Diffuse transport and spin accumulation in a Rashba two-dimensional electron gas

The Rashba Hamiltonian describes the splitting of the conduction band as a result of spin-orbit coupling in the presence of an asymmetric confinement potential and is commonly used to model the electronic structure of confined narrow-gap semiconductors. Due to the mixing of spin states some care has to be exercised in the calculation of transport properties. We derive the diffusive conductance tensor for a disordered two-dimensional electron gas with spin-orbit interaction and show that the applied bias induces a spin accumulation, but that the electric current is not spin-polarized.Comment: REVTeX4 format, 5 page

Ballistic spin-polarized transport and Rashba spin precession in semiconductor nanowires

We present numerical calculations of the ballistic spin-transport properties of quasi-one-dimensional wires in the presence of the spin-orbit (Rashba) interaction. A tight-binding analog of the Rashba Hamiltonian which models the Rashba effect is used. By varying the robustness of the Rashba coupling and the width of the wire, weak and strong coupling regimes are identified. Perfect electron spin-modulation is found for the former regime, regardless of the incident Fermi energy and mode number. In the latter however, the spin-conductance has a strong energy dependence due to a nontrivial subband intermixing induced by the strong Rashba coupling. This would imply a strong suppression of the spin-modulation at higher temperatures and source-drain voltages. The results may be of relevance for the implementation of quasi-one-dimensional spin transistor devices.Comment: 19 pages (incl. 9 figures). To be published in PR

Mesoscopic Stern-Gerlach device to polarize spin currents

Spin preparation and spin detection are fundamental problems in spintronics and in several solid state proposals for quantum information processing. Here we propose the mesoscopic equivalent of an optical polarizing beam splitter (PBS). This interferometric device uses non-dispersive phases (Aharonov-Bohm and Rashba) in order to separate spin up and spin down carriers into distinct outputs and thus it is analogous to a Stern-Gerlach apparatus. It can be used both as a spin preparation device and as a spin measuring device by converting spin into charge (orbital) degrees of freedom. An important feature of the proposed spin polarizer is that no ferromagnetic contacts are used.Comment: Updated to the published versio

Neutron scattering from a coordination polymer quantum paramagnet

Inelastic neutron scattering measurements are reported for a powder sample of the spin-1/2 quantum paramagnet $\rm Cu(Quinoxaline)Br_2$. Magnetic neutron scattering is identified above an energy gap of 1.9 meV. Analysis of the sharp spectral maximum at the onset indicates that the material is magnetically quasi-one-dimensional. Consideration of the wave vector dependence of the scattering and polymeric structure further identifies the material as a two-legged spin-1/2 ladder. Detailed comparison of the data to various models of magnetism in this material based on the single mode approximation and the continuous unitary transformation are presented. The latter theory provides an excellent account of the data with leg exchange $J_{\parallel}=2.0$ meV and rung exchange $J_{\perp}=3.3$ meV.Comment: 10 pages, 11 figures, 1 tabl

Optoelectric spin injection in semiconductor heterostructures without ferromagnet

We have shown that electron spin density can be generated by a dc current flowing across a $pn$ junction with an embedded asymmetric quantum well. Spin polarization is created in the quantum well by radiative electron-hole recombination when the conduction electron momentum distribution is shifted with respect to the momentum distribution of holes in the spin split valence subbands. Spin current appears when the spin polarization is injected from the quantum well into the $n$-doped region of the $pn$ junction. The accompanied emission of circularly polarized light from the quantum well can serve as a spin polarization detector.Comment: 2 figure

Coherent spin valve phenomena and electrical spin injection in ferromagnetic/semiconductor/ferromagnetic junctions

Coherent quantum transport in ferromagnetic/ semiconductor/ ferromagnetic junctions is studied theoretically within the Landauer framework of ballistic transport. We show that quantum coherence can have unexpected implications for spin injection and that some intuitive spintronic concepts which are founded in semi-classical physics no longer apply: A quantum spin-valve (QSV) effect occurs even in the absence of a net spin polarized current flowing through the device, unlike in the classical regime. The converse effect also arises, i.e. a zero spin-valve signal for a non-vanishing spin-current. We introduce new criteria useful for analyzing quantum and classical spin transport phenomena and the relationships between them. The effects on QSV behavior of spin-dependent electron transmission at the interfaces, interface Schottky barriers, Rashba spin-orbit coupling and temperature, are systematically investigated. While the signature of the QSV is found to be sensitive to temperature, interestingly, that of its converse is not. We argue that the QSV phenomenon can have important implications for the interpretation of spin-injection in quantum spintronic experiments with spin-valve geometries.Comment: 15 pages including 11 figures. To appear in PR

Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic effect, spin valve effect, and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p-n junction, so that there is no spin injection (or extraction) at low bias.Comment: Minor Revisions. To appear in Phys. Rev. Let

Quantum Transport in Nonuniform Magnetic Fields: Aharonov-Bohm Ring as a Spin Switch

We study the spin-dependent magneto conductance in mesoscopic rings subject to an inhomogeneous in-plane magnetic field. We show that the polarization direction of transmitted spin-polarized electrons can be controlled via an additional magnetic flux such that spin flips are induced at half a flux quantum. This quantum interference effect is independent of the strength of the nonuniform field applied. We give an analytical explanation for one-dimensional rings and numerical results for corresponding ballistic microstructures.Comment: 5 pages, 3 figures. To be published in Physical Review Letter

Neutron Scattering Study of Magnetic Ordering and Excitations in the Doped Spin Gap System Tl(Cu1−x_{1-x}Mgx_x)Cl3_3

Neutron elastic and inelastic scattering measurements have been performed in order to investigate the spin structure and the magnetic excitations in the impurity-induced antiferromagnetic ordered phase of the doped spin gap system Tl(Cu$_{1-x}$Mg$_x$)Cl$_3$ with $x=0.03$. The magnetic Bragg reflections indicative of the ordering were observed at ${\pmb Q}=(h, 0, l)$ with integer $h$ and odd $l$ below $T_{\rm N}=3.45$ K. It was found that the spin structure of the impurity-induced antiferromagnetic ordered phase on average in Tl(Cu$_{1-x}$Mg$_x$)Cl$_3$ with $x=0.03$ is the same as that of the field-induced magnetic ordered phase for ${\pmb H} \parallel b$ in the parent compound TlCuCl$_3$. The triplet magnetic excitation was clearly observed in the $a^*$-$c^*$ plane and the dispersion relations of the triplet excitation were determined along four different directions. The lowest triplet excitation corresponding to the spin gap was observed at ${\pmb Q}=(h, 0, l)$ with integer $h$ and odd $l$, as observed in TlCuCl$_3$. It was also found that the spin gap increases steeply below $T_{\rm N}$ upon decreasing temperature. This strongly indicates that the impurity-induced antiferromagnetic ordering coexists with the spin gap state in Tl(Cu$_{1-x}$Mg$_x$)Cl$_3$ with $x=0.03$.Comment: 24 pages, 7 figures, 11 eps files, revtex style, will appear in Phys. Rev.

Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures

Ballistic spin polarized transport through diluted magnetic semiconductor (DMS) single and double barrier structures is investigated theoretically using a two-component model. The tunneling magnetoresistance (TMR) of the system exhibits oscillating behavior when the magnetic field are varied. An interesting beat pattern in the TMR and spin polarization is found for different NMS/DMS double barrier structures which arises from an interplay between the spin-up and spin-down electron channels which are splitted by the s-d exchange interaction.Comment: 4 pages, 6 figures, submitted to Phys. Rev.