VISCEL: A general-purpose computer program for analysis of linear viscoelastic structures (user's manual), volume 1

This program, an extension of the linear equilibrium problem solver ELAS, is an updated and extended version of its earlier form (written in FORTRAN 2 for the IBM 7094 computer). A synchronized material property concept utilizing incremental time steps and the finite element matrix displacement approach has been adopted for the current analysis. A special option enables employment of constant time steps in the logarithmic scale, thereby reducing computational efforts resulting from accumulative material memory effects. A wide variety of structures with elastic or viscoelastic material properties can be analyzed by VISCEL. The program is written in FORTRAN 5 language for the Univac 1108 computer operating under the EXEC 8 system. Dynamic storage allocation is automatically effected by the program, and the user may request up to 195K core memory in a 260K Univac 1108/EXEC 8 machine. The physical program VISCEL, consisting of about 7200 instructions, has four distinct links (segments), and the compiled program occupies a maximum of about 11700 words decimal of core storage

Thermoelectric effect in high mobility single layer epitaxial graphene

The thermoelectric response of high mobility single layer epitaxial graphene on silicon carbide substrates as a function of temperature and magnetic field have been investigated. For the temperature dependence of the thermopower, a strong deviation from the Mott relation has been observed even when the carrier density is high, which reflects the importance of the screening effect. In the quantum Hall regime, the amplitude of the thermopower peaks is lower than a quantum value predicted by theories, despite the high mobility of the sample. A systematic reduction of the amplitude with decreasing temperature suggests that the suppression of the thermopower is intrinsic to Dirac electrons in graphene.Comment: 5 pages, 4 figure

Teleoperator/robot technology can help solve biomedical problems

Teleoperator and robot technology appears to offer the possibility to apply these techniques to the benefit for the severely handicapped giving them greater self reliance and independence. Major problem areas in the development of prostheses and remotely controlled devices for the handicapped are briefly discussed, and the parallelism with problems in the development of teleoperator/robots identified. A brief description of specific ongoing and projected developments in the area of remotely controlled devices (wheelchairs and manipulators) is provided

Early appearance of 2, 3-butanediol in acute myocardial infarction. A new marker for ischaemia?

In 28 patients with acute myocardial infarction, the release pattern of 2, 3-butanediol (BD), a product of intermediary metabolism, and creatine kinase activity (CK) in blood were compared. Whereas CKat entry was low in all patients, the BD level was elevated in 18 (64%). However, BD returned to normal levels during the next 24 h whereas CK increased. The BD level at entry did not allow differentiation between patients with transmural or non-transmural infarction; it was independent of clinical findings and biochemical parameters. We suggest that, in patients with acute myocardial infarction, elevated levels of BD originates from myo-cardial metabolism. Whether it reflects ongoing ischaemia or reperfusion of the infarcted area remains unresolve

Cervical Ectopic Pregnancy

[West J Emerg Med. 2012;13(1):125–126.

Wafer bonding solution to epitaxial graphene - silicon integration

The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer and subsequent graphene nano-patterning that degrades considerably the electronic mobility of nanopatterned graphene. Epitaxial graphene (EG) by contrast is grown on an essentially perfect crystalline (semi-insulating) surface, and graphene nanostructures with exceptional properties have been realized by a selective growth process on tailored SiC surface that requires no graphene patterning. However, the temperatures required in this structured growth process are too high for silicon technology. Here we demonstrate a new graphene to Si integration strategy, with a bonded and interconnected compact double-wafer structure. Using silicon-on-insulator technology (SOI) a thin monocrystalline silicon layer ready for CMOS processing is applied on top of epitaxial graphene on SiC. The parallel Si and graphene platforms are interconnected by metal vias. This method inspired by the industrial development of 3d hyper-integration stacking thin-film electronic devices preserves the advantages of epitaxial graphene and enables the full spectrum of CMOS processing.Comment: 15 pages, 7 figure

Half integer quantum Hall effect in high mobility single layer epitaxial graphene

The quantum Hall effect, with a Berry's phase of $\pi$ is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is $\sim$ 20,000 cm$^2$/V$\cdot$s at 4 K and ~15,000 cm$^2$/V$\cdot$s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO$_2$ and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphene-based electronics.Comment: Some modifications in the text and figures, 7 pages, 2 figure

Magneto-transmission of multi-layer epitaxial graphene and bulk graphite: A comparison

Magneto-transmission of a thin layer of bulk graphite is compared with spectra taken on multilayer epitaxial graphene prepared by thermal decomposition of a SiC crystal. We focus on the spectral features evolving as \sqrt{B}, which are evidence for the presence of Dirac fermions in both materials. Whereas the results on multi-layer epitaxial graphene can be interpreted within the model of 2D Dirac fermions, the data obtained on bulk graphite can only be explained taking into account the 3D nature of graphite, e.g. by using the standard Slonczewski-Weiss-McClure model.Comment: 5 pages, 2 figure

Renal transplant anastomotic time–Every minute counts!

The impact of anastomotic time in renal transplant is under recognized and not well studied. It is one of the few controllable factors that affect the incidence of delayed graft function (DGF). Our study aimed at quantifying the impact of anastomotic time. We performed a retrospective review of 424 renal transplants between the years 2006 and 2020. A total of 247 deceased donor renal transplants formed the study cohort. Patients were divided into two groups based on the presence or absence of DGF. Variables with p < 0.3 were analyzed using the binary logistic regression test. The final analysis showed anastomotic time to be significantly associated with DGF with odds ratio of 1.04 per minute corresponding to 4% increase in DGF incidence with every minute increment in anastomotic time. Other variables that had significant impact on DGF were DCD donor (odds ratio – 8.7) and donor terminal creatinine. We concluded that anastomotic time had significant impact on the development of DGF and hence should be minimized