4 research outputs found
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Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing
Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were annealed in oxygen to adjust the carrier concentration. The electron carrier concentration of Zn(O,S) can be reduced by several orders of magnitude from to by post-deposition annealing in oxygen at temperatures from 200 °C to 290 °C. In the case of Zn(O,S) with S/Zn = 0.37, despite the considerable change in the electron carrier concentration, the bandgap energy decreased by only ∼0.1 eV, and the crystallinity did not change much after annealing. The oxygen/zinc ratio increased by 0.05 after annealing, but the stoichiometry remained uniform throughout the film.Chemistry and Chemical BiologyEngineering and Applied Science
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Vapor deposition of copper(I) bromide films via a two-step conversion process
Thin films of Cu2S grown by pulsed-chemical vapor deposition of bis(N,N'-di-secbutylacetamidinato)dicopper(I) and hydrogen sulfide were converted to CuBr upon exposure to anhydrous hydrogen bromide. X-ray diffraction shows that the as-deposited films have a polycrystalline Cu2S structure. After exposure to HBr gas, the surface of the films is transformed to a γ-CuBr polycrystalline structure. Scanning electron microscopy and X-ray photoelectron spectroscopy reveal complete conversion of up to 100 nm of film. However, when the conversion to CuBr approaches the interface between as-deposited Cu2S and the SiO2 substrate, the morphology of the film changes from continuous and nanocrystalline to sparse and microcrystalline.Chemistry and Chemical Biolog
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Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells
Thin-film solar cells consisting of earth-abundant and non-toxic materials were made from pulsed chemical vapor deposition (pulsed-CVD) of SnS as the p-type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n-type buffer layer. The effects of deposition temperature and annealing conditions of the SnS absorber layer were studied for solar cells with a structure of Mo/SnS/Zn(O,S)/ZnO/ITO. Solar cells were further optimized by varying the stoichiometry of Zn(O,S) and the annealing conditions of SnS. Post-deposition annealing in pure hydrogen sulfide improved crystallinity and increased the carrier mobility by one order of magnitude, and a power conversion efficiency up to 2.9% was achieved.Engineering and Applied Science
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Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties
Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 1019 to 1020 cm−3 with aluminum incorporation and sulfur content in the range of 0 ≤ S/(Zn+Al) ≤ 0.16. However, the carrier concentration decreased by five orders of magnitude from 1019 to 1014 cm−3 for S/(Zn+Al) = 0.34 and decreased even further when S/(Zn+Al) > 0.34. Such tunable electrical properties are potentially useful for graded buffer layers in thin-film photovoltaic applications.Chemistry and Chemical Biolog