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Optical characteristics of GAN/SI micro-pixel light-emitting diode arrays

Abstract

Two-dimensional arrays of emissive micro-light-emitting diodes (μ-LEDS) have been developed for a variety of applications such as high resolution micro-displays, maskless photo-lithography and multichannel visible-light optical communications amongst others. μ-LEDs have traditionally been fabricated on InGaN LED wafers grown on transparent sapphire substrates, and have suffered from optical crosstalk issues. When a single pixel is addressed, adjacent pixels and regions appear illuminated simultaneously. Such problems could result in functional failure in high-density μ-LED applications, including reduced resolution of micro-display and decreased signal-to-noise ratio in ...postprin

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