Nanoscale Defect Formation on InP(111) Surfaces after MeV Sb Implantation

We have studied the surface modifications as well as the surface roughness of the InP(111) surfaces after 1.5 MeV Sb ion implantations. Scanning Probe Microscope (SPM) has been utilized to investigate the ion implanted InP(111) surfaces. We observe the formation of nanoscale defect structures on the InP surface. The density, height and size of the nanostructures have been investigated here as a function of ion fluence. The rms surface roughness, of the ion implanted InP surfaces, demonstrates two varied behaviors as a function of Sb ion fluence. Initially, the roughness increases with increasing fluence. However, after a critical fluence the roughness decreases with increasing fluence. We have further applied the technique of Raman scattering to investigate the implantation induced modifications and disorder in InP. Raman Scattering results demonstrate that at the critical fluence, where the decrease in surface roughness occurs, InP lattice becomes amorphous.Comment: 18 pages, 9 figure

Singular Effects of Impurities near the Ferromagnetic Quantum-Critical Point

Systematic theoretical results for the effects of a dilute concentration of magnetic impurities on the thermodynamic and transport properties in the region around the quantum critical point of a ferromagnetic transition are obtained. In the quasi-classical regime, the dynamical spin fluctuations enhance the Kondo temperature. This energy scale decreases rapidly in the quantum fluctuation regime, where the properties are those of a line of critical points of the multichannel Kondo problem with the number of channels increasing as the critical point is approached, except at unattainably low temperatures where a single channel wins out.Comment: 4 pages, 2 figure

Universality in heavy-fermion systems with general degeneracy

We discuss the relation between the T^{2}-coefficient of electrical resistivity $A$ and the T-linear specific-heat coefficient $\gamma$ for heavy-fermion systems with general $N$, where $N$ is the degeneracy of quasi-particles. A set of experimental data reveals that the Kadowaki-Woods relation; $A/\gamma^{2} = 1*10^{-5} {\mu\Omega}(K mol/mJ)^{2}$, collapses remarkably for large-N systems, although this relation has been regarded to be commonly applicable to the Fermi-liquids. Instead, based on the Fermi-liquid theory we propose a new relation; $\tilde{A}/\tilde{\gamma}^2=1\times10^{-5}$ with $\tilde{A} = A/(1/2)N(N-1)$ and $\tilde{\gamma} = \gamma/(1/2)N(N-1)$. This new relation exhibits an excellent agreement with the data for whole the range of degenerate heavy-fermions.Comment: 2 figures, to appear in Phys. Rev. Let

Effect of Strain Relaxation on Magnetotransport properties of epitaxial La_0.7Ca_0.3MnO_3 films

In this paper, we have studied the effect of strain relaxation on magneto-transport properties of La_0.7Ca_0.3MnO_3 epitaxial films (200 nm thick), which were deposited by pulsed laser deposition technique under identical conditions. All the films are epitaxial and have cubic unit cell. The amount of strain relaxation has been varied by taking three different single crystal substrates of SrTiO_3, LaAlO_3 and MgO. It has been found that for thicker films the strain gets relaxed and produces variable amount of disorder depending on the strength of strain relaxation. The magnitude of lattice relaxation has been found to be 0.384, 3.057 and 6.411 percent for film deposited on SrTiO_3, LaAlO_3 and MgO respectively. The films on LaAlO_3 and SrTiO_3 show higher T_{IM} of 243 K and 217 K respectively as compared to T_{IM} of 191 K for the film on MgO. Similarly T_C of the films on SrTiO_3 and LaAlO_3 is sharper and has value of 245 K and 220 K respectively whereas the TC of the film on MgO is 175 K. Higher degree of relaxation creates more defects and hence TIM (T_C) of the film on MgO is significantly lower than of SrTiO_3 and LaAlO_3. We have adopted a different approach to correlate the effect of strain relaxation on magneto-transport properties of LCMO films by evaluating the resistivity variation through Mott's VRH model. The variable presence of disorder in these thick films due to lattice relaxation which have been analyzed through Mott's VRH model provides a strong additional evidence that the strength of lattice relaxation produces disorder dominantly by increase in density of defects such as stacking faults, dislocations, etc. which affect the magneto-transport properties of thick epitaxial La_0.7Ca_0.3MnO_3 films

High-bias stability of monatomic chains

For the metals Au, Pt and Ir it is possible to form freely suspended monatomic chains between bulk electrodes. The atomic chains sustain very large current densities, but finally fail at high bias. We investigate the breaking mechanism, that involves current-induced heating of the atomic wires and electromigration forces. We find good agreement of the observations for Au based on models due to Todorov and coworkers. The high-bias breaking of atomic chains for Pt can also be described by the models, although here the parameters have not been obtained independently. In the limit of long chains the breaking voltage decreases inversely proportional to the length.Comment: 7 pages, 5 figure

Signatures of valence fluctuations in CeCu2Si2 under high pressure

Simultaneous resistivity and a.c.-specific heat measurements have been performed under pressure on single crystalline CeCu2Si2 to over 6 GPa in a hydrostatic helium pressure medium. A series of anomalies were observed around the pressure coinciding with a maximum in the superconducting critical temperature, $T_c^{max}$. These anomalies can be linked with an abrupt change of the Ce valence, and suggest a second quantum critical point at a pressure $P_v \simeq 4.5$ GPa, where critical valence fluctuations provide the superconducting pairing mechanism, as opposed to spin fluctuations at ambient pressure. Such a valence instability, and associated superconductivity, is predicted by an extended Anderson lattice model with Coulomb repulsion between the conduction and f-electrons. We explain the T-linear resistivity found at $P_v$ in this picture, while other anomalies found around $P_v$ can be qualitatively understood using the same model.Comment: Submitted to Phys. Rev.

When grassroots innovation movements encounter mainstream institutions: implications for models of inclusive innovation

Grassroots innovation movements (GIMs) can be regarded as initiators or advocates of alternative pathways of innovation. Sometimes these movements engage with more established science, technology and innovation (STI) institutions and development agencies in pursuit of their goals. In this paper, we argue that an important aspect to encounters between GIMs and mainstream STI institutions is the negotiation of different framings of grassroots innovation and development of policy models for inclusive innovation. These encounters can result in two different modes of engagement by GIMs; what we call insertion and mobilization. We illustrate and discuss these interrelated notions of framings and modes of engagement by drawing on three case studies of GIMs: the Social Technologies Network in Brazil, and the Honey Bee Network and People's Science Movements in India. The cases highlight that inclusion in the context of GIMs is not an unproblematic, smooth endeavour, and involves diverse interpretations and framings, which shape what and who gets included or excluded. Within the context of increasing policy interest, the analysis of encounters between GIMs and STI institutions can offer important lessons for the design of models of inclusive innovation and development