Influence of the charge carrier tunneling processes on the recombination dynamics in single lateral quantum dot molecules

We report on the charge carrier dynamics in single lateral quantum dot molecules and the effect of an applied electric field on the molecular states. Controllable electron tunneling manifests itself in a deviation from the typical excitonic decay behavior which is strongly influenced by the tuning electric field and inter-molecular Coulomb energies. A rate equation model is developed to gain more insight into the charge transfer and tunneling mechanisms. Non-resonant (phonon-mediated) electron tunneling which changes the molecular exciton character from direct to indirect, and vice versa, is found to be the dominant tunable decay mechanism of excitons besides radiative recombination.Comment: 4 pages, 4 figure

Polarization fine-structure and enhanced single-photon emission of self-assembled lateral InGaAs quantum dot molecules embedded in a planar micro-cavity

Single lateral InGaAs quantum dot molecules have been embedded in a planar micro-cavity in order to increase the luminescence extraction efficiency. Using a combination of metal-organic vapor phase and molecular beam epitaxy samples could be produced that exhibit a 30 times enhanced single-photon emission rate. We also show that the single-photon emission is fully switchable between two different molecular excitonic recombination energies by applying a lateral electric field. Furthermore, the presence of a polarization fine-structure splitting of the molecular neutral excitonic states is reported which leads to two polarization-split classically correlated biexciton exciton cascades. The fine-structure splitting is found to be on the order of 10 micro-eV.Comment: 14 pages, 4 figures; the following article has been submitted to Journal of Applied Physics (29th ICPS - invited paper); after it is published, it will be found at http://jap.aip.org

Towards deterministically controlled InGaAs/GaAs lateral quantum dot molecules

We report on the fabrication, detailed characterization and modeling of lateral InGaAs quantum dot molecules (QDMs) embedded in a GaAs matrix and we discuss strategies to fully control their spatial configuration and electronic properties. The three-dimensional morphology of encapsulated QDMs was revealed by selective wet chemical etching of the GaAs top capping layer and subsequent imaging by atomic force microscopy (AFM). The AFM investigation showed that different overgrowth procedures have a profound consequence on the QDM height and shape. QDMs partially capped and annealed in situ for micro- photoluminescence spectroscopy consist of shallow but well-defined quantum dots (QDs) in contrast to misleading results usually provided by surface morphology measurements when they are buried by a thin GaAs layer. This uncapping approach is crucial for determining the QDM structural parameters, which are required for modeling the system. A single-band effective-mass approximation is employed to calculate the confined electron and heavy-hole energy levels, taking the geometry and structural information extracted from the uncapping experiments as inputs. The calculated transition energy of the single QDM shows good agreement with the experimentally observed values. By decreasing the edge-to-edge distance between the two QDs within a QDM, a splitting of the electron (hole) wavefunction into symmetric and antisymmetric states is observed, indicating the presence of lateral coupling. Site control of such lateral QDMs obtained by growth on a pre-patterned substrate, combined with a technology to fabricate gate structures at well-defined positions with respect to the QDMs, could lead to deterministically controlled devices based on QDMs. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft

Skin, paper, tiles: a cross-cultural history of Kadiwéu art

This article focuses on the global traffic in images relating to Kadiwéu culture in South America, analyzing the extent to which they are entangled in the group’s continuing sense of presence. It begins with Kadiwéu designs as they appeared in the sketchbook of the artist-explorer Guido Boggiani in the late nineteenth century. It then explores the mapping of Kadiwéu territory and the practices and protocols informing a politics of land rights, cultural property and economic survival, looking in particular at the commissioning of Kadiwéu designs for a housing estate and an associated exhibition in Berlin early in the twentieth-first century. By developing a cross-cultural history of Kadiwéu art that considers the transnational networks across different times and spaces, including the case of a transcultural history of copyright, the article seeks to contribute to the ongoing re-thinking of the colonial archive and its afterlife

Inter-dot coupling and excitation transfer mechanisms of telecommunication band InAs quantum dots at elevated temperatures

We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot number is done by the processing of suitable nanometer-sized mesas. Using ensembles of only a few dots inside such mesas, their temperature stability, inter-dot charge transfer, as well as carrier capture and escape mechanisms out of the dots are investigated systematically. This includes the discussion of the dot ensemble and individual dots. Among the single-dot properties, we investigate the transition of emission lines from zero-phonon line to acoustic phonon sideband-dominated line shape with temperature. Moreover, the presence of single recombination lines up to temperatures of about 150K is demonstrated

Fabrication of Metal Embedded Nano-Cones for Single Quantum Dot Emission

High efficiency in the extraction, transmission and detection of single and entangled photons is one of the most significant factors to provide general usage and to suppress the bit-error rate in optical communication networks. We propose and realize metal embedded nanostructures with quantum dots (QDs) as photon sources to meet these challenges on the emitter side. Advantages of the process are the ability of fast nanometer-scale fabrication and the high reproducibility and yield. Mesas with typical taper angles of 20–30° and diameters between 100 nm and 1 µm were produced; these nanostructures are referred to as “cones” in this work. The dependence of the taper angle on the composition of the etched cone material is discussed, focusing on the contribution of indium. The nano-cones used as photon sources were embedded in highly reflective metal and turned upside down to provide efficient and partly directed photon extraction. We present the selection of 1.35 µm photons emitted from a single QD as a result of embedding only a small number of dots in a nanometer sized cone

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

InAs quantum dots (QDs) grown on InP substrates can be used as light emitters in the telecommunication bands. In this paper, we present optical characterization of high-density circular quantum dots (QDots) grown on InP(311)B substrates and elongated dots (QDashes) grown on InP(001) substrates. We study the charge carrier transfer and luminescence thermal quenching mechanisms of the QDots and QDashes by investigating the temperature dependence of their time-integrated and time-resolved photoluminescence properties. This results in two different contributions of the thermal activation energies. The larger activation energies are attributed to the carrier escape to the barrier layer and the wetting layer (WL) from QDots and QDashes, respectively. The smaller activation energies are found to be originated from inter-dot/dash carrier transfer via coupled excited states. The variation of the average oscillator strength associated with the carrier re-distribution is discussed. The relation of the two activation energies is also quantitatively studied with the measurements of excited-state and ground-state energy separations. Finally, we show an approach to isolate individual quantum dots or dashes in a suitable nanostructure

Long-chain omega-3 fatty acids improve brain function and structure in older adults

Higher intake of seafish or oil rich in long-chain omega-3 polyunsaturated fatty acids (LC-n3-FA) may be beneficial for the aging brain. We tested in a prospective interventional design whether high levels of supplementary LC-n3-FA would improve cognition, and addressed potential mechanisms underlying the effects. Sixty-five healthy subjects (50–75 years, 30 females) successfully completed 26 weeks of either fish oil (2.2 g/day LC-n3-FA) or placebo intake. Before and after the intervention period, cognitive performance, structural neuroimaging, vascular markers, and blood parameters were assayed. We found a significant increase in executive functions after LC-n3-FA compared with placebo (P = 0.023). In parallel, LC-n3-FA exerted beneficial effects on white matter microstructural integrity and gray matter volume in frontal, temporal, parietal, and limbic areas primarily of the left hemisphere, and on carotid intima media thickness and diastolic blood pressure. Improvements in executive functions correlated positively with changes in omega-3-index and peripheral brain-derived neurotrophic factor, and negatively with changes in peripheral fasting insulin. This double-blind randomized interventional study provides first-time evidence that LC-n3-FA exert positive effects on brain functions in healthy older adults, and elucidates underlying mechanisms. Our findings suggest novel strategies to maintain cognitive functions into old age