Rotorcraft linear simulation model. Volume 2: Computer implementation

A computer program used to process the equations is presented, and a full description of equation implementation is given. The model was implemented in the IBM 360 and CDC series computer systems

Electric field induced charge injection or exhaustion in organic thin film transistor

The conductivity of organic semiconductors is measured {\it in-situ} and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as a shift of the threshold thickness at which electric current began to flow. The {\it in-situ} and continuous measurement can also determine qualitatively the accumulation layer thickness together with the distribution function of injected carriers. The accumulation layer thickness is a few mono layers, and it does not depend on gate voltages, rather depends on the chemical species.Comment: 4 figures, to be published in Phys. Rev.

Polar surface engineering in ultra-thin MgO(111)/Ag(111) -- possibility of metal-insulator transition and magnetism

A recent report [Kiguchi {\it et al.}, Phys. Rev. B {\bf 68}, 115402 (2003)] that the (111) surface of 5 MgO layers grown epitaxially on Ag(111) becomes metallic to reduce the electric dipole moment raises a question of what will happen when we have fewer MgO layers. Here we have revealed, first experimentally with electron energy-loss spectroscopy, that MgO(111) remains metallic even when one-layer thick, and theoretically with the density functional theory that the metallization should depend on the nature of the substrate. We further show, with a spin-density functional calculation, that a ferromagnetic instability may be expected for thicker films.Comment: 5 pages, 7 figure

Signatures of the excitonic memory effects in four-wave mixing processes in cavity polaritons

We report the signatures of the exciton correlation effects with finite memory time in frequency domain degenerate four-wave mixing (DFWM) in semiconductor microcavity. By utilizing the polarization selection rules, we discriminate instantaneous, mean field interactions between excitons with the same spins, long-living correlation due to the formation of biexciton state by excitons with opposite spins, and short-memory correlation effects in the continuum of unbound two-exciton states. The DFWM spectra give us the relative contributions of these effects and the upper limit for the time of the exciton-exciton correlation in the unbound two-exciton continuum. The obtained results reveal the basis of the cavity polariton scattering model for the DFWM processes in high-Q GaAs microcavity.Comment: 11 pages, 1 figur

Assessment of Technologies for Reducing CO2 Emission

There are a wide variety of technologies for reducing CO2 emissions, of which a greater part are those of energy technologies. The paper aims at assessing these technologies with regional differences of technology characteristics taken into account. The first part examines merits and demerits of individual technology, and thus envisages its possible future. The second part describes a global energy model, which generates comprehensive long term future scenarios of energy and CO2 emission in various regions of the world