the damage threshold increased by a factor of at least 2–3. Long cavity laser variants were nvestigated to assess the limitations of further power scaling. At a repetition frequency of 36-MHz stable mode-locked pulses with peak pulse powers of 24.4 kW and pulse energies of 0.6 mJ could be generated
Assessment of crystal quality and unit cell orientation in epitaxial Cu2ZnSnSe4 layers using polarized Raman scattering
We use polarization-resolved Raman spectroscopy to assess the crystal quality of epitaxial kesterite layers. It is demonstrated for the example of epitaxial Cu2ZnSnSe4 layers on GaAs(001) that ”standing” and ”lying” kesterite unit cell orientations (c’-axis parallel / perpendicular to the growth direction) can be distinguished by the application of Raman tensor analysis. From the appearance of characteristic intensity oscillations when the sample is rotated one can distinguish polycrystalline and epitaxial layers. The method can be transferred to kesterite layers oriented in any crystal direction and can shed light on the growth of such layers in general
X-Ray Phase-Contrast Tomography of Renal Ischemia-Reperfusion Damage
Purpose: The aim of the study was to investigate microstructural changes occurring in unilateral renal ischemia-reperfusion injury in a murine animal model using synchrotron radiation. Material and Methods: The effects of renal ischemia-reperfusion were investigated in a murine animal model of unilateral ischemia. Kidney samples were harvested on day 18. Grating-Based Phase-Contrast Imaging (GB-PCI) of the paraffin-embedded kidney samples was performed at a Synchrotron Radiation Facility (beam energy of 19 keV). To obtain phase information, a two-grating Talbot interferometer was used applying the phase stepping technique. The imaging system provided an effective pixel size of 7.5 mu m. The resulting attenuation and differential phase projections were tomographically reconstructed using filtered back-projection. Semi-automated segmentation and volumetry and correlation to histopathology were performed. Results: GB-PCI provided good discrimination of the cortex, outer and inner medulla in non-ischemic control kidneys. Post-ischemic kidneys showed a reduced compartmental differentiation, particularly of the outer stripe of the outer medulla, which could not be differentiated from the inner stripe. Compared to the contralateral kidney, after ischemia a volume loss was detected, while the inner medulla mainly retained its volume (ratio 0.94). Post-ischemic kidneys exhibited severe tissue damage as evidenced by tubular atrophy and dilatation, moderate inflammatory infiltration, loss of brush borders and tubular protein cylinders. Conclusion: In conclusion GB-PCI with synchrotron radiation allows for non-destructive microstructural assessment of parenchymal kidney disease and vessel architecture. If translation to lab-based approaches generates sufficient density resolution, and with a time-optimized image analysis protocol, GB-PCI may ultimately serve as a non-invasive, non-enhanced alternative for imaging of pathological changes of the kidney
Cardiovascular imaging 2010 in the International Journal of Cardiovascular Imaging
Cardiovascular Aspects of Radiolog
Luminescence spectra and kinetics of disordered solid solutions
We have studied both theoretically and experimentally the luminescence spectra and kinetics of crystalline, disordered solid solutions after pulsed excitation. First, we present the model calculations of the steady-state luminescence band shape caused by recombination of excitons localized in the wells of random potential induced by disorder. Classification of optically active tail states of the main exciton band into two groups is proposed. The majority of the states responsible for the optical absorption corresponds to the group of extended states belonging to the percolation cluster, whereas only a relatively small group of “radiative” states forms the steady-state luminescence band. The continuum percolation theory is applied to distinguish the “radiative” localized states, which are isolated in space and have no ways for nonradiative transitions along the tail states. It is found that the analysis of the exciton-phonon interaction gives the information about the character of the localization of excitons. We have shown that the model used describes quite well the experimental cw spectra of CdS(1−c)Sec and ZnSe(1−c)Tec solid solutions. Further, the experimental results are presented for the temporal evolution of the luminescence band. It is shown that the changes of band shape with time come from the interplay of population dynamics of extended states and spatially isolated “radiative” states. Finally, the measurements of the decay of the spectrally integrated luminescence intensity at long delay times are presented. It is shown that the observed temporal behavior can be described in terms of relaxation of separated pairs followed by subsequent exciton formation and radiative recombination. Electron tunneling processes are supposed to be responsible for the luminescence in the long-time limit at excitation below the exciton mobility edge. At excitation by photons with higher energies the diffusion of electrons can account for the observed behavior of the luminescence
Optically-pumped lasing at 1.3um of GaInNAs-based VCSEL structures
We investigate optically pumped lasing of GaInNAs-based VCSELs emitting at 1.3 mum. The samples measured were full device structures including doping. Conventional p-i-n-type VCSELs showed high internal threshold excitation densities of around 10 MW/cm(2). Improvements, especially the introduction of a tunnel junction reduced the threshold to about 128 kW/cm(2) and should after further optimization enable us to realize an electrically pumped 1.3 mum VCSEL in the near future
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