7,801 research outputs found

    Transit-time devices as local oscillators for frequencies above 100 GHz

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    Very promising preliminary experimental results have been obtained from GaAs IMPATT diodes at F-band frequencies (75 mW, 3.5 percent at 111.1 GHz and 20 mW, 1.4 percent at 120.6 GHz) and from GaAs TUNNETT diodes at W-band frequencies (26 mW, 1.6 percent at 87.2 GHz and 32 mW, 2.6 percent at 93.5 GHz). These results indicate that IMPATT, MITATT and TUNNETT diodes have the highest potential of delivering significant amounts of power at Terahertz frequencies. As shown recently, the noise performance of GaAs W-band IMPATT diodes can compete with that of Gunn devices. Since TUNNETT diodes take advantage of the quieter tunnel injection, they are expected to be especially suited for low-noise local oscillators. This paper will focus on the two different design principles for IMPATT and TUNNETT diodes, the material parameters involved in the design and some aspects of the present device technology. Single-drift flat-profile GaAs D-band IMPATT diodes had oscillations up to 129 GHz with 9 mW, 0.9 percent at 128.4 GHz. Single-drift GaAs TUNNETT diodes had oscillations up to 112.5 GHz with 16 mW and output power levels up to 33 mW and efficiencies up to 3.4 percent around 102 GHz. These results are the best reported so far from GaAs IMPATT and TUNNETT diodes

    Microwave device investigations Semiannual progress report, 1 Oct. 1969 - 1 Apr. 1970

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    Beam-plasma interactions, cyclotron harmonic instability study, and millimeter and submillimeter wave detection by paramagnetic material

    Microwave device investigations Semiannual progress report, 1 Apr. - 1 Oct. 1968

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    Beam-plasma interactions, cyclotron harmonic instabilities, harmonic generation in beam-plasma system, relativistic electron beam studies, and materials test

    Microwave device investigations Semiannual progress report, 1 Apr. - 1 Oct. 1969

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    Summaries of progress in beam plasma interactions, paramagnetic and bulk semiconductor materials, and avalanche diode

    Microwave device investigations Semiannual progress report, 1 Oct. 1968 - 1 Apr. 1969

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    Beam plasma amplification, harmonic generation, and coupling scheme

    Frequency multiplication in high-energy electron beams Semiannual progress report, 1 Oct. 1967 - 31 Mar. 1968

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    Electron beam-plasma interactions, cyclotron harmonic instabilities, paramagnetic and semiconductor materials, and harmonic current generatio

    Induction Chemotherapy Followed by Concurrent Chemoradiation Therapy Versus Concurrent Chemoradiation Therapy Upfront in Locally Advanced Oral Cavity Cancer: Systematic Review and Meta-Analysis of Individual Data

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    Univ Sao Paulo, Hosp Siriolibanes, Dept Radiat Oncol, Sao Paulo, BrazilUniv Sao Paulo, Fac Med, Inst Canc Estado Sao Paulo, Sao Paulo, BrazilUniv Fed Sao Paulo, Escola Paulista Med UNIFESP EPM, Brazilian Cochrane Ctr, Sao Paulo, BrazilUniv Fed Sao Paulo, Escola Paulista Med UNIFESP EPM, Discipline Emergency Med & Evidence Based Med, Sao Paulo, BrazilHarvard Univ, Sch Med, Dana Farber Canc Inst, Dept Med Oncol, 44 Binney St, Boston, MA 02115 USABrigham & Womens Hosp, Dept Med, 75 Francis St, Boston, MA 02115 USAUniv Calif San Diego, La Jolla, CA 92093 USAHarvard Univ, Sch Med, Dana Farber Canc Inst, Head & Neck Oncol Program, 44 Binney St, Boston, MA 02115 USAAC Camargo Canc Ctr, Dept Head & Neck Surg & Otorhinolaryngol, Sao Paulo, BrazilUniv Fed Sao Paulo, Escola Paulista Med UNIFESP EPM, Brazilian Cochrane Ctr, Sao Paulo, BrazilUniv Fed Sao Paulo, Escola Paulista Med UNIFESP EPM, Discipline Emergency Med & Evidence Based Med, Sao Paulo, BrazilWeb of Scienc

    Microwave device investigations

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    Several tasks were active during this report period: (1) noise modulation in avalanche-diode devices; (2) schottky-barrier microwave devices; (3) intermodulation products in IMPATT diode amplifiers; (4) harmonic generation using Read-diode varactors; and (5) fabrication of GaAs Schottky-barrier IMPATT diodes

    Renormalization Group calculations with k|| dependent couplings in a ladder

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    We calculate the phase diagram of a ladder system, with a Hubbard interaction and an interchain coupling tt_\perp. We use a Renormalization Group method, in a one loop expansion, introducing an original method to include kk_{||} dependence of couplings. We also classify the order parameters corresponding to ladder instabilities. We obtain different results, depending on whether we include kk_{||} dependence or not. When we do so, we observe a region with large antiferromagnetic fluctuations, in the vicinity of small tt_\perp, followed by a superconducting region with a simultaneous divergence of the Spin Density Waves channel. We also investigate the effect of a non local backward interchain scattering : we observe, on one hand, the suppression of singlet superconductivity and of Spin Density Waves, and, on the other hand, the increase of Charge Density Waves and, for some values of tt_\perp, of triplet superconductivity. Our results eventually show that kk_{||} is an influential variable in the Renormalization Group flow, for this kind of systems.Comment: 20 pages, 19 figures, accepted in Phys. Rev. B 71 v. 2
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