Size control of gas phase grown silicon nanocrystals by varying the plasma OFF time in silane pulsed plasma

Silicon nanoparticles are synthesized by very high frequency Plasma Enhanced Chemical Vapor Deposition (vhf-PECVD) in the gas phase. Pulsed plasmas are used to obtain particles with a narrow size distribution. The role of plasma OFF times is studied to tailor the size of the silicon nanoparticles. Various plasma OFF times are chosen, both longer- and shorter -than the residence time of the gases in the discharge. Time resolved optical emission spectroscopy (TROES) studies provide additional information about the growth precursor dynamics during plasma modulation. The size and the size distribution studies of the particles are done with transmission electron microscopy (TEM). These studies reveal that a plasma OFF time longer than the residence time is favorable for the formation of quantum sized silicon particles

Genetic Polymorphisms in PRM1, PRM2, and YBX2 Genes are Associated with Male Factor Infertility

PubMed ID: 29227750Aims: The etiology of infertility is still unknown in almost half of all male infertility patients. In sperm, DNA condensation differs from somatic and female gamete cells, with the protamine (PRM) gene and its transcription factor, Y-box binding protein 2 (YBX2), playing key roles in making the structure more compact. Protamine polymorphisms have been studied in different populations, but various results have been acquired. Materials and Methods: In our study, we examined, for the first time in a Turkish population, the association between protamine gene alleles (PRM1 c.-190C>A, PRM1 c.197G>T, and PRM2 c.248C>T), and YBX2 (c.187T>C and c.1095 + 16A>G) and male infertility. This was accomplished using polymerase chain reaction-restriction fragment length polymorphism analyses of 100 infertile and 100 fertile Turkish men. Sperm DNA fragmentation analysis was performed using the Comet technique. Results: We found that the AA and CA genotypes of the PRM1 c.-190C>A polymorphism had a significant association with infertility (p A polymorphism is associated with sperm DNA fragmentation, which may impact male infertility in the Turkish population. Further research with larger groups and in various other study populations will be required to clarify the impact of protamine and YBX2 gene polymorphisms on male infertility. © Copyright 2018, Mary Ann Liebert, Inc. 2018.Firat University Scientific Research Projects Management Unit: 10B3330028We thank Zeynep Bıyıklı Genc¸türk for statistical analysis assistance and biologist Sibel Arat for collecting the samples. This study was supported by a grant from Scientific Research Projects of Ankara University (project no. 10B3330028)

P-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by RF-PECVD

Silicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer. 20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells

Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays

This chapter looks at amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible display