1,429 research outputs found

    Ultranarrow conducting channels defined in GaAs-AlGaAs by low-energy ion damage

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    We have laterally patterned the narrowest conducting wires of two-dimensional electron gas (2DEG) material reported to date. The depletion induced by low-energy ion etching of GaAs-AlGaAs 2DEG structures was used to define narrow conducting channels. We employed high voltage electron beam lithography to create a range of channel geometries with widths as small as 75 nm. Using ion beam assisted etching by Cl2 gas and Ar ions with energies as low as 150 eV, conducting channels were defined by etching only through the thin GaAs cap layer. This slight etching is sufficient to entirely deplete the underlying material without necessitating exposure of the sidewalls that results in long lateral depletion lengths. At 4.2 K, without illumination, our narrowest wires retain a carrier density and mobility at least as high as that of the bulk 2DEG and exhibit quantized Hall effects. Aharonov–Bohm oscillations are seen in rings defined by this controlled etch-damage patterning. This patterning technique holds promise for creating one-dimensional conducting wires of even smaller sizes

    The extraordinary Hall effect in coherent epitaxial tau (Mn,Ni)Al thin films on GaAs

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    Ultrathin coherent epitaxial films of ferromagnetic tau(Mn,Ni)0.60Al0.40 have been grown by molecular beam epitaxy on GaAs substrates. X-ray scattering and cross-sectional transmission electron microscopy measurements confirm that the c axis of the tetragonal tau unit cell is aligned normal to the (001) GaAs substrate. Measurements of the extraordinary Hall effect (EHE) show that the films are perpendicularly magnetized, exhibiting EHE resistivities saturating in the range of 3.3-7.1 muOMEGA-cm at room temperature. These values of EHE resistivity correspond to signals as large as +7 and -7 mV for the two magnetic states of the film with a measurement current of 1 mA. Switching between the two magnetic states is found to occur at distinct field values that depend on the previously applied maximum field. These observations suggest that the films are magnetically uniform. As such, tau(Mn,Ni)Al films may be an excellent medium for high-density storage of binary information

    Module networks revisited: computational assessment and prioritization of model predictions

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    The solution of high-dimensional inference and prediction problems in computational biology is almost always a compromise between mathematical theory and practical constraints such as limited computational resources. As time progresses, computational power increases but well-established inference methods often remain locked in their initial suboptimal solution. We revisit the approach of Segal et al. (2003) to infer regulatory modules and their condition-specific regulators from gene expression data. In contrast to their direct optimization-based solution we use a more representative centroid-like solution extracted from an ensemble of possible statistical models to explain the data. The ensemble method automatically selects a subset of most informative genes and builds a quantitatively better model for them. Genes which cluster together in the majority of models produce functionally more coherent modules. Regulators which are consistently assigned to a module are more often supported by literature, but a single model always contains many regulator assignments not supported by the ensemble. Reliably detecting condition-specific or combinatorial regulation is particularly hard in a single optimum but can be achieved using ensemble averaging.Comment: 8 pages REVTeX, 6 figure

    Microfabrication of vertical-cavity surface-emitting laser cavities

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    We have reduced the threshold voltages and currents of vertical cavity surface emitting lasers by using dielectric high reflectivity mirrors which were deposited after the diode fabrication step. This device fabrication sequence is able to correct for inaccuracies in the crystal growth and allows the future development of more complex laser structures. The quantum-well based laser diodes were demonstrated at 0.72 µm, 0.85 µm, and 1.55 µm. Threshold currents and voltages of our 0.85 µm lasers were 2.8 mA at 1.7 V pulsed, and 4 mA when cw-pumped. The threshold currents of 5x7 µm^2 area 1.55 µm devices were 17 mA

    Status of the Five Year Highway Program

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    Programming Urban Improvements on the State Highway System

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    Planning Aspects of the Highway Program

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