Optical characterization of semiconductor saturable absorbers

Semiconductor saturable absorber mirror (SESAM) devices have become a key component of ultrafast passive mode-locked laser sources. Here we describe in more detail how the key SESAM parameters such as saturation fluence, modulation depth, and nonsaturable losses are measured with a high accuracy. These parameters need to be known and controlled to obtain stable pulse generation for a given laser. A high-precision, wide dynamic range setup is required to measure this nonlinear reflectivity of saturable absorbers. The challenge to measure a low modulation depth and key measures necessary to obtain an accurate calibration are described in detail. The model function for the nonlinear reflectivity is based on a simple two-level travelling wave system. We include spatial beam profiles, nonsaturable losses and higher-order absorption, such as two-photon absorption and other induced absorption. Guidelines to extract the key parameters from the measured data are give

New regime of inverse saturable absorption for self-stabilizing passively mode-locked lasers

The reflectivity of a semiconductor saturable absorber mirror (SESAM) is generally expected to increase with increasing pulse energy. However, for higher pulse energies the reflectivity can decrease again; we call this a ‘roll-over' of the nonlinear reflectivity curve caused by inverse saturable absorption. We show for several SESAMs that the measured roll-over is consistent with two-photon absorption only for short (femtosecond) pulses, while a stronger (yet unidentified) kind of nonlinear absorption is dominant for longer (picosecond) pulses. These inverse saturable absorption effects have important technological consequences, e.g. for the Q-switching dynamics of passively mode-locked lasers. A simple equation using only measurable SESAM parameters and including inverse saturable absorption is derived for the Q-switched mode-locking threshold. We present various data and discuss the sometimes detrimental effects of this roll-over for femtosecond high repetition rate lasers, as well as the potentially very useful consequences for passively mode-locked multi-GHz lasers. We also discuss strategies to enhance or reduce this induced absorption by using different SESAM designs or semiconductor material

Semiconductor saturable absorber mirror structures with low saturation fluence

We present two novel semiconductor saturable absorber mirror (SESAM) designs which can exhibit more than ten times lower saturation fluence than classical SESAM devices. Design considerations and characterization data are presented. These devices are particularly suited for passively mode-locked lasers with ultra-high repetition rate

Observation of the spin-charge thermal isolation of ferromagnetic Ga_{0.94}Mn_{0.06}As by time-resolved magneto-optical measurement

The dynamics of magnetization under femtosecond optical excitation is studied in a ferromagnetic semiconductor Ga_{0.94}Mn_{0.06}As with a time-resolved magneto-optical Kerr effect measurement with two color probe beams. The transient reflectivity change indicates the rapid rise of the carrier temperature and relaxation to a quasi-thermal equilibrium within 1 ps, while a very slow rise of the spin temperature of the order of 500ps is observed. This anomalous behavior originates from the thermal isolation between the charge and spin systems due to the spin polarization of carriers (holes) contributing to ferromagnetism. This constitutes experimental proof of the half-metallic nature of ferromagnetic Ga_{0.94}Mn_{0.06}As arising from double exchange type mechanism originates from the d-band character of holes

Wideband-tuneable, nanotube mode-locked, fibre laser

Ultrashort-pulse lasers with spectral tuning capability have widespread applications in fields such as spectroscopy, biomedical research and telecommunications1–3. Mode-locked fibre lasers are convenient and powerful sources of ultrashort pulses4, and the inclusion of a broadband saturable absorber as a passive optical switch inside the laser cavity may offer tuneability over a range of wavelengths5. Semiconductor saturable absorber mirrors are widely used in fibre lasers4–6, but their operating range is typically limited to a few tens of nanometres7,8, and their fabrication can be challenging in the 1.3–1.5 mm wavelength region used for optical communications9,10. Single-walled carbon nanotubes are excellent saturable absorbers because of their subpicosecond recovery time, low saturation intensity, polarization insensitivity, and mechanical and environmental robustness11–16. Here, we engineer a nanotube–polycarbonate film with a wide bandwidth (>300 nm) around 1.55 mm, and then use it to demonstrate a 2.4 ps Er31-doped fibre laser that is tuneable from 1,518 to 1,558 nm. In principle, different diameters and chiralities of nanotubes could be combined to enable compact, mode-locked fibre lasers that are tuneable over a much broader range of wavelengths than other systems

Optical characterization of semiconductor saturable absorbers

ISSN:0946-2171ISSN:1432-0649ISSN:0721-7269ISSN:0340-379

MOVPE growth of long wavelength AlGaAsSb∕InP Bragg mirrors

International audienceMonolithic Distributed Bragg reflectors (DBRs) consisting of AlGaAsSb/InP quarterwave multilayer were grown by Metal-Organic Vapor-Phase Epitaxy (MOVPE) on InP substrates. The quality of antimonide MOVPE grown material has been optimized to achieve highly reflective, defect-free, DBR stacks. With 21 AlGaAsSb/InP periods, reflectivity up to 97% at 1.59µm was measured