21 research outputs found

    Suppression of the anti-symmetry channel in the conductance of telescoped double-wall nanotubes

    Full text link
    The conductance of telescoped double-wall nanotubes (TDWNTs) composed of two armchair nanotubes ((nO,nO)(n_O, n_O) and (nO5,nO5)(n_O-5, n_O-5) with nO10n_O \geq 10) is calculated using the Landauer formula and a tight binding model. The results are in good agreement with the conductance calculated analytical by replacing each single-wall nanotube with a ladder, as expressed by (2e2/h)(T++T)(2e^2/h)(T_+ + T_-), where T+T_+ and TT_- are the transmission rates of the symmetry and anti-symmetry channels, respectively. Perfect transmission in both channels is possible in this TDWNT when nO=10n_O=10, while TT_- is considerably small in the other TDWNTs. TT_- is particularly low when either nOn_O or nO5n_O-5 is a multiple of three. In this case, a three body effect of covalent-like interlayer bonds plays a crucial role in determining the finite TT_-. When nOn_O is a multiple of five, the five-fold symmetry increases TT_-, although this effect diminishes with increasing nOn_O.Comment: Owing to errors of the calculation code, the numerical data shown in Figures are incorrect. Nonetheless, the corrected numerical calculations do not change the essential results. See erratum, PHYSICAL REVIEW B 79, 199902 (2009). The responsibility for the errors lies completely with the first author (Ryo Tamura

    Superconductivity in Carbon Nanotubes

    Get PDF

    Edge-sensitive Semiconducting Behaviour in Low-defect Narrow Graphene Nanoribbons

    Get PDF
    Low-defect graphene nanoribbons (GNRs) derived from the unzipping of carbon nanotubes have exhibited large energy band gaps (transport gaps), despite having widths in the order of ∼100 nm. Here, we report on the unique semiconducting behaviour of very narrow, low-defect GNRs, with widths of less than 20 nm. Narrow GNRs are highly resistive, and additional annealing is required to reduce their resistivity. The GNRs display ambipolar rather than evident semiconducting behaviour (p- and n-types), exhibiting normalized Ion/Ioff as great as ∼106 (close to those in a few nm-order-width GNRs) and which are very sensitive to the atmosphere and the termination of the GNRs’ edges by foreign atoms (hydrogen for n-type and oxygen for p-type). It is also revealed that the activation energy (Ea ∼35 meV) estimated from the temperature dependence of the minimum conductance is smaller than those in ∼100 nm width GNRs. The observed sharp conductance peak on back-gate voltage (Vbg) dependence and its strong correlation with the Ea value suggest the presence of possible resonant tunnelling through shallow impurity levels with the small Ea introduced by the edge terminations by foreign atoms, which provides the observed unique behaviour, including the high Ion/Ioff. An energy band gap as large as ∼215 meV is also confirmed from the Ioff voltage region on Vbg. These narrow GNRs must open the door to large-scale graphene integration circuits based on CMOS-like behaviour

    Large edge magnetism in oxidized few-layer black phosphorus nanomeshes

    Get PDF
    The formation and control of a room-temperature magnetic order in two-dimensional (2D) materials is a challenging quest for the advent of innovative magnetic- and spintronic-based technologies. To date, edge magnetism in 2D materials has been experimentally observed in hydrogen (H)-terminated graphene nanoribbons (GNRs) and graphene nanomeshes (GNMs), but the measured magnetization remains far too small to allow envisioning practical applications. Herein, we report experimental evidences of large room-temperature edge ferromagnetism (FM) obtained from oxygen (O)-terminated zigzag pore edges of few-layer black phosphorus (P) nanomeshes (BPNMs). The magnetization values per unit area are ~100 times larger than those reported for H-terminated GNMs, while the magnetism is absent for H-terminated BPNMs. The magnetization measurements and the first-principles simulations suggest that the origin of such a magnetic order could stem from ferromagnetic spin coupling between edge P with O atoms, resulting in a strong spin localization at the edge valence band, and from uniform oxidation of full pore edges over a large area and interlayer spin interaction. Our findings pave the way for realizing high-efficiency 2D flexible magnetic and spintronic devices without the use of rare magnetic elements

    Graphene and Graphene Nanomesh Spintronics

    No full text
    Spintronics, which manipulate spins but not electron charge, are highly valued as energy and thermal dissipationless systems. A variety of materials are challenging the realization of spintronic devices. Among those, graphene, a carbon mono-atomic layer, is very promising for efficient spin manipulation and the creation of a full spectrum of beyond-CMOS spin-based nano-devices. In the present article, the recent advancements in graphene spintronics are reviewed, introducing the observation of spin coherence and the spin Hall effect. Some research has reported the strong spin coherence of graphene. Avoiding undesirable influences from the substrate are crucial. Magnetism and spintronics arising from graphene edges are reviewed based on my previous results. In spite of carbon-based material with only sp2 bonds, the zigzag-type atomic structure of graphene edges theoretically produces spontaneous spin polarization of electrons due to mutual Coulomb interaction of extremely high electron density of states (edge states) localizing at the flat energy band. We fabricate honeycomb-like arrays of low-defect hexagonal nanopores (graphene nanomeshes; GNMs) on graphenes, which produce a large amount of zigzag pore edges, by using a nonlithographic method (nanoporous alumina templates) and critical temperature annealing under high vacuum and hydrogen atmosphere. We observe large-magnitude ferromagnetism, which arises from polarized spins localizing at the hydrogen-terminated zigzag-nanopore edges of the GNMs, even at room temperature. Moreover, spin pumping effects are found for magnetic fields applied in parallel with the few-layer GNM planes. Strong spin coherence and spontaneously polarized edge spins of graphene can be expected to lead to novel spintronics with invisible, flexible, and ultra-light (wearable) features

    Carbon-based superconductors: towards high-Tc superconductivity

    No full text
    Introduction of Condensed Matter Physics; Spin-state Crossover; Li Ion Battery; Huge Thermoelectric Power; Room-temperature Ferromagnetism; Partially Disordered Antiferromagnetic Transition; Superconductivity; Transport Properties Combined with Charge, Spin, and Orbital; Magnetoresistance and Spin Blocade; Intrinsic Inhomogeneity; Move/diffuse and Charge/discharge Effect.</P
    corecore