59 research outputs found
Time-Resolved Intraband Relaxation of Strongly-Confined Electrons and Holes in Colloidal PbSe Nanocrystals
The relaxation of strongly-confined electrons and holes between 1P and 1S
levels in colloidal PbSe nanocrystals has been time-resolved using femtosecond
transient absorption spectroscopy. In contrast to II-VI and III-V semiconductor
nanocrystals, both electrons and holes are strongly confined in PbSe
nanocrystals. Despite the large electron and hole energy level spacings (at
least 12 times the optical phonon energy), we consistently observe picosecond
time-scale relaxation. Existing theories of carrier relaxation cannot account
for these experimental results. Mechanisms that could possibly circumvent the
phonon bottleneck in IV-VI quantum dots are discussed
Angular redistribution of near-infrared emission from quantum dots in 3D photonic crystals
We study the angle-resolved spontaneous emission of near-infrared light
sources in 3D photonic crystals over a wavelength range from 1200 to 1550 nm.
To this end PbSe quantum dots are used as light sources inside titania inverse
opal photonic crystals. Strong deviations from the Lambertian emission profile
are observed. An attenuation of 60 % is observed in the angle dependent radiant
flux emitted from the samples due to photonic stop bands. At angles that
correspond to the edges of the stop band the emitted flux is increased by up to
34 %. This increase is explained by the redistribution of Bragg-diffracted
light over the available escape angles. The results are quantitatively
explained by an expanded escape-function model. This model is based on
diffusion theory and adapted to photonic crystals using band structure
calculations. Our results are the first angular redistributions and escape
functions measured at near-infrared, including telecom, wavelengths. In
addition, this is the first time for this model to be applied to describe
emission from samples that are optically thick for the excitation light and
relatively thin for the photoluminesence light.Comment: 24 pages, 8 figures (current format = single column, double spaced
High-performance Bragg gratings in chalcogenide rib waveguides written with a modified Sagnac interferometer
This paper was published in Journal of the Optical Society of America B-Optical Physics and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/abstract.cfm?URI=josab-23-7-1323. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.Mehrdad Shokooh-Saremi, Vahid G. Ta'eed, Neil J. Baker, Ian C. M. Littler, David J. Moss, Benjamin J. Eggleton, Yinlan Ruan, and Barry Luther-Davie
Electron relaxation following UV excitation in CdSe nanocrystals: sub-picosecond-fast population of the 1PStates across a gap wider than 10 phonon energies
The typical energy separation between D-like and P-like electronic states in CdSe nanocrystals is
often of similar magnitude to the S-P splitting in the conduction band and would therefore similarly
preclude efficient electron decay via multiple phonon emission. Despite the puzzling observation of
fast D-to-P intraband relaxation, however, little is known about the mechanisms governing it. This
work shows that the same process responsible for fast P-to-S electron decay, namely Auger cooling,
plays a fundamental role to allow fast population of the P state, from higher excited states, in
case of high-energy excitations. Since in nanocrystals the latter are employed to initiate carrier
multiplication, where multiple excitons are created from the absorption of a single photon, the D
electron lifetimes calculated here could provide a reference for the estimate of the carrier multipli-
cation time constant, the magnitude of which is still object of intense debate. These results also
provide a further proof of the suitability of the Auger cooling model to explain electron relaxation
in semiconductor nanocrystals
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