4,679 research outputs found

    Creation and suppression of point defects through a kick-out substitution process of Fe in InP

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    Indium antisite defect In P-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects in SI InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation of point defects in Fe-diffused SI InP can be explained in terms of the complete occupation by Fe at indium vacancy. The In P defect is enhanced by the indium interstitial that is caused by the kick out of In and the substitution at the indium site of Fe in the diffusion process. Through these Fe-diffusion results, the nature of the defects in annealed undoped SI InP is better understood. © 2002 American Institute of Physics.published_or_final_versio

    Optical characteristics of GAN/SI micro-pixel light-emitting diode arrays

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    Two-dimensional arrays of emissive micro-light-emitting diodes (μ-LEDS) have been developed for a variety of applications such as high resolution micro-displays, maskless photo-lithography and multichannel visible-light optical communications amongst others. μ-LEDs have traditionally been fabricated on InGaN LED wafers grown on transparent sapphire substrates, and have suffered from optical crosstalk issues. When a single pixel is addressed, adjacent pixels and regions appear illuminated simultaneously. Such problems could result in functional failure in high-density μ-LED applications, including reduced resolution of micro-display and decreased signal-to-noise ratio in ...postprin

    Local tunneling characteristics near a grain boundary of a d-wave superconductor as probed by a normal-metal or a low-T-c-superconductor STM tip

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    Journals published by the American Physical Society can be found at http://journals.aps.org/We study the local single-particle tunneling characteristics [as observed with scanning tunnel microscopy (STM)] for N-D and S-D tunneling, where D is a d-wave superconductor with a {100}{110} grain boundary. The tunneling Hamiltonian method is used. The self-consistent order parameter is first determined using the quasiclassical Green's-function method, and then the tunneling characteristics at various distances from the interface, reflectivity of the interface, and temperature, are studied. For N-D tunneling, a zero-bias conductance peak (ZBCP) occurs near the interface, with diminishing magnitude away from it. For S-D tunneling, the ZBCP splits to exhibit the gap of the s-wave low-T-c superconducting tunneling tip, and there is a range of negative conductance just outside the peaks, when the tunneling point is near the grain boundary. The results are compared with those obtained by using a constant order parameter in each grain

    A Double-Voltage-Controlled Effective Thermal Conductivity Model of Graphene for Thermoelectric Cooling

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    © 1963-2012 IEEE. Graphene provides a new opportunity for thermoelectric study based on its unique heat transfer behavior controllable by a gate voltage. In this paper, an effective thermal conductivity model of graphene for thermoelectric cooling is proposed. The model is based on a double-voltage-control mechanism. According to the law of Fourier heat conduction, an effective thermal conductivity model of the proposed thermoelectric cooling device is derived taking a tunable external voltage into account. Then, a gate voltage is used which can change graphene's thermoelectric characteristics. To verify the correctness and effectiveness of the proposed model, a circuit simulation model using HSPICE is built based on the thermoelectric duality. The simulation results from HSPICE and the calculated results from the mathematic model show good agreements with each other. This paper provides a novel precisely controlling method for thermoelectric cooling

    High-energy scale revival and giant kink in the dispersion of a cuprate superconductor

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    In the present photoemission study of a cuprate superconductor Bi1.74Pb0.38Sr1.88CuO6+delta, we discovered a large scale dispersion of the lowest band, which unexpectedly follows the band structure calculation very well. The incoherent nature of the spectra suggests that the hopping-dominated dispersion occurs possibly with the assistance of local spin correlations. A giant kink in the dispersion is observed, and the complete self-energy containing all interaction information is extracted for a doped cuprate in the low energy region. These results recovered significant missing pieces in our current understanding of the electronic structure of cuprates.Comment: 4 pages, 3 figures, submitted to Phys. Rev. Lett. on May 21, 200

    On the Inability of Markov Models to Capture Criticality in Human Mobility

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    We examine the non-Markovian nature of human mobility by exposing the inability of Markov models to capture criticality in human mobility. In particular, the assumed Markovian nature of mobility was used to establish a theoretical upper bound on the predictability of human mobility (expressed as a minimum error probability limit), based on temporally correlated entropy. Since its inception, this bound has been widely used and empirically validated using Markov chains. We show that recurrent-neural architectures can achieve significantly higher predictability, surpassing this widely used upper bound. In order to explain this anomaly, we shed light on several underlying assumptions in previous research works that has resulted in this bias. By evaluating the mobility predictability on real-world datasets, we show that human mobility exhibits scale-invariant long-range correlations, bearing similarity to a power-law decay. This is in contrast to the initial assumption that human mobility follows an exponential decay. This assumption of exponential decay coupled with Lempel-Ziv compression in computing Fano's inequality has led to an inaccurate estimation of the predictability upper bound. We show that this approach inflates the entropy, consequently lowering the upper bound on human mobility predictability. We finally highlight that this approach tends to overlook long-range correlations in human mobility. This explains why recurrent-neural architectures that are designed to handle long-range structural correlations surpass the previously computed upper bound on mobility predictability

    Fenestrated azygos A2 segment: a rare anatomic variation

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    A 5d/3d duality from relativistic integrable system

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    We propose and prove a new exact duality between the F-terms of supersymmetric gauge theories in five and three dimensions with adjoint matter fields. The theories are compactified on a circle and are subject to the Omega deformation. In the limit proposed by Nekrasov and Shatashvili, the supersymmetric vacua become isolated and are identified with the eigenstates of a quantum integrable system. The effective twisted superpotentials are the Yang-Yang functional of the relativistic elliptic Calogero-Moser model. We show that they match on-shell by deriving the Bethe ansatz equation from the saddle point of the five-dimensional partition function. We also show that the Chern-Simons terms match and extend our proposal to the elliptic quiver generalizations.Comment: 30 pages, 4 figures. v2: typo corrected, references adde

    A compact model for magnetic tunnel junction (MTJ) switched by thermally assisted Spin transfer torque (TAS + STT)

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    Thermally assisted spin transfer torque [TAS + STT] is a new switching approach for magnetic tunnel junction [MTJ] nanopillars that represents the best trade-off between data reliability, power efficiency and density. In this paper, we present a compact model for MTJ switched by this approach, which integrates a number of physical models such as temperature evaluation and STT dynamic switching models. Many experimental parameters are included directly to improve the simulation accuracy. It is programmed in the Verilog-A language and compatible with the standard IC CAD tools, providing an easy parameter configuration interface and allowing high-speed co-simulation of hybrid MTJ/CMOS circuits
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