Ultrahigh dielectric constant of thin films obtained by electrostatic force microscopy and artificial neural networks

Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.A detailed analysis of the electrostatic interaction between an electrostatic force microscope tip and a thin film is presented. By using artificial neural networks, an equivalent semiinfinite sample has been described as an excellent approximation to characterize the whole thin film sample. A useful analytical expression has been also developed. In the case of very small thin film thicknesses (around 1 nm), the electric response of the material differs even for very high dielectric constants. This effect can be very important for thin materials where the finite size effect can be described by an ultrahigh thin filmdielectric constant.This work was supported by TIN2010-196079. G.M.S. acknowledges support from the Spanish Ramón y Cajal Program

Approximated integrability of the Dicke model

A very approximate second integral of motion of the Dicke model is identified within a broad region above the ground state, and for a wide range of values of the external parameters. This second integral, obtained from a Born Oppenheimer approximation, classifies the whole regular part of the spectrum in bands labelled by its corresponding eigenvalues. Results obtained from this approximation are compared with exact numerical diagonalization for finite systems in the superradiant phase, obtaining a remarkable accord. The region of validity of our approach in the parameter space, which includes the resonant case, is unveiled. The energy range of validity goes from the ground state up to a certain upper energy where chaos sets in, and extends far beyond the range of applicability of a simple harmonic approximation around the minimal energy configuration. The upper energy validity limit increases for larger values of the coupling constant and the ratio between the level splitting and the frequency of the field. These results show that the Dicke model behaves like a two-degree of freedom integrable model for a wide range of energies and values of the external parameters.Comment: 6 pages, 3 figures. Second version with added text, references and some new figure

Enhanced stability of hydrogen atoms at the graphene/graphane interface of nanoribbons

The thermal stability of graphene/graphane nanoribbons (GGNRs) is investigated using density functional theory. It is found that the energy barriers for the diffusion of hydrogen atoms on the zigzag and armchair interfaces of GGNRs are 2.86 and 3.17 eV, respectively, while the diffusion barrier of an isolated H atom on pristine graphene was only ~0.3 eV. These results unambiguously demonstrate that the thermal stability of GGNRs can be enhanced significantly by increasing the hydrogen diffusion barriers through graphene/graphane interface engineering. This may provide new insights for viable applications of GGNRs.Comment: 13 pages, 1 figure, 2 tables to appear in Appl. Phys. Let

Broadening of H2_2O rotational lines by collision with He atoms at low temperature

We report pressure broadening coefficients for the 21 electric-dipole transitions between the eight lowest rotational levels of ortho-H$_2$O and para-H$_2$O molecules by collisions with He at temperatures from 20 to 120 K. These coefficients are derived from recently published experimental state-to-state rate coefficients for H$_2$O:He inelastic collisions, plus an elastic contribution from close coupling calculations. The resulting coefficients are compared to the available experimental data. Mostly due to the elastic contribution, the pressure broadening coefficients differ much from line to line, and increase markedly at low temperature. The present results are meant as a guide for future experiments and astrophysical observations.Comment: 2 figures, 2 table