Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications

Aiming for improvement of the ZrO2-based insulator properties as compared to the state-of-the-art ZrO2/Al2O3/ZrO2 stacks beyond 20 nm dynamic random access memory (DRAM) technology applications, ultra-thin (5 nm) ZrO2/SrO/ZrO2 stacks with TiN electrodes deposited by physical vapor deposition are addressed. By replacing the Al2O3 interlayer with SrO, the effective dielectric permittivity of the stack can be increased as indicated by electrical analysis. At the same time, no degradation of the insulating properties of the SrO-containing stacks and minor changes in the reliability, compared to an Al2O3 interlayer, are found. These results are indicating the possibility of further reducing the effective oxide thickness of the ZrO2-based stacks to come close to 0.5 nm for future DRAM capacitors.status: publishe

Cost-Effective Silicon Vertical Diode Switch for Next-Generation Memory Devices

In this letter, a cost-effective vertical diode scheme for next-generation memory devices, including phase-change memories (PCMs), is realized. After the contact formation for diodes with only one mask layer, an amorphous silicon (a-Si) film was deposited within the contacts using SiH4 ramp-up ambient in a conventional batch-type furnace in order to minimize the growth of native oxide. A deposition/etch-back/deposition scheme enabled us to achieve robust vertical diodes without any seams or interfacial oxide layer within the vertical diode pillars. Subsequent annealing at 600 degrees C provided solid-phase epitaxial alignment of the a-Si layer. An ideality factor revealed that the new scheme provided noticeable crystallinity of the silicon diodes. Moreover, the electrical characteristics of the diodes verified that the scheme was suitable for full operation of PCM devices

Enhanced reliability of phase-change memory via modulation of local structure and chemical bonding by incorporating carbon in Ge2Sb2Te5

In this study, we investigated the effect of phase-change characteristics on the device performance of carbon-incorporated Ge2Sb2Te5 (CGST) to understand the origin of the enhanced reliability and stabilization of the device. Macroscopic and microscopic measurements confirmed that the structural stability significantly increased with the incorporation of as much as 10% carbon. After the completion of bond formation between C and Ge, the excess C (>5 atomic%) engages in bonding with Sb in localized regions because of the difference in formation energy. These bonds of C with Ge and Sb induce non-uniform local charge density of the short-range order. Finally, because the strong bonds between Ge and C shorten the short Ge-Te bonds, the high thermal stability of CGST relative to that of GST can be attributed to intensified Peierls distortion. The formation of strong bonds successfully underpins the local structures and reduces the stochastic effect. Moreover, extension of the C bonding to Sb enhances the structural reliability, resulting in highly stable CGST in the amorphous phase. Finally, the device stability of CGST in the reset state of the amorphous structure during the device switching process was significantly improved

Low leakage ZrO2 based capacitors for sub 20 nm DRAM technology nodes

During DRAM capacitor scaling a lot of effort was spent searching for new material stacks to overcome the scaling limitations of the current material stack, such as leakage and sufficient capacitance. In this study, very promising results for a SrTiO3 based capacitor with a record low capacitance equivalent thickness value of 0.2 nm at target leakage current are presented. Due to the material properties of SrTiO3 films (high vacancy concentration and low band gap), which are leading to an increased leakage current, a physical thickness of at least 8 nm is required at target leakage specifications. However, this physical thickness would not fit into an 18 nm DRAM structure. Therefore, two different new approaches to develop a new ZrO2 based DRAM capacitor stack by changing the inter-layer material from Al2O3 to SrO, and the exchange of the top electrode material from TiN to Pt are presented. A combination of these two approaches leads to a capacitance equivalent thickness value of 0.47 nm. Most importantly, the physical thickness of < 5 nm for the dielectric stack is in accordance with the target specifications. Detailed evaluations of the leakage current characteristics lead to a capacitor model which allows the prediction of the electrical behavior with thickness scaling.status: publishe

Hyaluronic Acid-Conjugated with Hyperbranched Chlorin e6 Using Disulfide Linkage and Its Nanophotosensitizer for Enhanced Photodynamic Therapy of Cancer Cells

The main purpose of this study is to synthesize novel types of nanophotosensitizers that are based on hyperbranched chlorin e6 (Ce6) via disulfide linkages. Moreover, hyperbranched Ce6 was conjugated with hyaluronic acid (HA) for CD44-receptor mediated delivery and redox-sensitive photodynamic therapy (PDT) against cancer cells. Hyperbranched Ce6 was considered to make novel types of macromolecular photosensitizer since most of the previous studies regarding nanophotosensizers are concerned with simple conjugation between monomeric units of photosensitizer and polymer materials. Hyperbranched Ce6 was synthesized by conjugation of Ce6 each other while using disulfide linkage. To synthesize Ce6 tetramer, carboxyl groups of Ce6 were conjugated with cystamine and three equivalents of Ce6 were then conjugated again with the end of amine groups of Ce6-cystamine. To synthesize Ce6 decamer as a hyperbranched Ce6, six equivalents of Ce6 was conjugated with the end of Ce6 tetramer via cystamine linkage. Furthermore, HA-cystamine was attached with Ce6 tetramer or Ce6 decamer to synthesize HA-Ce6 tetramer (Ce6tetraHA) or HA-Ce6 decamer (Ce6decaHA) conjugates. Ce6tetraHA and Ce6decaHA nanophotosensitizers showed small diameters of less than 200 nm. The addition of dithiothreitol (DTT) and hyaluronidase (HAse) induced a faster Ce6 release rate in vitro drug release study, which indicated that Ce6tetraHA nanophotosensitizers possess redox-sensitive and HAse-sensitive release properties. Ce6tetraHA nanophotosensitizers showed higher intracellular Ce6 accumulation, higher ROS generation, and higher PDT efficacy than that of Ce6 alone. Ce6tetraHA nanophotosensitizers responded to the CD44 receptor of cancer cell surface, i.e., the pre-treatment of HA blocked CD44 receptor of U87MG or HCT116 cells and then inhibited delivery of nanophotosensitizers in vitro cell culture study. Furthermore, in vivo tumorxenograft study showed that fluorescence intensity in the tumor tissues was stronger than those of other organs, while CD44 receptor blocking by HA pretreatment induced a decrease of fluorescence intensity in tumor tissues when compared to liver. These results indicated that Ce6tetraHA nanophotosensitizers delivered to tumors by redox-sensitive and CD44-sensitive manner