Chemical Vapor Deposition of N‑Doped Graphene and Carbon Films: The Role of Precursors and Gas Phase

Thermally induced chemical vapor deposition (CVD) was used to study the formation of nitrogen-doped graphene and carbon films on copper from aliphatic nitrogen-containing precursors consisting of C₁- and C₂-units and (hetero)aromatic nitrogen-containing ring systems. The structure and quality of the resulting films were correlated to the influence of the functional groups of the precursor molecules and gas phase composition. They were analyzed with SEM, TEM, EDX, XPS, and Raman spectroscopy. The presence of (N-doped) graphene was confirmed by the 2D mode of the Raman spectra. The isolated graphene films obtained from nitrogen-containing precursors reveal a high conductivity and transparency compared to standard graphene CVD samples. Precursors with amine functional groups (<i>e.g.</i>, methylamine) can lead to a direct formation of graphene even without additional hydrogen present in the gas phase. This is not observed for, <i>e.g.</i>, methane under comparable CVD conditions. Therefore, the intermediate gas phase species (<i>e.g.</i>, amine radicals) can significantly enhance the graphene film growth kinetics. Kinetic and thermodynamic effects can be invoked to discuss the decay of the precursors

Magnetoresistance and Charge Transport in Graphene Governed by Nitrogen Dopants

We identify the influence of nitrogen-doping on charge- and magnetotransport of single layer graphene by comparing doped and undoped samples. Both sample types are grown by chemical vapor deposition (CVD) and transferred in an identical process onto Si/SiO₂ wafers. We characterize the samples by Raman spectroscopy as well as by variable temperature magnetotransport measurements. Over the entire temperature range, the charge transport properties of all undoped samples are in line with literature values. The nitrogen doping instead leads to a 6-fold increase in the charge carrier concentration up to 4 × 10¹³ cm^–2 at room temperature, indicating highly effective doping. Additionally it results in the opening of a charge transport gap as revealed by the temperature dependence of the resistance. The magnetotransport exhibits a conspicuous sign change from positive Lorentz magnetoresistance (MR) in undoped to large negative MR that we can attribute to the doping induced disorder. At low magnetic fields, we use quantum transport signals to quantify the transport properties. Analyses based on weak localization models allow us to determine an orders of magnitude decrease in the phase coherence and scattering times for doped samples, since the dopants act as effective scattering centers

Chemical Vapor Deposition of High Quality Graphene Films from Carbon Dioxide Atmospheres

The realization of graphene-based, next-generation electronic applications essentially depends on a reproducible, large-scale production of graphene films <i>via</i> chemical vapor deposition (CVD). We demonstrate how key challenges such as uniformity and homogeneity of the copper metal substrate as well as the growth chemistry can be improved by the use of carbon dioxide and carbon dioxide enriched gas atmospheres. Our approach enables graphene film production protocols free of elemental hydrogen and provides graphene layers of superior quality compared to samples produced by conventional hydrogen/methane based CVD processes. The substrates and resulting graphene films were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and Raman microscopy, sheet resistance and transport measurements. The superior quality of the as-grown graphene films on copper is indicated by Raman maps revealing average G band widths as low as 18 ± 8 cm^–1 at 514.5 nm excitation. In addition, high charge carrier mobilities of up to 1975 cm²/(V s) were observed for electrons in transferred films obtained from a carbon dioxide based growth protocol. The enhanced graphene film quality can be explained by the mild oxidation properties of carbon dioxide, which at high temperatures enables an uniform conditioning of the substrates by an efficient removal of pre-existing and emerging carbon impurities and a continuous suppression and <i>in situ</i> etching of carbon of lesser quality being co-deposited during the CVD growth

Dehalogenation and Coupling of a Polycyclic Hydrocarbon on an Atomically Thin Insulator

Catalytic activity is of pivotal relevance in enabling efficient and selective synthesis processes. Recently, covalent coupling reactions catalyzed by solid metal surfaces opened the rapidly evolving field of on-surface chemical synthesis. Tailored molecular precursors in conjunction with the catalytic activity of the metal substrate allow the synthesis of novel, technologically highly relevant materials such as atomically precise graphene nanoribbons. However, the reaction path on the metal substrate remains unclear in most cases, and the intriguing question is how a specific atomic configuration between reactant and catalyst controls the reaction processes. In this study, we cover the metal substrate with a monolayer of hexagonal boron nitride (h-BN), reducing the reactivity of the metal, and gain unique access to atomistic details during the activation of a poly­phenylene precursor by sequential dehalogenation and the subsequent coupling to extended oligomers. We use scanning tunneling microscopy and density functional theory to reveal a reaction site anisotropy, induced by the registry mismatch between the precursor and the nanostructured h-BN monolayer

Boron Nitride on Cu(111): An Electronically Corrugated Monolayer

Ultrathin films of boron nitride (BN) have recently attracted considerable interest given their successful incorporation in graphene nanodevices and their use as spacer layers to electronically decouple and order functional adsorbates. Here, we introduce a BN monolayer grown by chemical vapor deposition of borazine on a single crystal Cu support, representing a model system for an electronically patterned but topographically smooth substrate. Scanning tunneling microscopy and spectroscopy experiments evidence a weak bonding of the single BN sheet to Cu, preserving the insulating character of bulk hexagonal boron nitride, combined with a periodic lateral variation of the local work function and the surface potential. Complementary density functional theory calculations reveal a varying registry of the BN relative to the Cu lattice as origin of this electronic Moiré-like superstructure

Control of Molecular Organization and Energy Level Alignment by an Electronically Nanopatterned Boron Nitride Template

Suitable templates to steer the formation of nanostructure arrays on surfaces are indispensable in nanoscience. Recently, atomically thin sp²-bonded layers such as graphene or boron nitride (BN) grown on metal supports have attracted considerable interest due to their potential geometric corrugation guiding the positioning of atoms, metallic clusters or molecules. Here, we demonstrate three specific functions of a geometrically smooth, but electronically corrugated, sp²/metal interface, namely, BN/Cu(111), qualifying it as a unique nanoscale template. As functional adsorbates we employed free-base porphine (2H–P), a prototype tetrapyrrole compound, and tetracyanoquinodimethane (TCNQ), a well-known electron acceptor. (i) The electronic moirons of the BN/Cu(111) interface trap both 2H–P and TCNQ, steering self-organized growth of arrays with extended molecular assemblies. (ii) We report an effective decoupling of the trapped molecules from the underlying metal support by the BN, which allows for a direct visualization of frontier orbitals by scanning tunneling microscopy (STM). (iii) The lateral molecular positioning in the superstructured surface determines the energetic level alignment; <i>i.e.</i>, the energy of the frontier orbitals, and the electronic gap are tunable