2,092 research outputs found

    Controlled epitaxial graphene growth within amorphous carbon corrals

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    Structured growth of high quality graphene is necessary for technological development of carbon based electronics. Specifically, control of the bunching and placement of surface steps under epitaxial graphene on SiC is an important consideration for graphene device production. We demonstrate lithographically patterned evaporated amorphous carbon corrals as a method to pin SiC surface steps. Evaporated amorphous carbon is an ideal step-flow barrier on SiC due to its chemical compatibility with graphene growth and its structural stability at high temperatures, as well as its patternability. The amorphous carbon is deposited in vacuum on SiC prior to graphene growth. In the graphene furnace at temperatures above 1200∘^\circC, mobile SiC steps accumulate at these amorphous carbon barriers, forming an aligned step free region for graphene growth at temperatures above 1330∘^\circC. AFM imaging and Raman spectroscopy support the formation of quality step-free graphene sheets grown on SiC with the step morphology aligned to the carbon grid

    Wafer bonding solution to epitaxial graphene - silicon integration

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    The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer and subsequent graphene nano-patterning that degrades considerably the electronic mobility of nanopatterned graphene. Epitaxial graphene (EG) by contrast is grown on an essentially perfect crystalline (semi-insulating) surface, and graphene nanostructures with exceptional properties have been realized by a selective growth process on tailored SiC surface that requires no graphene patterning. However, the temperatures required in this structured growth process are too high for silicon technology. Here we demonstrate a new graphene to Si integration strategy, with a bonded and interconnected compact double-wafer structure. Using silicon-on-insulator technology (SOI) a thin monocrystalline silicon layer ready for CMOS processing is applied on top of epitaxial graphene on SiC. The parallel Si and graphene platforms are interconnected by metal vias. This method inspired by the industrial development of 3d hyper-integration stacking thin-film electronic devices preserves the advantages of epitaxial graphene and enables the full spectrum of CMOS processing.Comment: 15 pages, 7 figure

    Half integer quantum Hall effect in high mobility single layer epitaxial graphene

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    The quantum Hall effect, with a Berry's phase of π\pi is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is ∌\sim 20,000 cm2^2/V⋅\cdots at 4 K and ~15,000 cm2^2/V⋅\cdots at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO2_2 and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphene-based electronics.Comment: Some modifications in the text and figures, 7 pages, 2 figure

    Observation of Resistively Detected Hole Spin Resonance and Zero-Field Pseudo-Spin Splitting in Epitaxial Graphene

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    Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic material to complement–or replace–silicon. At the same time, the spin properties of graphene have suggested improved capability for spin-based electronics or spintronics and spin-based quantum computing. As a result, the detection, characterization and transport of spin have become topics of interest in graphene. Here we report a microwave photo-excited transport study of monolayer and trilayer graphene that reveals an unexpectedly strong microwave-induced electrical response and dual microwave-induced resonances in the dc resistance. The results suggest the resistive detection of spin resonance, and provide a measurement of the g-factor, the spin relaxation time and the sub-lattice degeneracy splitting at zero magnetic field

    External perceptions of successful university brands

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    Branding in universities has become an increasingly topical issue, with some institutions committing substantial financial resources to branding activities. The particular characteristics of the sector present challenges for those seeking to build brands and it therefore seems to be timely and appropriate to investigate the common approaches of those institutions perceived as having successful brands. This study is exploratory in nature, seeking to investigate how successfully UK universities brand themselves, whether they are distinct and if the sector overall communicates effectively. This is approached through examining the perspective of opinion formers external to universities but closely involved with the sector – a key stakeholder group in UK higher education Overall, the research’s exploratory nature aims to further the debate on effective branding in UK higher education. The findings and conclusions identify some issues surrounding university branding activity; most UK universities were considered to be distinct from one another, but few were seen to have real fully formed brands. Although a number of institutions that were seen as having more ‘successful’ brands were identified, it was argued that whilst many UK universities communicate their brand well enough to key stakeholders, they fail to consistently do this across all audiences. It was also suggested that UK universities may concentrate on areas of perceived immediate strategic importance (in terms of branding) to an extent where others are neglected

    Heritage branding orientation: The case of Ach. Brito and the dynamics between corporate and product heritage brands

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    The notion of heritage branding orientation is introduced and explicated. Heritage branding orientation is designated as embracing both product and corporate brands and differs from corporate heritage brand orientation which has an explicit corporate focus. Empirical insights are drawn from an in-depth and longitudinal case study of Ach. Brito, a celebrated Portuguese manufacturer of soaps and toiletries. This study shows how, by the pursuance of a strategy derived from a heritage branding orientation Ach. Brito – after a prolonged period of decline – achieved a dramatic strategic turnaround. The findings reveal how institutional heritage can be a strategic resource via its adoption and activation at both the product and corporate levels. Moreover, the study showed how the bi-lateral interplay between product and corporate brand levels can be mutually reinforcing. In instrumental terms, the study shows how heritage can be activated and articulated in different ways. For instance, it can re-position both product and/or corporate brands; it can be meaningfully informed by product brand heritage and shape corporate heritage; and can be of strategic importance to both medium-sized and small enterprises

    Structured epitaxial graphene: growth and properties

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    graphene ; nano-structure ; electronic transport ; ballistic transportInternational audienceGraphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently demonstrated viable graphene devices are essentially limited to micron size ultrahigh frequency analog field effect transistors and quantum Hall effect devices for metrology. Nanoscopically patterned graphene tends to have disordered edges which severely reduce mobilities thereby obviating its advantage over other materials. Here we show that graphene grown on structured silicon carbide surfaces overcomes the edge roughness and promises to provide an inroad into nanoscale patterning of graphene. We show that high quality ribbons and rings can be made using this technique. We also report on progress towards high mobility graphene monolayers on silicon carbide for device applications
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