Quantum mechanics: Myths and facts

A common understanding of quantum mechanics (QM) among students and practical users is often plagued by a number of "myths", that is, widely accepted claims on which there is not really a general consensus among experts in foundations of QM. These myths include wave-particle duality, time-energy uncertainty relation, fundamental randomness, the absence of measurement-independent reality, locality of QM, nonlocality of QM, the existence of well-defined relativistic QM, the claims that quantum field theory (QFT) solves the problems of relativistic QM or that QFT is a theory of particles, as well as myths on black-hole entropy. The fact is that the existence of various theoretical and interpretational ambiguities underlying these myths does not yet allow us to accept them as proven facts. I review the main arguments and counterarguments lying behind these myths and conclude that QM is still a not-yet-completely-understood theory open to further fundamental research.Comment: 51 pages, pedagogic review, revised, new references, to appear in Found. Phy

A Search for the Electric Dipole Moment of the Tau-Lepton

Using the ARGUS detector at the e+e- storage ring DORIS II, we have searched for the real and imaginary part of the electric dipole formfactor d_tau of the tau lepton in the production of tau pairs at q^2=100 GeV^2. This is the first direct measurement of this CP violating formfactor. We applied the method of optimised observables which takes into account all available information on the observed tau decay products. No evidence for CP violation was found, and we derive the following results: Re(d_tau)=(1.6+-.9)*10^(-16) ecm and Im(d_tau)=(-0.2+-0.8)*10^(-16) ecm, where statistical and systematic errors have been combined.Comment: 8 pages, 5 figures (10 subfigures

Amorphe Mischhalbleiter auf der Basis von Silizium fuer Tandemsolarzellen Zwischenbericht

SIGLETIB Hannover: FR2241+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman

Amorphe Mischhalbleiter auf der Basis von Silizium fuer Tandemsolarzellen Schlussbericht

SIGLETIB Hannover: FR 2241(Schl) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman

Duennschichtsolarzellen auf der Basis von amorphem Silizium Schlussbericht

The conversion efficiency, and predominantly the stability with respect to light-induced degradation of amorphous silicon (a-Si:H) based solar cells can considerably be improved by the use of a tandem or triple junction structure. The variation of the optical band-gap of a-Si:H can easily be accomplished by the additional incorporation of germanium or carbon into the amporphous network. However, the density of defect states of such alloys, both at mid-gap and in the band-tails, is strongly enhanced, and thus their optoelectronic properties correspondingly deteriorate with respect to pure a-Si:H. a-Si:H, a-Ge:H and amorphous alloy semiconductors (a-SiGe:H, a-SiC:H) with band-gaps of 1.1...2.1 eV were deposited by various methods, and optimized for the application in pin solar cells. Beyond these accomplishments, pin solar cells were fabricated on a laboratory scale, interface phenomena which substantially influence the device performance were investigated, a description of metastability on thermodynamic grounds was given, and a novel macroscopic grooving of the substrate was tested within first attempts to enhance the stabilized conversion efficiency of amorphous solar cellsDer Wirkungsgrad und vor allem die Stabilitaet gegenueber lichtinduzierter Degradation von Solarzellen auf der Basis amorphen Siliziums (a-Si:H) laesst sich mit Mehrbarrierensystemen, die Absorber mit abgestuften Bandabstaenden verwenden, erheblich verbessern. Die Variation des optischen Bandabstandes von a-Si:H gelingt sehr einfach durch zusAetzlich Einbau von Germanium oder Kohlenstoff, allerdings weisen solche Legierungen erhoehte Zustandsdichten in der Mitte der Quasibandluecke sowie den Bandauslaeufern auf und zeigen entsprechend schlechtere optoelektronische Eigenschaften als amorphes Silizium selbst. a-Si:H, a-Ge:H und amorphe Mischhalbleiter (a-SiGe:H, a-SiC:H) mit Bandabstaenden von (1,1-2,1) eV wurden mit verschiedenen Verfahren hergestellt und fuer die Anwendung in pin-Solarzellen optimiert. Darueber hinaus wurden pin-Solarzellen hergestellt, Grenzflaechenphaenomene untersucht, die deren Wirkungsgrad massgeblich beeinflussen, eine thermodynamisch begruendete Beschreibung der Metastabilitaet der untersuchten Halbleiter gegeben und eine neuartige makroskopische Strukturierung zur Erhhung der stabilisierten Wirkungsgrade amorpher Solarzellen erprobtSIGLEAvailable from TIB Hannover: F94B1214+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman

Duennschichtsolarzellen: Einsatz des CVD-Verfahrens zur Herstellung von a-Si:H-Solarzellen Schlussbericht

SIGLETIB Hannover: FR 2242+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman

Technologievorarbeiten fuer Energieversorgungssysteme. Bd. 1-3

Published in 3 separate volumesSIGLETIB: FR 4224(1,2,3)+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman